Structural and electrical characterization of AuPtAlTi ohmic contacts to AlGaN/GaN with varying annealing temperature and Al content

Fay, Mike W.; Han, Y.; Brown, Paul D.; Harrison, Ian; Hilton, K.P.; Munday, A.; Wallis, D.; Balmer, R.S.; Uren, M.J.; Martin, T.

Abstract

The effect of varying annealing temperature and Al layer thickness on the structural and electrical characteristics of AuPtAlTi/AlGaN/GaN ohmic contact structures has been systematically investigated. The relationship between annealing temperature, Al content, interfacial microstructure, surface planarity and contact resistance is
examined. In particular, the presence of a detrimental low temperature Pt-Al reaction is identified. This is implicated in both the requirement for a higher Al:Ti ratio than is required for related AuPdAlTi contact schemes and through the degraded temperature dependent resistance behaviour of the annealed AuPtAlTi contacts.

Citation

Fay, M. W., Han, Y., Brown, P. D., Harrison, I., Hilton, K., Munday, A., Wallis, D., Balmer, R., Uren, M., & Martin, T. (2008). Structural and electrical characterization of AuPtAlTi ohmic contacts to AlGaN/GaN with varying annealing temperature and Al content. Journal of Applied Physics, 103(7), https://doi.org/10.1063/1.2890978

• Journal Article Type: Article
• Publication Date: Apr 1, 2008
• Deposit Date: Aug 31, 2011
• Publicly Available Date: Aug 31, 2011
• Journal: Journal of Applied Physics
• Print ISSN: 0021-8979
• Electronic ISSN: 1089-7550
• Publisher: American Institute of Physics
• Peer Reviewed: Not Peer Reviewed
• Volume: 103
• Issue: 7
• DOI: https://doi.org/10.1063/1.2890978
• Keywords: N-TYPE GAN; FIELD-EFFECT TRANSISTORS; THERMAL-STABILITY; RESISTANCE; TI; MICROSTRUCTURE; MULTILAYERS; PERFORMANCE
• Public URL: https://nottingham-repository.worktribe.com/output/704598
• Publisher URL: http://jap.aip.org/resource/1/japiau/v103/i7/p074501_s1
• Additional Information: Pre-print - originally submitted version (August 2007), prior to referee's comments and corrections.