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Professor LEE EMPRINGHAM's Outputs (3)

A hybrid control method to suppress the three time fundamental frequency neutral-point voltage fluctuation in a VIENNA rectifier (2015)
Journal Article
Song, W.-Z., Xing, F.-X., Yang, H., Empringham, L., De Lillo, L., Wheeler, P., Li, J., & Zhong, Y.-R. (2015). A hybrid control method to suppress the three time fundamental frequency neutral-point voltage fluctuation in a VIENNA rectifier. IEEE Journal of Emerging and Selected Topics in Power Electronics, 4(2), https://doi.org/10.1109/JESTPE.2015.2503125

This paper presents a solution to the control of the three times fundamental frequency fluctuation of the neutral-point in a VIENNA rectifier. A hybrid method combining a dynamic adjustment factor with a voltage deviation control of the split DC-link... Read More about A hybrid control method to suppress the three time fundamental frequency neutral-point voltage fluctuation in a VIENNA rectifier.

Short-circuit fault analysis and isolation strategy for matrix converters (2015)
Journal Article
Wang, L.-N., De Lillo, L., Brunson, C., Empringham, L., & Wheeler, P. (in press). Short-circuit fault analysis and isolation strategy for matrix converters. Journal of Central South University of Technology, 22(9), https://doi.org/10.1007/s11771-015-2886-y

The behavior of matrix converter (MC) drive systems under the condition of MC short-circuit faults is comprehensively investigated. Two isolation strategies using semiconductors and high speed fuses (HSFs) for MC short-circuit faults are examined and... Read More about Short-circuit fault analysis and isolation strategy for matrix converters.

Experimental comparison of a matrix converter using Si IGBT and SiC MOSFETs (2015)
Journal Article
Trentin, A., De Lillo, L., Empringham, L., Wheeler, P., & Clare, J. C. (2015). Experimental comparison of a matrix converter using Si IGBT and SiC MOSFETs. IEEE Journal of Emerging and Selected Topics in Power Electronics, 3(2), https://doi.org/10.1109/JESTPE.2014.2381001

This paper presents an analytical and experimental comparison between comparable Silicon (Si) IGBTs and Silicon Carbide (SiC) MOSFETS when used in a direct AC/AC matrix converter circuit. The switching performance of the two devices is analysed and t... Read More about Experimental comparison of a matrix converter using Si IGBT and SiC MOSFETs.