Improving Current Controllability in Bi-Mode Gate Commutated Thyristors

Lophitis, Neophytos; Antoniou, Marina; Udrea, Florin; Vemulapati, Umamaheswara; Arnold, Martin; Nistor, Iulian; Vobecky, Jan; Rahimo, Munaf

Abstract

© 2015 IEEE. The Bi-mode gate commutated thyristor (BGCT) is a new type of reverse conducting Gate Commutated Thyristor (GCT). This paper focuses on the maximum controllable current capability of BGCTs and proposes new solutions which can increase it. The impact of proposed solutions in the turn-ON and turn-OFF is also assessed. For this analysis, a 2-D mixed mode model for full-wafer device simulations has been developed and utilized.

Citation

Lophitis, N., Antoniou, M., Udrea, F., Vemulapati, U., Arnold, M., Nistor, I., …Rahimo, M. (2015). Improving Current Controllability in Bi-Mode Gate Commutated Thyristors. IEEE Transactions on Electron Devices, 62(7), 2263-2269. https://doi.org/10.1109/TED.2015.2428994

• Journal Article Type: Article
• Acceptance Date: Jan 1, 2015
• Online Publication Date: May 22, 2015
• Publication Date: Jul 1, 2015
• Deposit Date: Apr 24, 2020
• Journal: IEEE Transactions on Electron Devices
• Print ISSN: 0018-9383
• Publisher: Institute of Electrical and Electronics Engineers
• Peer Reviewed: Peer Reviewed
• Volume: 62
• Issue: 7
• Pages: 2263-2269
• DOI: https://doi.org/10.1109/TED.2015.2428994
• Keywords: semiconductor device models, thyristors, 2D mixed mode model, bimode gate commutated thyristors, current controllability, full wafer device simulations, reverse conducting gate commutated thyristor, Full wafer modeling, gate commutated thyristor (GCT), ma
• Public URL: https://nottingham-repository.worktribe.com/output/4238043
• Publisher URL: https://ieeexplore.ieee.org/document/7112118