Engineering p-n junctions and bandgap tuning of InSe nanolayers by controlled oxidation
(2017)
Journal Article
Balakrishnan, N., Kudrynskyi, Z. R., Smith, E. F., Fay, M. W., Makarovsky, O., Kovalyuk, Z. D., Eaves, L., Beton, P. H., & Patanè, A. (2017). Engineering p-n junctions and bandgap tuning of InSe nanolayers by controlled oxidation. 2D Materials, 4(2), Article 025043. https://doi.org/10.1088/2053-1583/aa61e0
Exploitation of two-dimensional (2D) van der Waals (vdW) crystals can be hindered by the deterioration of the crystal surface over time due to oxidation. On the other hand, the existence of a stable oxide at room temperature can offer prospects for s... Read More about Engineering p-n junctions and bandgap tuning of InSe nanolayers by controlled oxidation.