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Inkjet Printed Multifunctional Graphene Sensors for Flexible and Wearable Electronics (2024)
Journal Article
Wang, F., Heaton, C., Cottam, N., Austin, J., Im, J., Fromhold, T. M., Wildman, R. D., Hague, R. J. M., Tuck, C., Makarovsky, O., & Turyanska, L. (in press). Inkjet Printed Multifunctional Graphene Sensors for Flexible and Wearable Electronics. Advanced Electronic Materials, https://doi.org/10.1002/aelm.202400689

The exceptional electrical properties of graphene with high sensitivity to external stimuli make it an ideal candidate for advanced sensing technologies. Inkjet printing of graphene (iGr) can provide a versatile platform for multifunctional sensor ma... Read More about Inkjet Printed Multifunctional Graphene Sensors for Flexible and Wearable Electronics.

High-temperature Brown-Zak oscillations in graphene/hBN moiré field effect transistor fabricated using molecular beam epitaxy (2024)
Journal Article
Makarovsky, O., Hill, R. J. A., Cheng, T. S., Summerfield, A., Taniguchi, T., Watanabe, K., Mellor, C. J., Patanè, A., Eaves, L., Novikov, S. V., & Beton, P. H. (2024). High-temperature Brown-Zak oscillations in graphene/hBN moiré field effect transistor fabricated using molecular beam epitaxy. Communications Materials, 5(1), Article 189. https://doi.org/10.1038/s43246-024-00633-x

Graphene placed on hexagonal boron nitride (hBN) has received significant interest due to its excellent electrical performance and physics phenomena, such as superlattice Dirac points. Direct molecular beam epitaxy growth of graphene on hBN offers an... Read More about High-temperature Brown-Zak oscillations in graphene/hBN moiré field effect transistor fabricated using molecular beam epitaxy.

Epitaxy of GaSe Coupled to Graphene: From In Situ Band Engineering to Photon Sensing (2024)
Journal Article
Bradford, J., Dewes, B. T., Shiffa, M., Cottam, N. D., Rahman, K., Cheng, T. S., Novikov, S. V., Makarovsky, O., O'Shea, J. N., Beton, P. H., Lara-Avila, S., Harknett, J., Greenaway, M. T., & Patanè, A. (2024). Epitaxy of GaSe Coupled to Graphene: From In Situ Band Engineering to Photon Sensing. Small, 20(40), Article 2404809. https://doi.org/10.1002/smll.202404809

2D semiconductors can drive advances in quantum science and technologies. However, they should be free of any contamination; also, the crystallographic ordering and coupling of adjacent layers and their electronic properties should be well‐controlled... Read More about Epitaxy of GaSe Coupled to Graphene: From In Situ Band Engineering to Photon Sensing.

Thin Ga2O3 Layers by Thermal Oxidation of van der Waals GaSe Nanostructures for Ultraviolet Photon Sensing (2024)
Journal Article
Cottam, N. D., Dewes, B. T., Shiffa, M., Cheng, T. S., Novikov, S. V., Mellor, C. J., Makarovsky, O., Gonzalez, D., Ben, T., & Patanè, A. (2024). Thin Ga2O3 Layers by Thermal Oxidation of van der Waals GaSe Nanostructures for Ultraviolet Photon Sensing. ACS Applied Nano Materials, 7(15), 17553-17560. https://doi.org/10.1021/acsanm.4c02685

Two-dimensional semiconductors (2DSEM) based on van der Waals crystals offer important avenues for nanotechnologies beyond the constraints of Moore's law and traditional semiconductors, such as silicon (Si). However, their application necessitates pr... Read More about Thin Ga2O3 Layers by Thermal Oxidation of van der Waals GaSe Nanostructures for Ultraviolet Photon Sensing.

Room temperature compressed air-stable conductive copper films for flexible electronics (2024)
Journal Article
Pereira, H. J., Makarovsky, O., Amabilino, D. B., & Newton, G. N. (2024). Room temperature compressed air-stable conductive copper films for flexible electronics. npj Flexible Electronics, 8, Article 44. https://doi.org/10.1038/s41528-024-00331-1

The state-of-the-art technology of fabricating printed copper electronics is focussed largely on thermal sintering restricting transition towards heat sensitive flexible substrates. Herein we report a pioneering technology which eliminates the need f... Read More about Room temperature compressed air-stable conductive copper films for flexible electronics.

