High Responsivity and Wavelength Selectivity of GaN‐Based Resonant Cavity Photodiodes

Li, Jing; Yang, Chao; Liu, Lei; Cao, Haicheng; Lin, Shan; Xi, Xin; Li, Xiaodong; Ma, Zhanhong; Wang, Kaiyou; Patan�, Amalia; Zhao, Lixia

Abstract

The implementation of blue-light photodiodes based on InGaN in emerging technologies, such as free-space visible light communication (VLC), requires transformative approaches towards enhanced performance, miniaturization, and integration beyond current Si-based technologies. Here, we report on the design and realization of high-performance InGaN-based resonant cavity photodiodes with high-reflectivity lateral porous GaN distributed Bragg reflectors. The well-controlled porosification of GaN on the 2-inch wafers enables us to design and fabricate optical components, unlocking the potential of nitride semiconductors for several applications. These resonant-cavity-enhanced photodiodes, which have a 12 nm-thick optically active region, exhibit a high responsivity (~0.1 A W-1) to blue-light even without any externally applied voltage. Furthermore, the device can operate as both an emitter and a detector of visible 2 light at well-defined wavelengths with spectral overlap between the electroluminescence emission and photocurrent responsivity, meeting the requirement of wavelength selectivity, thermal stability and low-power consumption for VLC, with potential for integration of different functionalities, i.e. light emission and detection, on a single chip without additional light filters.

Citation

Li, J., Yang, C., Liu, L., Cao, H., Lin, S., Xi, X., Li, X., Ma, Z., Wang, K., Patanè, A., & Zhao, L. (2020). High Responsivity and Wavelength Selectivity of GaN‐Based Resonant Cavity Photodiodes. Advanced Optical Materials, 8(7), Article 1901276. https://doi.org/10.1002/adom.201901276

• Journal Article Type: Article
• Acceptance Date: Dec 27, 2019
• Online Publication Date: Feb 17, 2020
• Publication Date: Apr 3, 2020
• Deposit Date: Jan 8, 2020
• Publicly Available Date: Feb 18, 2021
• Journal: Advanced Optical Materials
• Electronic ISSN: 2195-1071
• Publisher: Wiley
• Peer Reviewed: Peer Reviewed
• Volume: 8
• Issue: 7
• Article Number: 1901276
• DOI: https://doi.org/10.1002/adom.201901276
• Keywords: lateral porous GaN distributed Bragg reflectors; resonant cavity; high responsivity; high wavelength selectivity; Indium Gallium Nitride
• Public URL: https://nottingham-repository.worktribe.com/output/3687895
• Publisher URL: https://onlinelibrary.wiley.com/doi/full/10.1002/adom.201901276
• Additional Information: Received: 2019-07-26; Published: 2020-02-17