Outputs (3)

Hexagonal Boron Nitride Tunnel Barriers Grown on Graphite by High Temperature Molecular Beam Epitaxy (2016)
Journal Article
Cho, Y.-J., Summerfield, A., Davies, A., Cheng, T. S., Smith, E. F., Mellor, C. J., Khlobystov, A. N., Foxon, C. T., Eaves, L., Beton, P. H., & Novikov, S. V. (2016). Hexagonal Boron Nitride Tunnel Barriers Grown on Graphite by High Temperature Molecular Beam Epitaxy. Scientific Reports, 6(1), Article 34474. https://doi.org/10.1038/srep34474

We demonstrate direct epitaxial growth of high-quality hexagonal boron nitride (hBN) layers on graphite using high-temperature plasma-assisted molecular beam epitaxy. Atomic force microscopy reveals mono- and few-layer island growth, while conducting... Read More about Hexagonal Boron Nitride Tunnel Barriers Grown on Graphite by High Temperature Molecular Beam Epitaxy.

Strain-Engineered Graphene Grown on Hexagonal Boron Nitride by Molecular Beam Epitaxy (2016)
Journal Article
Summerfield, A., Davies, A., Cheng, T. S., Korolkov, V. V., Cho, Y., Mellor, C. J., Foxon, C. T., Khlobystov, A. N., Watanabe, K., Taniguchi, T., Eaves, L., Novikov, S. V., & Beton, P. H. (2016). Strain-Engineered Graphene Grown on Hexagonal Boron Nitride by Molecular Beam Epitaxy. Scientific Reports, 6(1), Article 22440. https://doi.org/10.1038/srep22440

Graphene grown by high temperature molecular beam epitaxy on hexagonal boron nitride (hBN) forms continuous domains with dimensions of order 20 μm, and exhibits moiré patterns with large periodicities, up to ~30 nm, indicating that the layers are hig... Read More about Strain-Engineered Graphene Grown on Hexagonal Boron Nitride by Molecular Beam Epitaxy.

High temperature MBE of graphene on sapphire and hexagonal boron nitride flakes on sapphire (2016)
Journal Article
Cheng, T. S., Davies, A., Summerfield, A., Cho, Y., Cebula, I., Hill, R. J., Mellor, C. J., Khlobystov, A. N., Taniguchi, T., Watanabe, K., Beton, P. H., Foxon, C. T., Eaves, L., & Novikov, S. V. (2016). High temperature MBE of graphene on sapphire and hexagonal boron nitride flakes on sapphire. Journal of Vacuum Science and Technology B, 34(2), 02L101. https://doi.org/10.1116/1.4938157

The discovery of graphene and its remarkable electronic properties has provided scientists with a revolutionary material system for electronics and optoelectronics. Here, the authors investigate molecular beam epitaxy (MBE) as a growth method for gra... Read More about High temperature MBE of graphene on sapphire and hexagonal boron nitride flakes on sapphire.