Outputs (10)

A Pearson's Random Walk Method of Estimating the Electromagnetic Emissions of N Parallel Connected Power Electronic Converters (2025)
Journal Article
Ballukja, E., Niewiadomski, K., Koch, P., Bojarski, J., Evans, P., Moonen, N., Sumner, M., & W. P. Thomas, D. (2025). A Pearson's Random Walk Method of Estimating the Electromagnetic Emissions of N Parallel Connected Power Electronic Converters. IEEE Transactions on Electromagnetic Compatibility, 67(3), 1004-1015. https://doi.org/10.1109/TEMC.2025.3556297

This article presents a Pearson's random walk approach for modelling the electromagnetic emissions of N parallel connected power electronic converters. For the first time, a methodology that enables testing the random walk approach is presented. This... Read More about A Pearson's Random Walk Method of Estimating the Electromagnetic Emissions of N Parallel Connected Power Electronic Converters.

Characterisation and modelling of gallium nitride power semiconductor devices dynamic on-state resistance (2017)
Journal Article
Li, K., Evans, P., & Johnson, M. (2018). Characterisation and modelling of gallium nitride power semiconductor devices dynamic on-state resistance. IEEE Transactions on Power Electronics, 33(6), 5262 - 5273. https://doi.org/10.1109/TPEL.2017.2730260

GaN-HEMTs suffer from trapping effects which increases device ON-state resistance (RDS(on)) above its theoretical value. This increase is a function of the applied DC bias when the device is in its OFF state, and the time which the device is biased f... Read More about Characterisation and modelling of gallium nitride power semiconductor devices dynamic on-state resistance.

SiC/GaN power semiconductor devices: a theoretical comparison and experimental evaluation under different switching conditions (2017)
Journal Article
Li, K., Evans, P., & Johnson, M. (in press). SiC/GaN power semiconductor devices: a theoretical comparison and experimental evaluation under different switching conditions. IET Electrical Systems in Transportation, https://doi.org/10.1049/iet-est.2017.0022

The conduction and switching losses of SiC and GaN power transistors are compared in this paper. Voltage rating of commercial GaN power transistors is less than 650V while that of SiC power transistors is less than 1200V. The paper begins with a theo... Read More about SiC/GaN power semiconductor devices: a theoretical comparison and experimental evaluation under different switching conditions.

Using multi time-scale electro-thermal simulation approach to evaluate SiC-MOSFET power C=converter in virtual prototyping design tool (2017)
Presentation / Conference Contribution
Li, K., Evans, P., & Johnson, C. M. Using multi time-scale electro-thermal simulation approach to evaluate SiC-MOSFET power C=converter in virtual prototyping design tool. Presented at IEEE COMPEL 2017

Using virtual prototyping (VP) design tool to eval¬uate power converter electro-thermal performance can help designers to validate prototype in a quick way. However, different system time-scale requires efficient electro-thermal simulation techniques... Read More about Using multi time-scale electro-thermal simulation approach to evaluate SiC-MOSFET power C=converter in virtual prototyping design tool.

SiC and GaN power transistors switching energy evaluation in hard and soft switching conditions (2016)
Presentation / Conference Contribution
Li, K., Evans, P., & Johnson, C. M. SiC and GaN power transistors switching energy evaluation in hard and soft switching conditions. Presented at 4th IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA 2016)

SiC and GaN power transistors switching energy are compared in this paper. In order to compare switching energy Esw of the same power rating device, a theoretical analysis is given to compare SiC device conduction loss and switching losses change whe... Read More about SiC and GaN power transistors switching energy evaluation in hard and soft switching conditions.

SiC/GaN power semiconductor devices theoretical comparison and experimental evaluation (2016)
Presentation / Conference Contribution
Li, K., Evans, P., & Johnson, C. M. SiC/GaN power semiconductor devices theoretical comparison and experimental evaluation. Presented at 13th IEEE Vehicle Power and Propulsion Conference (VPPC 2016)

SiC and GaN power transistors conduction loss and switching losses are compared in this paper. In order to compare performance of the same power rating device, a theoretical analysis is given to compare SiC device conduction loss and switching losses... Read More about SiC/GaN power semiconductor devices theoretical comparison and experimental evaluation.

Developing power semiconductor device model for virtual prototyping of power electronics systems (2016)
Presentation / Conference Contribution
Li, K., Evans, P., & Johnson, C. M. Developing power semiconductor device model for virtual prototyping of power electronics systems. Presented at 13th IEEE Vehicle Power and Propulsion Conference (VPPC 2016)

Virtual prototyping (VP) is very important for power electronics systems design. A virtual prototyping design tool based on different modelling technology and model order reduction is proposed in the paper. In order to combine circuit electromagnetic... Read More about Developing power semiconductor device model for virtual prototyping of power electronics systems.

GaN-HEMT dynamic ON-state resistance characterisation and modelling (2016)
Presentation / Conference Contribution
Li, K., Evans, P., & Johnson, C. M. GaN-HEMT dynamic ON-state resistance characterisation and modelling. Presented at 17th IEEE Workshop on Control and Modeling for Power Electronics, COMPEL 2016

GaN-HEMTs suffer from trapping effects which might increase device ON-state resistance (RDS(on)) values. Thus, dynamic RDS(on) of a commercial GaN-HEMT is characterized at different bias voltages in the paper by a proposed measurement circuit. Based... Read More about GaN-HEMT dynamic ON-state resistance characterisation and modelling.

Damage Evolution in Al Wire Bonds Subjected to a Junction Temperature Fluctuation of 30K (2016)
Journal Article
Agyakwa, P., Yang, L., Arjmand, E., Evans, P., Corfield, M., & Johnson, C. M. (2016). Damage Evolution in Al Wire Bonds Subjected to a Junction Temperature Fluctuation of 30K. Journal of Electronic Materials, 45, 3659-3672. https://doi.org/10.1007/s11664-016-4519-0

© 2016, The Author(s). Ultrasonically bonded heavy Al wires subjected to a small junction temperature fluctuation under power cycling from 40°C to 70°C were investigated using a non-destructive three-dimensional (3-D) x-ray tomography evaluation appr... Read More about Damage Evolution in Al Wire Bonds Subjected to a Junction Temperature Fluctuation of 30K.

Packaging/assembling technologies for a high performance SiC-based planar power module
Presentation / Conference Contribution
Li, J., Agyakwa, P., Evans, P., Johnson, C. M., Zhao, Y., Wu, Y., & Evans, K. Packaging/assembling technologies for a high performance SiC-based planar power module. Presented at Greener Aviation Conference 2014: Clean Sky Breakthrough and Worldwide Status

This work is to investigate the relevant packaging / assembling technologies for developing a SiC-based planar power module which is aimed to meet the requirements such as operating temperature of -60 °C to 200 °C, SiC devices connected to 540 V DC b... Read More about Packaging/assembling technologies for a high performance SiC-based planar power module.