Outputs (71)

Magnetic and Electric Field Dependent Charge Transfer in Perovskite/Graphene Field Effect Transistors (2022)
Journal Article
Cottam, N. D., Austin, J. S., Zhang, C., Patanè, A., Escoffier, W., Goiran, M., Pierre, M., Coletti, C., Mišeikis, V., Turyanska, L., & Makarovsky, O. (2023). Magnetic and Electric Field Dependent Charge Transfer in Perovskite/Graphene Field Effect Transistors. Advanced Electronic Materials, 9(2), Article 2200995. https://doi.org/10.1002/aelm.202200995

Stable all-inorganic CsPbX3 perovskite nanocrystals (PNCs) with high optical yield can be used in combination with graphene as photon sensors with high responsivity (up to 106 A W−1) in the VIS-UV range. The performance of these perovskite/graphene f... Read More about Magnetic and Electric Field Dependent Charge Transfer in Perovskite/Graphene Field Effect Transistors.

Van der Waals interfaces in multilayer junctions for ultraviolet photodetection (2022)
Journal Article
Xie, S., Shiffa, M., Shiffa, M., Kudrynskyi, Z. R., Makarovskiy, O., Kovalyuk, Z. D., Zhu, W., Wang, K., & Patanè, A. (2022). Van der Waals interfaces in multilayer junctions for ultraviolet photodetection. npj 2D Materials and Applications, 6(1), Article 61. https://doi.org/10.1038/s41699-022-00338-0

Developments in semiconductor science have led to the miniaturization and improvement of light detection technologies for many applications. However, traditional pn-junctions or three-dimensional device geometries for detection of ultraviolet (UV) li... Read More about Van der Waals interfaces in multilayer junctions for ultraviolet photodetection.

Carrier dynamics in InSe and the impact of terahertz pulses (2022)
Presentation / Conference Contribution
Venanzi, T., Selig, M., Pashkin, A., Winnerl, S., Katzer, M., Arora, H., Erbe, A., Patane, A., Kudrynskyi, Z. R., Kovalyuk, Z. D., Baldassarre, L., Knorr, A., Helm, M., & Schneider, H. (2022, August). Carrier dynamics in InSe and the impact of terahertz pulses. Presented at 2022 47th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz), Delft, Netherlands

We investigate the electron-hole dynamics in few-layer InSe, a van der Waals semiconductor with promising opt-electronic properties. We show that terahertz pulses modulate the spontaneous emission via absorption by photo-excited carriers. We further... Read More about Carrier dynamics in InSe and the impact of terahertz pulses.

Hydrogen-Induced Conversion of SnS2 into SnS or Sn: A Route to Create SnS2/SnS Heterostructures (2022)
Journal Article
Patanè, A., Felton, J., Blundo, E., Kudrynskyi, Z., Ling, S., Bradford, J., Pettinari, G., Cooper, T., Wadge, M., Kovalyuk, Z., Polimeni, A., Beton, P., Grant, D., Walker, G., & Patane, A. (2022). Hydrogen-Induced Conversion of SnS2 into SnS or Sn: A Route to Create SnS2/SnS Heterostructures. Small, 18(33), Article 2202661. https://doi.org/10.1002/smll.202202661

The family of van der Waals (vdW) materials is large and diverse with applications ranging from electronics and optoelectronics to catalysis and chemical storage. However, despite intensive research, there remains significant knowledge-gaps pertainin... Read More about Hydrogen-Induced Conversion of SnS2 into SnS or Sn: A Route to Create SnS2/SnS Heterostructures.

Memristive effects due to charge transfer in graphene gated through ferroelectric CuInP2S6 (2022)
Journal Article
Dey, A., Yan, W., Balakrishnan, N., Xie, S., Kudrynskyi, Z. R., Makarovskiy, O., Yan, F., Wang, K., & Patanè, A. (2022). Memristive effects due to charge transfer in graphene gated through ferroelectric CuInP2S6. 2D Materials, 9(3), Article 035003. https://doi.org/10.1088/2053-1583/ac6191

Ferroelectricity at the nanometre scale can drive the miniaturisation and wide application of ferroelectric devices for memory and sensing applications. The two-dimensional van der Waals (2D-vdWs) ferroelectrics CuInP2S6 (CIPS) has attracted much att... Read More about Memristive effects due to charge transfer in graphene gated through ferroelectric CuInP2S6.

