Outputs (18)

Direct Measurements of Anisotropic Thermal Transport in γ-InSe Nanolayers via Cross-Sectional Scanning Thermal Microscopy (2023)
Journal Article
Gonzalez-Munoz, S., Agarwal, K., Castanon, E. G., Kudrynskyi, Z. R., Kovalyuk, Z. D., Spièce, J., …Kolosov, O. V. (2023). Direct Measurements of Anisotropic Thermal Transport in γ-InSe Nanolayers via Cross-Sectional Scanning Thermal Microscopy. Advanced Materials Interfaces, 10(17), Article 2300081. https://doi.org/10.1002/admi.202300081

Van der Waals (vdW) atomically thin materials and their heterostructures offer a versatile platform for the management of nanoscale heat transport and the design of novel thermoelectrics. These require the measurement of highly anisotropic heat trans... Read More about Direct Measurements of Anisotropic Thermal Transport in γ-InSe Nanolayers via Cross-Sectional Scanning Thermal Microscopy.

Subnanometer-Wide Indium Selenide Nanoribbons (2023)
Journal Article
Cull, W. J., Skowron, S. T., Hayter, R., Stoppiello, C. T., Rance, G. A., Biskupek, J., …Khlobystov, A. N. (2023). Subnanometer-Wide Indium Selenide Nanoribbons. ACS Nano, 17(6), 6062-6072. https://doi.org/10.1021/acsnano.3c00670

Indium selenides (InxSey) have been shown to retain several desirable properties, such as ferroelectricity, tunable photoluminescence through temperature-controlled phase changes, and high electron mobility when confined to two dimensions (2D). In th... Read More about Subnanometer-Wide Indium Selenide Nanoribbons.

Graphene FETs with high and low mobilities have universal temperature-dependent properties (2023)
Journal Article
Gosling, J., Morozov, S. V., Vdovin, E. E., Greenaway, M. T., Khanin, Y. N., Kudrynskyi, Z., …Makarovsky, O. (2023). Graphene FETs with high and low mobilities have universal temperature-dependent properties. Nanotechnology, 34(12), Article 125702. https://doi.org/10.1088/1361-6528/aca981

We use phenomenological modelling and detailed experimental studies of charge carrier transport to investigate the dependence of the electrical resistivity,ρ, on gate voltage,Vg, for a series of monolayer graphene field effect transistors with mobili... Read More about Graphene FETs with high and low mobilities have universal temperature-dependent properties.

Magnetic and Electric Field Dependent Charge Transfer in Perovskite/Graphene Field Effect Transistors (2022)
Journal Article
Cottam, N. D., Austin, J. S., Zhang, C., Patanè, A., Escoffier, W., Goiran, M., …Makarovsky, O. (2023). Magnetic and Electric Field Dependent Charge Transfer in Perovskite/Graphene Field Effect Transistors. Advanced Electronic Materials, 9(2), Article 2200995. https://doi.org/10.1002/aelm.202200995

Stable all-inorganic CsPbX3 perovskite nanocrystals (PNCs) with high optical yield can be used in combination with graphene as photon sensors with high responsivity (up to 106 A W−1) in the VIS-UV range. The performance of these perovskite/graphene f... Read More about Magnetic and Electric Field Dependent Charge Transfer in Perovskite/Graphene Field Effect Transistors.

Hydrogen-Induced Conversion of SnS2 into SnS or Sn: A Route to Create SnS2/SnS Heterostructures (2022)
Journal Article
Patanè, A., Felton, J., Blundo, E., Kudrynskyi, Z., Ling, S., Bradford, J., …Patane, A. (2022). Hydrogen-Induced Conversion of SnS2 into SnS or Sn: A Route to Create SnS2/SnS Heterostructures. Small, 18(33), Article 2202661. https://doi.org/10.1002/smll.202202661

The family of van der Waals (vdW) materials is large and diverse with applications ranging from electronics and optoelectronics to catalysis and chemical storage. However, despite intensive research, there remains significant knowledge-gaps pertainin... Read More about Hydrogen-Induced Conversion of SnS2 into SnS or Sn: A Route to Create SnS2/SnS Heterostructures.

