Outputs (71)

Room temperature upconversion electroluminescence from a mid-infrared In(AsN) tunnelling diode (2020)
Journal Article
Di Paola, D. M., Lu, Q., Repiso, E., Kesaria, M., Makarovsky, O., Krier, A., & Patanè, A. (2020). Room temperature upconversion electroluminescence from a mid-infrared In(AsN) tunnelling diode. Applied Physics Letters, 116(14), Article 142108. https://doi.org/10.1063/5.0002407

Light emitting diodes (LEDs) in the mid-infrared (MIR) spectral range require material systems with tailored optical absorption and emission at wavelengths λ > 2 μm. Here, we report on MIR LEDs based on In(AsN)/(InAl)As resonant tunneling diodes (RTD... Read More about Room temperature upconversion electroluminescence from a mid-infrared In(AsN) tunnelling diode.

Room temperature upconversion electroluminescence from a mid-infrared In(AsN) tunneling diode (2020)
Journal Article
Di Paola, D. M., Lu, Q., Repiso, E., Kesaria, M., Makarovsky, O., Krier, A., & Patanè, A. (2020). Room temperature upconversion electroluminescence from a mid-infrared In(AsN) tunneling diode. Applied Physics Letters, 116(14), Article 142108. https://doi.org/10.1063/5.0002407

Light emitting diodes (LEDs) in the mid-infrared (MIR) spectral range require material systems with tailored optical absorption and emission at wavelengths λ > 2 μm. Here, we report on MIR LEDs based on In(AsN)/(InAl)As resonant tunneling diodes (RTD... Read More about Room temperature upconversion electroluminescence from a mid-infrared In(AsN) tunneling diode.

Photoluminescence dynamics in few-layer InSe (2020)
Journal Article
Venanzi, T., Arora, H., Winnerl, S., Pashkin, A., Chava, P., Patane, A., Kovalyuk, Z. D., Kudrynskyi, Z. R., Watanabe, K., Taniguchi, T., Erbe, A., Helm, M., & Schneider, H. (2020). Photoluminescence dynamics in few-layer InSe. Physical Review Materials, 4(4), Article 044001. https://doi.org/10.1103/PhysRevMaterials.4.044001

We study the optical properties of thin flakes of InSe encapsulated in hBN. More specifically, we investigate the photoluminescence (PL) emission and its dependence on sample thickness and temperature. Through the analysis of the PL lineshape, we dis... Read More about Photoluminescence dynamics in few-layer InSe.

Design of van der Waals interfaces for broad-spectrum optoelectronics (2020)
Journal Article
Ubrig, N., Ponomarev, E., Zultak, J., Domaretskiy, D., Zólyomi, V., Terry, D., Howarth, J., Gutiérrez-Lezama, I., Zhukov, A., Kudrynskyi, Z. R., Kovalyuk, Z. D., Patanè, A., Taniguchi, T., Watanabe, K., Gorbachev, R. V., Fal'ko, V. I., & Morpurgo, A. F. (2020). Design of van der Waals interfaces for broad-spectrum optoelectronics. Nature Materials, 19, 299-304. https://doi.org/10.1038/s41563-019-0601-3

Van der Waals (vdW) interfaces based on 2D materials are promising for optoelectronics, as interlayer transitions between different compounds allow tailoring of the spectral response over a broad range. However, issues such as lattice mismatch or a s... Read More about Design of van der Waals interfaces for broad-spectrum optoelectronics.

Production and processing of graphene and related materials (2020)
Journal Article
Backes, C., Abdelkader, A. M., Alonso, C., Andrieux-Ledier, A., Arenal, R., Azpeitia, J., Balakrishnan, N., Banszerus, L., Barjon, J., Bartali, R., Bellani, S., Berger, C., Berger, R., Ortega, M. M. B., Bernard, C., Beton, P. H., Beyer, A., Bianco, A., Bøggild, P., Bonaccorso, F., …Garcia-Hernandez, M. (2020). Production and processing of graphene and related materials. 2D Materials, 7(2), Article 022001. https://doi.org/10.1088/2053-1583/ab1e0a

Resonant tunnelling into the two-dimensional subbands of InSe layers (2020)
Journal Article
Kudrynskyi, Z. R., Kerfoot, J., Mazumder, D., Greenaway, M. T., Vdovin, E. E., Makarovsky, O., Kovalyuk, Z. D., Eaves, L., Beton, P. H., & Patanè, A. (2020). Resonant tunnelling into the two-dimensional subbands of InSe layers. Communications Physics, 3, Article 16. https://doi.org/10.1038/s42005-020-0290-x

Two-dimensional (2D) van der Waals (vdW) crystals have attracted considerable interest for digital electronics beyond Si-based complementary metal oxide semiconductor technologies. Despite the transformative success of Si-based devices, there are lim... Read More about Resonant tunnelling into the two-dimensional subbands of InSe layers.

