Professor LEE EMPRINGHAM's Outputs (3)

A fast switching fast bridge using GaN transistors (2024)
Presentation / Conference Contribution
Marchant, S., & Empringham, L. (2024, December). A fast switching fast bridge using GaN transistors. Paper presented at 9th IEEE Southern Power Electronics Conference, Brisbane, Australia

This paper presents the design and evaluation of a half bridge based around off-the-shelf gallium nitride power devices and a bespoke printed circuit board. The necessary parasitic evaluation at the design stage was not straightforward due to the in... Read More about A fast switching fast bridge using GaN transistors.

A Non-Computationally Intensive, Capacitor Balancing Technique for a Multilevel Matrix Converter (2024)
Presentation / Conference Contribution
Turner, B., De Lillo, L., Empringham, L., & Rovere, L. (2024, June). A Non-Computationally Intensive, Capacitor Balancing Technique for a Multilevel Matrix Converter. Presented at 2024 International Symposium on Power Electronics, Electrical Drives, Automation and Motion (SPEEDAM), Napoli, Italy

Industrial motors use approximately a third of the worlds electrical energy. Addressing energy savings in this area can be seen as critical to combat global warming and reduce carbon dioxide emissions. Compact power conversion techniques and topologi... Read More about A Non-Computationally Intensive, Capacitor Balancing Technique for a Multilevel Matrix Converter.

Silicon Carbide n-IGBTs: Structure Optimization for Ruggedness Enhancement (2024)
Journal Article
Almpanis, I., Antoniou, M., Evans, P., Empringham, L., Gammon, P., Undrea, F., Mawby, P., & Lophitis, N. (2024). Silicon Carbide n-IGBTs: Structure Optimization for Ruggedness Enhancement. IEEE Transactions on Industry Applications, 60(3), 4251-4263. https://doi.org/10.1109/tia.2024.3354870

In recent years, silicon carbide (SiC) based devices are increasingly replacing their silicon counterparts in power conversion applications due to their performance superiority. SiC insulated-gate bipolar transistors are particularly interesting as t... Read More about Silicon Carbide n-IGBTs: Structure Optimization for Ruggedness Enhancement.