Performance Improvement of >10kV SiC IGBTs with Retrograde p-Well

Tiwari, Amit K.; Antoniou, Marina; Lophitis, Neo; Perkins, Samuel; Trajkovic, Tanya; Trajkovic, Tatjana; Udrea, Florin

Abstract

A p-well consisting of a retrograde doping profile is investigated for performance improvement of >10kV SiC IGBTs. The retrograde p-well, which can be realized using low-energy shallow implants, effectively addresses the punch-through, a common issue in high-voltage vertical architectures consisting of a conventional p-well with typical doping density of 1e17cm-3 and depth 1µm. The innovative approach offers an extended control over the threshold voltage. Without any punch-through, a threshold voltage in the range 6V-7V is achieved with gate-oxide thickness of 100nm. Gate oxide thickness is typically restricted to 50nm if a conventional p-well with doping density of 1e17cm-3 is utilized. We therefore propose a highly promising solution, the retrograde p-well, for the development of >10kV SiC IGBTs.

Citation

Tiwari, A. K., Antoniou, M., Lophitis, N., Perkins, S., Trajkovic, T., Trajkovic, T., & Udrea, F. (2018, September). Performance Improvement of >10kV SiC IGBTs with Retrograde p-Well. Presented at 12th European Conference on Silicon Carbide and Related Materials (ECSCRM 2018), Birmingham, UK

• Presentation Conference Type: Edited Proceedings
• Conference Name: 12th European Conference on Silicon Carbide and Related Materials (ECSCRM 2018)
• Start Date: Sep 2, 2018
• End Date: Sep 6, 2018
• Acceptance Date: May 25, 2018
• Publication Date: Jul 31, 2019
• Deposit Date: May 5, 2020
• Publisher: Trans Tech Publications
• Volume: 963
• Pages: 639-642
• Series Title: Materials Science Forum
• Series ISSN: 1662-9752
• Book Title: Proceedings of 12th European Conference on Silicon Carbide and Related Materials (ECSCRM 2018)
• ISBN: 9783035713329
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.963.639
• Keywords: Breakdown Voltage, High-voltage SiC IGBT, Ion-implantation, Punch-through, Retrograde p-well, Threshold voltage control
• Public URL: https://nottingham-repository.worktribe.com/output/4238127
• Publisher URL: https://www.scientific.net/MSF.963.639