Van der Waals SnSe2(1-x)S2x alloys: composition-dependent bowing coefficient and electron-phonon interaction (2020)
Journal Article
Kudrynskyi, Z. R., Wang, X., Sutcliffe, J., Bhuiyan, M. A., Fu, Y., Yang, Z., Makarovsky, O., Eaves, L., Solomon, A., Maslyuk, V. T., Kovalyuk, Z. D., Zhang, L., & Patanè, A. (2020). Van der Waals SnSe2(1-x)S2x alloys: composition-dependent bowing coefficient and electron-phonon interaction. Advanced Functional Materials, 30(9), Article 1908092. https://doi.org/10.1002/adfm.201908092

The design of advanced functional materials with customized properties often requires the use of an alloy. This approach has been used for decades, but only recently to create van der Waals (vdW) alloys for applications in electronics, optoelectronic... Read More about Van der Waals SnSe2(1-x)S2x alloys: composition-dependent bowing coefficient and electron-phonon interaction.

Two-Dimensional Covalent Crystals by Chemical Conversion of Thin van der Waals Materials (2019)
Journal Article
Sreepal, V., Yagmurcukardes, M., Vasu, K. S., Kelly, D. J., Taylor, S. F. R., Kravets, V. G., Kudrynskyi, Z., Kovalyuk, Z. D., Patanè, A., Grigorenko, A. N., Haigh, S. J., Hardacre, C., Eaves, L., Sahin, H., Geim, A. K., Peeters, F. M., & Nair, R. R. (2019). Two-Dimensional Covalent Crystals by Chemical Conversion of Thin van der Waals Materials. Nano Letters, 19(9), 6475-6481. https://doi.org/10.1021/acs.nanolett.9b02700

Most of the studied two-dimensional (2D) materials have been obtained by exfoliation of van der Waals crystals. Recently, there has been growing interest in fabricating synthetic 2D crystals which have no layered bulk analogues. These efforts have be... Read More about Two-Dimensional Covalent Crystals by Chemical Conversion of Thin van der Waals Materials.

Schottky-barrier thin-film transistors based on HfO2-capped InSe (2019)
Journal Article
Wang, Y., Zhang, J., Liang, G., Shi, Y., Zhang, Y., Kudrynskyi, Z. R., Kovalyuk, Z. D., Patanè, A., Xin, Q., & Song, A. (2019). Schottky-barrier thin-film transistors based on HfO2-capped InSe. Applied Physics Letters, 115(3), Article 033502. https://doi.org/10.1063/1.5096965

© 2019 Author(s). Indium selenide (InSe) is an emerging two-dimensional semiconductor and a promising candidate for next generation thin film transistors (TFTs). Here, we report on Schottky barrier TFTs (SB-TFTs) in which a 0.9-nm-thick HfO2 dielectr... Read More about Schottky-barrier thin-film transistors based on HfO2-capped InSe.

Hybrid light emitting diodes based on stable, high brightness all-inorganic CsPbI 3 perovskite nanocrystals and InGaN (2019)
Journal Article
Zhang, C., Turyanska, L., Cao, H., Zhao, L., Fay, M. W., Temperton, R., O'Shea, J., Thomas, N. R., Wang, K., Luan, W., & Patanè, A. (2019). Hybrid light emitting diodes based on stable, high brightness all-inorganic CsPbI 3 perovskite nanocrystals and InGaN. Nanoscale, 11(28), 13450-13457. https://doi.org/10.1039/C9NR03707A

Despite important advances in the synthesis of inorganic perovskite nanocrystals (NCs), the long-term instability and degradation of their quantum yield (QY) over time need to be addressed to enable the further development and exploitation of these n... Read More about Hybrid light emitting diodes based on stable, high brightness all-inorganic CsPbI 3 perovskite nanocrystals and InGaN.