Outputs (71)

Probing and manipulating the Mexican hat-shaped valence band of In2Se3 (2025)
Journal Article
Felton, J., Harknett, J., Page, J., Yang, Z., Alghofaili, N., O'Shea, J. N., Eaves, L., Kohama, Y., Greenaway, M. T., & Patanè, A. (2025). Probing and manipulating the Mexican hat-shaped valence band of In2Se3. Nature Communications, https://doi.org/10.1038/s41467-025-56139-8

Ferroelectrics based on van der Waals semiconductors represent an emergent class of materials for disruptive technologies ranging from neuromorphic computing to low-power electronics. However, many theoretical predictions of their electronic properti... Read More about Probing and manipulating the Mexican hat-shaped valence band of In2Se3.

Giant Elasto-Optic Response of Gallium Selenide on Flexible Mica (2025)
Journal Article
Barker, T., Gray, A., Weir, M., Sharp, J., Kenton, A., Kudrynskyi, Z., Rostami, H., & Patané, A. (2025). Giant Elasto-Optic Response of Gallium Selenide on Flexible Mica. npj Flexible Electronics, 9, Article 2. https://doi.org/10.1038/s41528-024-00375-3

Understanding the bending behaviour of a crystal onto a flexible platform is crucial for flexible electronics. The Young’s modulus, a measure of how easily a material deforms, plays a critical role in the coupled deformation of a crystal on a flexibl... Read More about Giant Elasto-Optic Response of Gallium Selenide on Flexible Mica.

High-temperature Brown-Zak oscillations in graphene/hBN moiré field effect transistor fabricated using molecular beam epitaxy (2024)
Journal Article
Makarovsky, O., Hill, R. J. A., Cheng, T. S., Summerfield, A., Taniguchi, T., Watanabe, K., Mellor, C. J., Patanè, A., Eaves, L., Novikov, S. V., & Beton, P. H. (2024). High-temperature Brown-Zak oscillations in graphene/hBN moiré field effect transistor fabricated using molecular beam epitaxy. Communications Materials, 5(1), Article 189. https://doi.org/10.1038/s43246-024-00633-x

Graphene placed on hexagonal boron nitride (hBN) has received significant interest due to its excellent electrical performance and physics phenomena, such as superlattice Dirac points. Direct molecular beam epitaxy growth of graphene on hBN offers an... Read More about High-temperature Brown-Zak oscillations in graphene/hBN moiré field effect transistor fabricated using molecular beam epitaxy.

Epitaxy of GaSe Coupled to Graphene: From In Situ Band Engineering to Photon Sensing (2024)
Journal Article
Bradford, J., Dewes, B. T., Shiffa, M., Cottam, N. D., Rahman, K., Cheng, T. S., Novikov, S. V., Makarovsky, O., O'Shea, J. N., Beton, P. H., Lara-Avila, S., Harknett, J., Greenaway, M. T., & Patanè, A. (2024). Epitaxy of GaSe Coupled to Graphene: From In Situ Band Engineering to Photon Sensing. Small, 20(40), Article 2404809. https://doi.org/10.1002/smll.202404809

2D semiconductors can drive advances in quantum science and technologies. However, they should be free of any contamination; also, the crystallographic ordering and coupling of adjacent layers and their electronic properties should be well‐controlled... Read More about Epitaxy of GaSe Coupled to Graphene: From In Situ Band Engineering to Photon Sensing.

Thin Ga2O3 Layers by Thermal Oxidation of van der Waals GaSe Nanostructures for Ultraviolet Photon Sensing (2024)
Journal Article
Cottam, N. D., Dewes, B. T., Shiffa, M., Cheng, T. S., Novikov, S. V., Mellor, C. J., Makarovsky, O., Gonzalez, D., Ben, T., & Patanè, A. (2024). Thin Ga2O3 Layers by Thermal Oxidation of van der Waals GaSe Nanostructures for Ultraviolet Photon Sensing. ACS Applied Nano Materials, 7(15), 17553-17560. https://doi.org/10.1021/acsanm.4c02685

Two-dimensional semiconductors (2DSEM) based on van der Waals crystals offer important avenues for nanotechnologies beyond the constraints of Moore's law and traditional semiconductors, such as silicon (Si). However, their application necessitates pr... Read More about Thin Ga2O3 Layers by Thermal Oxidation of van der Waals GaSe Nanostructures for Ultraviolet Photon Sensing.