Memristive effects due to charge transfer in graphene gated through ferroelectric CuInP2S6 (2022)
Journal Article
Dey, A., Yan, W., Balakrishnan, N., Xie, S., Kudrynskyi, Z. R., Makarovskiy, O., …Patanè, A. (2022). Memristive effects due to charge transfer in graphene gated through ferroelectric CuInP2S6. 2D Materials, 9(3), Article 035003. https://doi.org/10.1088/2053-1583/ac6191

Ferroelectricity at the nanometre scale can drive the miniaturisation and wide application of ferroelectric devices for memory and sensing applications. The two-dimensional van der Waals (2D-vdWs) ferroelectrics CuInP2S6 (CIPS) has attracted much att... Read More about Memristive effects due to charge transfer in graphene gated through ferroelectric CuInP2S6.

Terahertz control of photoluminescence emission in few-layer InSe (2022)
Journal Article
Venanzi, T., Selig, M., Pashkin, A., Winnerl, S., Katzer, M., Arora, H., …Schneider, H. (2022). Terahertz control of photoluminescence emission in few-layer InSe. Applied Physics Letters, 120(9), Article 092104. https://doi.org/10.1063/5.0080784

A promising route for the development of opto-electronic technology is to use terahertz radiation to modulate the optical properties of semiconductors. Here, we demonstrate the dynamical control of photoluminescence (PL) emission in few-layer InSe us... Read More about Terahertz control of photoluminescence emission in few-layer InSe.

High-Performance Phototransistors by Alumina Encapsulation of a 2D Semiconductor with Self-Aligned Contacts (2022)
Journal Article
Liang, G., Wang, Y., Zhang, J., Kudrynskyi, Z. R., Kovalyuk, Z., Patanè, A., …Song, A. (2022). High-Performance Phototransistors by Alumina Encapsulation of a 2D Semiconductor with Self-Aligned Contacts. Advanced Electronic Materials, 8(5), Article 2100954. https://doi.org/10.1002/aelm.202100954

2D semiconductors are promising candidates for next generation electronics and optoelectronics. However, their exposure to air and/or resists during device fabrication can cause considerable degradation of material quality, hindering their study and... Read More about High-Performance Phototransistors by Alumina Encapsulation of a 2D Semiconductor with Self-Aligned Contacts.

Tunable spin-orbit coupling in two-dimensional InSe (2021)
Journal Article
Ceferino, A., Magorrian, S. J., Zólyomi, V., Bandurin, D. A., Geim, A. K., Patanè, A., …Fal'Ko, V. I. (2021). Tunable spin-orbit coupling in two-dimensional InSe. Physical Review B, 104(12), Article 125432. https://doi.org/10.1103/PhysRevB.104.125432

We demonstrate that spin-orbit coupling (SOC) strength for electrons near the conduction band edge in few-layer γ-InSe films can be tuned over a wide range. This tunability is the result of a competition between film-thickness-dependent intrinsic and... Read More about Tunable spin-orbit coupling in two-dimensional InSe.

Ferroelectric semiconductor junctions based on graphene/In2Se3/graphene van der Waals heterostructures (2021)
Journal Article
Xie, S., Dey, A., Yan, W., Kudrynskyi, Z. R., Balakrishnan, N., Makarovskiy, O., …Patanè, A. (2021). Ferroelectric semiconductor junctions based on graphene/In2Se3/graphene van der Waals heterostructures. 2D Materials, 8(4), Article 045020. https://doi.org/10.1088/2053-1583/ac1ada

The miniaturization of ferroelectric devices offers prospects for non-volatile memories, low-power electrical switches and emerging technologies beyond existing Si-based integrated circuits. An emerging class of ferroelectrics is based on van der Waa... Read More about Ferroelectric semiconductor junctions based on graphene/In2Se3/graphene van der Waals heterostructures.