Outputs (4)

VTH subthreshold hysteresis technology and temperature dependence in commercial 4H-SiC MOSFETs (2018)
Journal Article
Asllani, B., Fayyaz, A., Castellazzi, A., Morel, H., & Planson, D. (2018). VTH subthreshold hysteresis technology and temperature dependence in commercial 4H-SiC MOSFETs. Microelectronics Reliability, 88-90, 604-609. https://doi.org/10.1016/j.microrel.2018.06.047

VTH subthreshold hysteresis measured in commercially available 4H-SiC MOSFET is more pronounced in trench than in planar ones. All planar devices from different manufacturers exhibit an inverse temperature dependence, with the hysteresis amplitude re... Read More about VTH subthreshold hysteresis technology and temperature dependence in commercial 4H-SiC MOSFETs.

Avalanche ruggedness of parallel SiC power MOSFETs (2018)
Journal Article
Fayyaz, A., Asllani, B., Castellazzi, A., Riccio, M., & Irace, A. (2018). Avalanche ruggedness of parallel SiC power MOSFETs. Microelectronics Reliability, 88-90, 666-670. https://doi.org/10.1016/j.microrel.2018.06.038

© 2018 Elsevier Ltd The aim of this paper is to investigate the impact of electro-thermal device parameter spread on the avalanche ruggedness of parallel silicon carbide (SiC) power MOSFETs representative of multi-chip layout within an integrated pow... Read More about Avalanche ruggedness of parallel SiC power MOSFETs.

Analysis of device and circuit parameters variability in SiC MOSFETs-based multichip power module (2018)
Presentation / Conference Contribution
Riccio, M., Borghese, A., Romano, G., D 'alessandro, V., Fayyaz, A., Castellazzi, A., Maresca, L., Breglio, G., & Irace, A. (2018, September). Analysis of device and circuit parameters variability in SiC MOSFETs-based multichip power module. Presented at 20th European Conference on Power Electronics and Applications (EPE 18 ECCE Europe), Riga, Latvia

In this contribution, a previously developed temperature-dependent SPICE model for SiC power MOSFETs is calibrated on experimental data of commercially available devices. Thereafter, its features are exploited for dynamic ET simulations of paralleled... Read More about Analysis of device and circuit parameters variability in SiC MOSFETs-based multichip power module.

Multi-Chip SiC MOSFET Power Modules for Standard Manufacturing, Mounting and Cooling (2018)
Presentation / Conference Contribution
Castellazzi, A., Fayyaz, A., Gurpinar, E., Hussein, A., Li, J., & Mouawad, B. (2018, May). Multi-Chip SiC MOSFET Power Modules for Standard Manufacturing, Mounting and Cooling. Presented at 2018 International Power Electronics Conference (ECCE Asia-IPEC 2018), Niigata, Japan

Taking full advantage of the superior characteristics of SiC Power MOSFETs in the application requires the development of bespoke packaging solutions. Their design needs to thoroughly encompass electromagnetic and electro-thermal aspects to yield maj... Read More about Multi-Chip SiC MOSFET Power Modules for Standard Manufacturing, Mounting and Cooling.