Flexible Memristor Devices Using Hybrid Polymer/Electrodeposited GeSbTe Nanoscale Thin Films

Jaafar, Ayoub H.; Meng, Lingcong; Zhang, Tongjun; Guo, Dongkai; Newbrook, Daniel; Zhang, Wenjian; Reid, Gillian; de Groot, C. H.; Bartlett, Philip N.; Huang, Ruomeng

Abstract

We report on the development of hybrid organic-inorganic material-based flexible memristor devices made by a fast and simple electrochemical fabrication method. The devices consist of a bilayer of poly(methyl methacrylate) (PMMA) and Te-rich GeSbTe chalcogenide nanoscale thin films sandwiched between Ag top and TiN bottom electrodes on both Si and flexible polyimide substrates. These hybrid memristors require no electroforming process and exhibit reliable and reproducible bipolar resistive switching at low switching voltages under both flat and bending conditions. Multistate switching behavior can also be achieved by controlling the compliance current (CC). We attribute the switching between the high resistance state (HRS) and low resistance state (LRS) in the devices to the formation and rupture of conductive Ag filaments within the hybrid PMMA/GeSbTe matrix. This work provides a promising route to fabricate flexible memory devices through an electrodeposition process for application in flexible electronics.

Citation

Jaafar, A. H., Meng, L., Zhang, T., Guo, D., Newbrook, D., Zhang, W., Reid, G., de Groot, C. H., Bartlett, P. N., & Huang, R. (2022). Flexible Memristor Devices Using Hybrid Polymer/Electrodeposited GeSbTe Nanoscale Thin Films. ACS Applied Nano Materials, 5(12), 17711-17720. https://doi.org/10.1021/acsanm.2c03639

• Journal Article Type: Article
• Acceptance Date: Nov 2, 2022
• Online Publication Date: Nov 25, 2022
• Publication Date: Dec 23, 2022
• Deposit Date: Nov 28, 2022
• Publicly Available Date: Dec 19, 2022
• Journal: ACS Applied Nano Materials
• Print ISSN: 2574-0970
• Electronic ISSN: 2574-0970
• Publisher: American Chemical Society
• Peer Reviewed: Peer Reviewed
• Volume: 5
• Issue: 12
• Pages: 17711-17720
• DOI: https://doi.org/10.1021/acsanm.2c03639
• Public URL: https://nottingham-repository.worktribe.com/output/14040551
• Publisher URL: https://pubs.acs.org/doi/10.1021/acsanm.2c03639