Outputs (3)

Influence of gate bias on the avalanche ruggedness of SiC power MOSFETs (2017)
Presentation / Conference Contribution
Fayyaz, A., Castellazzi, A., Romano, G., Riccio, M., Urresti, J., & Wright, N. Influence of gate bias on the avalanche ruggedness of SiC power MOSFETs. Presented at 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD)

This paper investigates the effect of negative gate bias voltage (VGS) on the avalanche breakdown robustness of commercial state-of-the-art silicon carbide (SiC) power MOSFETs. The device’s ability to withstand energy dissipation during avalanche reg... Read More about Influence of gate bias on the avalanche ruggedness of SiC power MOSFETs.

Transient out-of-SOA robustness of SiC power MOSFETs (2017)
Presentation / Conference Contribution
Castellazzi, A., Fayyaz, A., Romano, G., Riccio, M., Irace, A., Urresti-Ibanez, J., & Wright, N. Transient out-of-SOA robustness of SiC power MOSFETs. Presented at 2017 IEEE International Reliability Physics Symposium (IRPS 2017)

Beyond their main function of high-frequency switches in modulated power converters, solid-state power devices are required in many application domains to also ensure robustness against a number of overload operational conditions. This paper consider... Read More about Transient out-of-SOA robustness of SiC power MOSFETs.

A comprehensive study on the avalanche breakdown robustness of silicon carbide power MOSFETs (2017)
Journal Article
Fayyaz, A., Romano, G., Urresti, J., Riccio, M., Castellazzi, A., Irace, A., & Wright, N. (2017). A comprehensive study on the avalanche breakdown robustness of silicon carbide power MOSFETs. Energies, 10(4), Article 452. https://doi.org/10.3390/en10040452

This paper presents an in-depth investigation into the avalanche breakdown robustness of commercial state-of-the-art silicon carbide (SiC) power MOSFETs comprising of functional as well as structural characterization and the corresponding underlying... Read More about A comprehensive study on the avalanche breakdown robustness of silicon carbide power MOSFETs.