Terahertz control of photoluminescence emission in few-layer InSe (2022)
Journal Article
Venanzi, T., Selig, M., Pashkin, A., Winnerl, S., Katzer, M., Arora, H., Erbe, A., Patanè, A., Kudrynskyi, Z. R., Kovalyuk, Z. D., Baldassarre, L., Knorr, A., Helm, M., & Schneider, H. (2022). Terahertz control of photoluminescence emission in few-layer InSe. Applied Physics Letters, 120(9), Article 092104. https://doi.org/10.1063/5.0080784

A promising route for the development of opto-electronic technology is to use terahertz radiation to modulate the optical properties of semiconductors. Here, we demonstrate the dynamical control of photoluminescence (PL) emission in few-layer InSe us... Read More about Terahertz control of photoluminescence emission in few-layer InSe.

High-Performance Phototransistors by Alumina Encapsulation of a 2D Semiconductor with Self-Aligned Contacts (2022)
Journal Article
Liang, G., Wang, Y., Zhang, J., Kudrynskyi, Z. R., Kovalyuk, Z., Patanè, A., Xin, Q., & Song, A. (2022). High-Performance Phototransistors by Alumina Encapsulation of a 2D Semiconductor with Self-Aligned Contacts. Advanced Electronic Materials, 8(5), Article 2100954. https://doi.org/10.1002/aelm.202100954

2D semiconductors are promising candidates for next generation electronics and optoelectronics. However, their exposure to air and/or resists during device fabrication can cause considerable degradation of material quality, hindering their study and... Read More about High-Performance Phototransistors by Alumina Encapsulation of a 2D Semiconductor with Self-Aligned Contacts.

Large Tunneling Magnetoresistance in van der Waals Ferromagnet/Semiconductor Heterojunctions (2021)
Journal Article
Zhu, W., Lin, H., Yan, F., Hu, C., Wang, Z., Zhao, L., Deng, Y., Kudrynskyi, Z. R., Zhou, T., Kovalyuk, Z. D., Zheng, Y., Patanè, A., Žutić, I., Li, S., Zheng, H., & Wang, K. (2021). Large Tunneling Magnetoresistance in van der Waals Ferromagnet/Semiconductor Heterojunctions. Advanced Materials, 33(51), Article 2104658. https://doi.org/10.1002/adma.202104658

2D layered chalcogenide semiconductors have been proposed as a promising class of materials for low-dimensional electronic, optoelectronic, and spintronic devices. Here, all-2D van der Waals vertical spin-valve devices, that combine the 2D layered se... Read More about Large Tunneling Magnetoresistance in van der Waals Ferromagnet/Semiconductor Heterojunctions.

Tunable spin-orbit coupling in two-dimensional InSe (2021)
Journal Article
Ceferino, A., Magorrian, S. J., Zólyomi, V., Bandurin, D. A., Geim, A. K., Patanè, A., Kovalyuk, Z. D., Kudrynskyi, Z. R., Grigorieva, I. V., & Fal'Ko, V. I. (2021). Tunable spin-orbit coupling in two-dimensional InSe. Physical Review B, 104(12), Article 125432. https://doi.org/10.1103/PhysRevB.104.125432

We demonstrate that spin-orbit coupling (SOC) strength for electrons near the conduction band edge in few-layer γ-InSe films can be tuned over a wide range. This tunability is the result of a competition between film-thickness-dependent intrinsic and... Read More about Tunable spin-orbit coupling in two-dimensional InSe.

Nondestructive Picosecond Ultrasonic Probing of Intralayer and van der Waals Interlayer Bonding in α- and β-In2Se3 (2021)
Journal Article
Yan, W., Akimov, A. V., Page, J. A., Greenaway, M. T., Balanov, A. G., Patanè, A., & Kent, A. J. (2021). Nondestructive Picosecond Ultrasonic Probing of Intralayer and van der Waals Interlayer Bonding in α- and β-In2Se3. Advanced Functional Materials, 31(50), Article 2106206. https://doi.org/10.1002/adfm.202106206

The interplay between the strong intralayer covalent-ionic bonds and the weak interlayer van der Waals (vdW) forces between the neighboring layers of vdW crystals gives rise to unique physical and chemical properties. Here, the intralayer and interla... Read More about Nondestructive Picosecond Ultrasonic Probing of Intralayer and van der Waals Interlayer Bonding in α- and β-In2Se3.