Unique Coexistence of Two Resistive Switching Modes in a Memristor Device Enables Multifunctional Neuromorphic Computing Properties

Jaafar, Ayoub H.; Al Habsi, Salim Khalfan Suroor; Braben, Thomas; Venables, Craig; Francesconi, Maria Grazia; Stasiuk, Graeme J.; Kemp, Neil T.

Abstract

We report on hybrid memristor devices consisting of germanium dioxide nanoparticles (GeO2 NP) embedded within a poly(methyl methacrylate) (PMMA) thin film. Besides exhibiting forming-free resistive switching and an uncommon “ON” state in pristine conditions, the hybrid (nanocomposite) devices demonstrate a unique form of mixed-mode switching. The observed stopping voltage-dependent switching enables state-of-the-art bifunctional synaptic behavior with short-term (volatile/temporal) and long-term (nonvolatile/nontemporal) modes that are switchable depending on the stopping voltage applied. The short-term memory mode device is demonstrated to further emulate important synaptic functions such as short-term potentiation (STP), short-term depression (STD), paired-pulse facilitation (PPF), post-tetanic potentiation (PTP), spike-voltage-dependent plasticity (SVDP), spike-duration-dependent plasticity (SDDP), and, more importantly, the “learning–forgetting–rehearsal” behavior. The long-term memory mode gives additional long-term potentiation (LTP) and long-term depression (LTD) characteristics for long-term plasticity applications. The work shows a unique coexistence of the two resistive switching modes, providing greater flexibility in device design for future adaptive and reconfigurable neuromorphic computing systems at the hardware level.

Citation

Jaafar, A. H., Al Habsi, S. K. S., Braben, T., Venables, C., Francesconi, M. G., Stasiuk, G. J., & Kemp, N. T. (2024). Unique Coexistence of Two Resistive Switching Modes in a Memristor Device Enables Multifunctional Neuromorphic Computing Properties. ACS Applied Materials and Interfaces, 16(33), 43816-43826. https://doi.org/10.1021/acsami.4c07820

• Journal Article Type: Article
• Acceptance Date: Aug 4, 2024
• Online Publication Date: Aug 12, 2024
• Publication Date: Aug 12, 2024
• Deposit Date: Aug 15, 2024
• Publicly Available Date: Aug 16, 2024
• Journal: ACS Applied Materials & Interfaces
• Print ISSN: 1944-8244
• Electronic ISSN: 1944-8252
• Publisher: American Chemical Society
• Peer Reviewed: Peer Reviewed
• Volume: 16
• Issue: 33
• Pages: 43816-43826
• DOI: https://doi.org/10.1021/acsami.4c07820
• Keywords: memristor; volatile; nonvolatile; synapse; GeO2 nanoparticles; polymer
• Public URL: https://nottingham-repository.worktribe.com/output/38378647
• Publisher URL: https://pubs.acs.org/doi/10.1021/acsami.4c07820