Study of a Silicon Carbide MOSFET Power Module to Establish the Benefits of Adding Anti-parallel Schottky Diodes

Trentin, Andrew; Hind, David; Degano, Marco; Tighe, Christopher; Arevalo, Saul Lopez; Yang, Li; Johnson, Mark; Wheeler, Pat; Gerada, Christopher; Harris, Anne; Packwood, Matthew

doi:10.1109/ECCE.2018.8557415

Study of a Silicon Carbide MOSFET Power Module to Establish the Benefits of Adding Anti-parallel Schottky Diodes

Trentin, Andrew; Hind, David; Degano, Marco; Tighe, Christopher; Arevalo, Saul Lopez; Yang, Li; Johnson, Mark; Wheeler, Pat; Gerada, Christopher; Harris, Anne; Packwood, Matthew

Authors

Dr ANDREW TRENTIN andrew.trentin@nottingham.ac.uk
Senior Application Engineers in n Industrialisation of Electrical Machines and Drives

David Hind

Marco Degano

Christopher Tighe

Dr SAUL LOPEZ AREVALO SAUL.LOPEZ_AREVALO@NOTTINGHAM.AC.UK
Research Fellow

Li Yang

Professor MARK JOHNSON MARK.JOHNSON@NOTTINGHAM.AC.UK
PROFESSOR OF ADVANCED POWER CONVERSION

Professor PATRICK WHEELER pat.wheeler@nottingham.ac.uk
PROFESSOR OF POWER ELECTRONIC SYSTEMS

Professor CHRISTOPHER GERADA CHRIS.GERADA@NOTTINGHAM.AC.UK
PROFESSOR OF ELECTRICAL MACHINES

Anne Harris

Matthew Packwood

Abstract

The majority of commercial Silicon Carbide (SiC) MOSFET based power modules available on the market today also include SiC Schottky diodes placed in anti-parallel with the MOSFETs. Using an accurate electrical and thermal simulation model this paper analyses the difference between two power modules; one with anti-parallel SiC Schottky diodes and one without for different load conditions in a specific drive application. The main objective of this paper is to explain the advantages and disadvantages of using anti-parallel SiC Schottky diodes with SiC MOSFETs. Experimental results are also presented to validate the simulation results.

Citation

Trentin, A., Hind, D., Degano, M., Tighe, C., Arevalo, S. L., Yang, L., Johnson, M., Wheeler, P., Gerada, C., Harris, A., & Packwood, M. (2018, September). Study of a Silicon Carbide MOSFET Power Module to Establish the Benefits of Adding Anti-parallel Schottky Diodes. Presented at 2018 IEEE Energy Conversion Congress and Exposition (ECCE), Portland, OR, USA

Presentation Conference Type	Conference Paper (published)
Conference Name	2018 IEEE Energy Conversion Congress and Exposition (ECCE)
Start Date	Sep 23, 2018
End Date	Sep 27, 2018
Acceptance Date	Apr 12, 2018
Online Publication Date	Dec 6, 2018
Publication Date	Sep 23, 2018
Deposit Date	Feb 8, 2019
Publicly Available Date	Feb 11, 2019
Publisher	Institute of Electrical and Electronics Engineers
Pages	1829-1836
Book Title	2018 IEEE Energy Conversion Congress and Exposition (ECCE)
ISBN	9781479973132
DOI	https://doi.org/10.1109/ECCE.2018.8557415
Public URL	https://nottingham-repository.worktribe.com/output/1530265
Publisher URL	https://ieeexplore.ieee.org/document/8557415
Contract Date	Feb 8, 2019