EBIC study of Au / n-type GaN Schottky contacts

Moldovan, Grigore; Harrison, Ian; Brown, Paul D.

Abstract

The performance of Au / n-type GaN Schottky contacts is strongly dependent on the GaN surface processing prior to contacting. Current-voltage and EBIC line scans demonstrate that KOH treatment acts to degrade the Schottky contacts. EBIC imaging reveals the differing sub-grain boundary structures of MBE and MOCVD grown GaN / sapphire. The KOH treatment acts to uniformly change the properties of the GaN surface, rather than having a localised effect.

Citation

Moldovan, G., Harrison, I., & Brown, P. D. (2003). EBIC study of Au / n-type GaN Schottky contacts. In A. Cullis, & P. Midgley (Eds.), Microscopy of semiconducting materials 2003 : proceedings of the Institute of Physics conference, Cambridge University, 31 March - 3 April 2003. IOP Publishing Ltd

• Publication Date: Jan 1, 2003
• Deposit Date: May 19, 2011
• Publicly Available Date: May 19, 2011
• Peer Reviewed: Peer Reviewed
• Issue: 180
• Series Title: Institute of Physics conference series
• Book Title: Microscopy of semiconducting materials 2003 : proceedings of the Institute of Physics conference, Cambridge University, 31 March - 3 April 2003
• ISBN: 9780750309790
• Keywords: EBIC, Schottky contact, GaN
• Public URL: https://nottingham-repository.worktribe.com/output/1022440
• Related Public URLs: http://iopscience.iop.org/