Outputs (6)

Electron Transport in n-Type InSe van der Waals Crystals with Co Impurities (2022)
Journal Article
Kudrynskyi, Z. R., Mintyanskii, I. V., Savitskii, P. I., & Kovalyuk, Z. D. (2022). Electron Transport in n-Type InSe van der Waals Crystals with Co Impurities. Applied Sciences, 12(19), Article 9932. https://doi.org/10.3390/app12199932

Intercalation and doping are promising routes to tune properties of van der Waals (vdW) semiconductors and pave the way for their applications in digital electronics beyond Moore’s law, sensors and spintronics. The indium selenide (InSe) vdW crystal... Read More about Electron Transport in n-Type InSe van der Waals Crystals with Co Impurities.

Hydrogen-Induced Conversion of SnS2 into SnS or Sn: A Route to Create SnS2/SnS Heterostructures (2022)
Journal Article
Patanè, A., Felton, J., Blundo, E., Kudrynskyi, Z., Ling, S., Bradford, J., …Patane, A. (2022). Hydrogen-Induced Conversion of SnS2 into SnS or Sn: A Route to Create SnS2/SnS Heterostructures. Small, 18(33), Article 2202661. https://doi.org/10.1002/smll.202202661

The family of van der Waals (vdW) materials is large and diverse with applications ranging from electronics and optoelectronics to catalysis and chemical storage. However, despite intensive research, there remains significant knowledge-gaps pertainin... Read More about Hydrogen-Induced Conversion of SnS2 into SnS or Sn: A Route to Create SnS2/SnS Heterostructures.

Memristive effects due to charge transfer in graphene gated through ferroelectric CuInP2S6 (2022)
Journal Article
Dey, A., Yan, W., Balakrishnan, N., Xie, S., Kudrynskyi, Z. R., Makarovskiy, O., …Patanè, A. (2022). Memristive effects due to charge transfer in graphene gated through ferroelectric CuInP2S6. 2D Materials, 9(3), Article 035003. https://doi.org/10.1088/2053-1583/ac6191

Ferroelectricity at the nanometre scale can drive the miniaturisation and wide application of ferroelectric devices for memory and sensing applications. The two-dimensional van der Waals (2D-vdWs) ferroelectrics CuInP2S6 (CIPS) has attracted much att... Read More about Memristive effects due to charge transfer in graphene gated through ferroelectric CuInP2S6.

Terahertz control of photoluminescence emission in few-layer InSe (2022)
Journal Article
Venanzi, T., Selig, M., Pashkin, A., Winnerl, S., Katzer, M., Arora, H., …Schneider, H. (2022). Terahertz control of photoluminescence emission in few-layer InSe. Applied Physics Letters, 120(9), Article 092104. https://doi.org/10.1063/5.0080784

A promising route for the development of opto-electronic technology is to use terahertz radiation to modulate the optical properties of semiconductors. Here, we demonstrate the dynamical control of photoluminescence (PL) emission in few-layer InSe us... Read More about Terahertz control of photoluminescence emission in few-layer InSe.

Characterization of potential nanoporous sodium titanate film formation on Ti6Al4V and TiO2 microspherical substrates via wet-chemical alkaline conversion (2022)
Journal Article
Wadge, M. D., Carrington, M. J., Constantin, H., Orange, K., Greaves, J., Islam, M. T., …Grant, D. M. (2022). Characterization of potential nanoporous sodium titanate film formation on Ti6Al4V and TiO2 microspherical substrates via wet-chemical alkaline conversion. Materials Characterization, 185, Article 111760. https://doi.org/10.1016/j.matchar.2022.111760

The authors present novel insights into the formation of nanoporous, wet-chemically produced sodium titanate films onto microspherical substrates of varying composition. Microspheres of Ti6Al4V (atomised; ca. 20–50 μm), which were utilised due to the... Read More about Characterization of potential nanoporous sodium titanate film formation on Ti6Al4V and TiO2 microspherical substrates via wet-chemical alkaline conversion.

High-Performance Phototransistors by Alumina Encapsulation of a 2D Semiconductor with Self-Aligned Contacts (2022)
Journal Article
Liang, G., Wang, Y., Zhang, J., Kudrynskyi, Z. R., Kovalyuk, Z., Patanè, A., …Song, A. (2022). High-Performance Phototransistors by Alumina Encapsulation of a 2D Semiconductor with Self-Aligned Contacts. Advanced Electronic Materials, 8(5), Article 2100954. https://doi.org/10.1002/aelm.202100954

2D semiconductors are promising candidates for next generation electronics and optoelectronics. However, their exposure to air and/or resists during device fabrication can cause considerable degradation of material quality, hindering their study and... Read More about High-Performance Phototransistors by Alumina Encapsulation of a 2D Semiconductor with Self-Aligned Contacts.