Investigation of the structural, optical and electrical properties of indium-doped TiO2 thin films grown by Pulsed Laser Deposition technique on low and high index GaAs planes

Al mashary, Faisal S.; Felix, Jorlandio F.; Ferreira, Sukarno O.; de Souza, Daniele; Gobato, Yara G.; Chauhan, Jasbinder; Alexeeva, Natalia; Henini, Mohamed; Albadri, Abdulrahman M.; Alyamani, Ahmed Y.

Abstract

© 2020 Elsevier B.V. The properties of In-doped TiO2 grown by Pulsed Laser Deposition on (1 0 0) and (3 1 1)B GaAs substrates have been investigated. X-ray diffraction and photoluminescence results have shown that samples grown on (3 1 1)B GaAs planes have better crystallographic properties than those grown on (1 0 0). Both anatase and rutile phases were detected in samples with lower In-doping (In = 5 nm) while only rutile phase was observed for higher In-doped samples (In = 15 nm). Furthermore, In-doping adversely affected the electrical properties of samples grown on (1 0 0) substrates while it enhanced those of (3 1 1)B samples. Two shallow defects were detected in all samples except for (3 1 1)B sample (In = 15 nm) where three shallow defects were observed. The presence of more shallow defects in this sample is evidenced by a red-shift in the absorption spectrum. It was concluded that sample (3 1 1)B (In = 15 nm) is best among all other samples and makes it more suitable for solar cell applications.

Citation

Al mashary, F. S., Felix, J. F., Ferreira, S. O., de Souza, D., Gobato, Y. G., Chauhan, J., …Alyamani, A. Y. (2020). Investigation of the structural, optical and electrical properties of indium-doped TiO2 thin films grown by Pulsed Laser Deposition technique on low and high index GaAs planes. Materials Science and Engineering: B, 259, Article 114578. https://doi.org/10.1016/j.mseb.2020.114578

• Journal Article Type: Article
• Acceptance Date: May 19, 2020
• Online Publication Date: May 29, 2020
• Publication Date: Sep 1, 2020
• Deposit Date: May 31, 2020
• Publicly Available Date: Nov 30, 2021
• Journal: Materials Science and Engineering B: Solid-State Materials for Advanced Technology
• Print ISSN: 0921-5107
• Publisher: Elsevier
• Peer Reviewed: Peer Reviewed
• Volume: 259
• Article Number: 114578
• DOI: https://doi.org/10.1016/j.mseb.2020.114578
• Keywords: Mechanical Engineering; General Materials Science; Mechanics of Materials; Condensed Matter Physics
• Public URL: https://nottingham-repository.worktribe.com/output/4546069
• Publisher URL: https://www.sciencedirect.com/science/article/abs/pii/S0921510720300854
• Additional Information: This article is maintained by: Elsevier; Article Title: Investigation of the structural, optical and electrical properties of indium-doped TiO2 thin films grown by Pulsed Laser Deposition technique on low and high index GaAs planes; Journal Title: Materials Science and Engineering: B; CrossRef DOI link to publisher maintained version: https://doi.org/10.1016/j.mseb.2020.114578; Content Type: article; Copyright: © 2020 Elsevier B.V. All rights reserved.