Band-gap profiling by laser writing of hydrogen-containing III-N-Vs

Balakrishnan, N.; Pettinari, G.; Makarovsky, O.; Turyanska, L.; Fay, M. W.; De Luca, M.; Polimeni, A.; Capizzi, M.; Martelli, F.; Rubini, S.; Patan�, A.

Abstract

We show that the dissociation of the N-H complex in hydrogenated III-N-Vs can be laser activated at temperatures that are significantly smaller than those (>200°C) required for thermal dissociation due to a resonant photon absorption by the N-H complex. This phenomenon provides a mechanism for profiling the band-gap energy in the growth plane of the III-N-Vs with submicron spatial resolution and high energy accuracy; the profiles are erasable and the alloys can be rehydrogenated making any nanoscale in-plane band-gap profile rewritable. © 2012 American Physical Society.

Citation

Balakrishnan, N., Pettinari, G., Makarovsky, O., Turyanska, L., Fay, M. W., De Luca, M., Polimeni, A., Capizzi, M., Martelli, F., Rubini, S., & Patanè, A. (2012). Band-gap profiling by laser writing of hydrogen-containing III-N-Vs. Physical review B: Condensed matter and materials physics, 86(15), Article 155307. https://doi.org/10.1103/PhysRevB.86.155307

• Journal Article Type: Article
• Online Publication Date: Oct 10, 2012
• Publication Date: Oct 15, 2012
• Deposit Date: Feb 21, 2020
• Journal: Physical Review B - Condensed Matter and Materials Physics
• Print ISSN: 1098-0121
• Electronic ISSN: 1550-235X
• Publisher: American Physical Society
• Peer Reviewed: Peer Reviewed
• Volume: 86
• Issue: 15
• Article Number: 155307
• DOI: https://doi.org/10.1103/PhysRevB.86.155307
• Public URL: https://nottingham-repository.worktribe.com/output/3159521
• Publisher URL: https://journals.aps.org/prb/abstract/10.1103/PhysRevB.86.155307