Developing colloidal nanoparticles for inkjet printing of devices with optical properties tuneable from the UV to the NIR (2024)
Journal Article
Austin, J. S., Xiao, W., Wang, F., Cottam, N. D., Rivers, G., Ward, E. B., Luan, W., Tuck, C. J., Hague, R., Makarovsky, O., Turyanska, L., & James, T. S. (2024). Developing colloidal nanoparticles for inkjet printing of devices with optical properties tuneable from the UV to the NIR. Journal of Materials Chemistry C, https://doi.org/10.1039/D4TC01917B

Colloidal low-dimensional photo-sensitive nanomaterials have attracted significant interest for optoelectronic device applications where inkjet printing offers a high accuracy and low waste route for their deposition on silicon-based, as well as flex... Read More about Developing colloidal nanoparticles for inkjet printing of devices with optical properties tuneable from the UV to the NIR.

Quantum Nature of Charge Transport in Inkjet-Printed Graphene Revealed in High Magnetic Fields up to 60T (2024)
Journal Article
Cottam, N. D., Wang, F., Austin, J. S., Tuck, C. J., Hague, R., Fromhold, M., Escoffier, W., Goiran, M., Pierre, M., Makarovsky, O., & Turyanska, L. (2024). Quantum Nature of Charge Transport in Inkjet-Printed Graphene Revealed in High Magnetic Fields up to 60T. Small, 20(30), Article 2311416. https://doi.org/10.1002/smll.202311416

Inkjet‐printing of graphene, iGr, provides an alternative route for the fabrication of highly conductive and flexible graphene films for use in devices. However, the contribution of quantum phenomena associated with 2D single layer graphene, SLG, to... Read More about Quantum Nature of Charge Transport in Inkjet-Printed Graphene Revealed in High Magnetic Fields up to 60T.

Bi2Se3 interlayer treatments affecting the Y3Fe5O12 (YIG) platinum spin Seebeck effect (2023)
Journal Article
Hu, Y., Weir, M. P., Pereira, H. J., Amin, O. J., Pitcairn, J., Cliffe, M. J., Rushforth, A. W., Kunakova, G., Niherysh, K., Korolkov, V., Kertfoot, J., Makarovsky, O., & Woodward, S. (2023). Bi2Se3 interlayer treatments affecting the Y3Fe5O12 (YIG) platinum spin Seebeck effect. Applied Physics Letters, 123(22), Article 223902. https://doi.org/10.1063/5.0157778

In this work, we present a method to enhance the longitudinal spin Seebeck effect at platinum/yttrium iron garnet (Pt/YIG) interfaces. The introduction of a partial interlayer of bismuth selenide (Bi2Se3, 2.5% surface coverage) interfaces significant... Read More about Bi2Se3 interlayer treatments affecting the Y3Fe5O12 (YIG) platinum spin Seebeck effect.

Conducting poly(3,4-ethylenedioxythiophene) materials with sustainable carrageenan counter-ions and their thermoelectric properties (2023)
Journal Article
Duan, Z., Phillips, J., Liirò-Peluso, L., Woodward, S., Makarovsky, O., Weir, M. P., Pereira, H. J., & Amabilino, D. B. (2023). Conducting poly(3,4-ethylenedioxythiophene) materials with sustainable carrageenan counter-ions and their thermoelectric properties. Materials Advances, 4(22), 5573-5584. https://doi.org/10.1039/d3ma00547j

The preparation and properties of conducting polymers comprising poly(3,4-ethylenedioxythiophene) (PEDOT) and two types of carrageenan – each on their own or combined – as counter-ions are described. The aim of the work is to provide alternative, mor... Read More about Conducting poly(3,4-ethylenedioxythiophene) materials with sustainable carrageenan counter-ions and their thermoelectric properties.

Wafer-Scale Two-Dimensional Semiconductors for Deep UV Sensing (2023)
Journal Article
Shiffa, M., Dewes, B. T., Bradford, J., Cottam, N. D., Cheng, T. S., Mellor, C. J., Makarovskiy, O., Rahman, K., O'Shea, J. N., Beton, P. H., Novikov, S. V., Ben, T., Gonzalez, D., Xie, J., Zhang, L., & Patanè, A. (2024). Wafer-Scale Two-Dimensional Semiconductors for Deep UV Sensing. Small, 20(7), Article 2305865. https://doi.org/10.1002/smll.202305865

2D semiconductors (2SEM) can transform many sectors, from information and communication technology to healthcare. To date, top‐down approaches to their fabrication, such as exfoliation of bulk crystals by “scotch‐tape,” are widely used, but have limi... Read More about Wafer-Scale Two-Dimensional Semiconductors for Deep UV Sensing.