Wafer-Scale Two-Dimensional Semiconductors for Deep UV Sensing (2023)
Journal Article
Shiffa, M., Dewes, B. T., Bradford, J., Cottam, N. D., Cheng, T. S., Mellor, C. J., Makarovskiy, O., Rahman, K., O'Shea, J. N., Beton, P. H., Novikov, S. V., Ben, T., Gonzalez, D., Xie, J., Zhang, L., & Patanè, A. (2024). Wafer-Scale Two-Dimensional Semiconductors for Deep UV Sensing. Small, 20(7), Article 2305865. https://doi.org/10.1002/smll.202305865

2D semiconductors (2SEM) can transform many sectors, from information and communication technology to healthcare. To date, top‐down approaches to their fabrication, such as exfoliation of bulk crystals by “scotch‐tape,” are widely used, but have limi... Read More about Wafer-Scale Two-Dimensional Semiconductors for Deep UV Sensing.

Thermally stable quantum Hall effect in a gated ferroelectric-graphene heterostructure (2023)
Journal Article
Dey, A., Cottam, N., Makarovskiy, O., Yan, W., Mišeikis, V., Coletti, C., Kerfoot, J., Korolkov, V., Eaves, L., Linnartz, J. F., Kool, A., Wiedmann, S., & Patanè, A. (2023). Thermally stable quantum Hall effect in a gated ferroelectric-graphene heterostructure. Communications Physics, 6, Article 216. https://doi.org/10.1038/s42005-023-01340-8

The quantum Hall effect is widely used for the investigation of fundamental phenomena, ranging from topological phases to composite fermions. In particular, the discovery of a room temperature resistance quantum in graphene is significant for compact... Read More about Thermally stable quantum Hall effect in a gated ferroelectric-graphene heterostructure.

Direct Measurements of Anisotropic Thermal Transport in γ-InSe Nanolayers via Cross-Sectional Scanning Thermal Microscopy (2023)
Journal Article
Gonzalez-Munoz, S., Agarwal, K., Castanon, E. G., Kudrynskyi, Z. R., Kovalyuk, Z. D., Spièce, J., Kazakova, O., Patanè, A., & Kolosov, O. V. (2023). Direct Measurements of Anisotropic Thermal Transport in γ-InSe Nanolayers via Cross-Sectional Scanning Thermal Microscopy. Advanced Materials Interfaces, 10(17), Article 2300081. https://doi.org/10.1002/admi.202300081

Van der Waals (vdW) atomically thin materials and their heterostructures offer a versatile platform for the management of nanoscale heat transport and the design of novel thermoelectrics. These require the measurement of highly anisotropic heat trans... Read More about Direct Measurements of Anisotropic Thermal Transport in γ-InSe Nanolayers via Cross-Sectional Scanning Thermal Microscopy.

Subnanometer-Wide Indium Selenide Nanoribbons (2023)
Journal Article
Cull, W. J., Skowron, S. T., Hayter, R., Stoppiello, C. T., Rance, G. A., Biskupek, J., Kudrynskyi, Z. R., Kovalyuk, Z. D., Allen, C. S., Slater, T. J. A., Kaiser, U., Patanè, A., & Khlobystov, A. N. (2023). Subnanometer-Wide Indium Selenide Nanoribbons. ACS Nano, 17(6), 6062-6072. https://doi.org/10.1021/acsnano.3c00670

Indium selenides (InxSey) have been shown to retain several desirable properties, such as ferroelectricity, tunable photoluminescence through temperature-controlled phase changes, and high electron mobility when confined to two dimensions (2D). In th... Read More about Subnanometer-Wide Indium Selenide Nanoribbons.

Graphene FETs with high and low mobilities have universal temperature-dependent properties (2023)
Journal Article
Gosling, J., Morozov, S. V., Vdovin, E. E., Greenaway, M. T., Khanin, Y. N., Kudrynskyi, Z., Patanè, A., Eaves, L., Turyanska, L., Fromhold, T. M., & Makarovsky, O. (2023). Graphene FETs with high and low mobilities have universal temperature-dependent properties. Nanotechnology, 34(12), Article 125702. https://doi.org/10.1088/1361-6528/aca981

We use phenomenological modelling and detailed experimental studies of charge carrier transport to investigate the dependence of the electrical resistivity,ρ, on gate voltage,Vg, for a series of monolayer graphene field effect transistors with mobili... Read More about Graphene FETs with high and low mobilities have universal temperature-dependent properties.