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Optically Gated Terahertz-Field-Driven Switching of Antiferromagnetic CuMnAs (2021)
Journal Article
Heitz, J. J., Nádvorník, L., Balos, V., Behovits, Y., Chekhov, A. L., Seifert, T. S., …Kampfrath, T. (2021). Optically Gated Terahertz-Field-Driven Switching of Antiferromagnetic CuMnAs. Physical Review Applied, 16(6), Article 064047. https://doi.org/10.1103/PhysRevApplied.16.064047

We show scalable and complete suppression of the recently reported terahertz-pulse-induced switching between different resistance states of antiferromagnetic CuMnAs thin films by ultrafast gating. The gating functionality is achieved by an optically... Read More about Optically Gated Terahertz-Field-Driven Switching of Antiferromagnetic CuMnAs.

Performance evaluation of a new 30 μm thick GaAs X-ray detector grown by MBE (2021)
Journal Article
Lioliou, G., Poyser, C. L., Whale, J., Campion, R. P., Kent, A. J., & Barnett, A. (2021). Performance evaluation of a new 30 μm thick GaAs X-ray detector grown by MBE. Materials Research Express, 8(2), Article 025909. https://doi.org/10.1088/2053-1591/abe73c

A circular mesa (400 μm diameter) GaAs p+-i-n+ photodiode with a 30 μm thick i layer was characterized for its performance as a detector in photon counting x-ray spectroscopy at 20 °C. The detector was fabricated from material grown by molecular beam... Read More about Performance evaluation of a new 30 μm thick GaAs X-ray detector grown by MBE.