Donor-doping and reduced leakage current in Nb-doped Na0.5Bi0.5TiO3

Li, Ming; Li, Linhao; Zang, Jiadong; Sinclair, Derek C.

Abstract

Low levels of so-called “donor-doping” in titanate-based perovskite oxides such as La for Ba, Sr, and Nb for Ti in (Ba, Sr)TiO3 can significantly reduce the resistivity of these typical (d0) dielectric materials and expand application areas to positive temperature coefficient resistors, thermoelectrics, conductive wafers as thin film substrates, and solid oxide fuel cell anode materials. Here, we show low levels of Nb-doping (≤1 at. %) on the Ti-site in the well-known lead-free piezoelectric perovskite oxide Na0.5Bi0.5TiO3 (NBT) produces completely different behaviours whereby much higher resistivity is obtained, therefore indicating a different donor-doping (substitution) mechanism. There is a switch in conduction mechanism from oxygen-ions in undoped NBT with an activation energy (Ea) of

Citation

Li, M., Li, L., Zang, J., & Sinclair, D. C. (2015). Donor-doping and reduced leakage current in Nb-doped Na0.5Bi0.5TiO3. Applied Physics Letters, 106(10), Article 102904. https://doi.org/10.1063/1.4914509

• Journal Article Type: Article
• Acceptance Date: Feb 28, 2015
• Online Publication Date: Mar 12, 2015
• Publication Date: Mar 9, 2015
• Deposit Date: Jul 25, 2018
• Print ISSN: 0003-6951
• Electronic ISSN: 1077-3118
• Publisher: American Institute of Physics
• Peer Reviewed: Peer Reviewed
• Volume: 106
• Issue: 10
• Article Number: 102904
• DOI: https://doi.org/10.1063/1.4914509
• Public URL: https://nottingham-repository.worktribe.com/output/1103049
• Publisher URL: https://aip.scitation.org/doi/10.1063/1.4914509
• Related Public URLs: https://pubs.aip.org/aip/apl/article/106/10/102904/236615/Donor-doping-and-reduced-leakage-current-in-Nb