Outputs (5)

Optical detection and spatial modulation of mid-infrared surface plasmon polaritons in a highly doped semiconductor (2017)
Journal Article
Di Paola, D., Velichko, A. V., Bomers, M., Balakrishnan, N., Makarovsky, O., Capizzi, M., Cerutti, L., Baranov, A. N., Kesaria, M., Krier, A., Taliercio, T., & Patanè, A. (2018). Optical detection and spatial modulation of mid-infrared surface plasmon polaritons in a highly doped semiconductor. Advanced Optical Materials, 6(3), Article 1700492. https://doi.org/10.1002/adom.201700492

Highly doped semiconductors (HDSCs) are promising candidates for plasmonic applications in the mid-infrared (MIR) spectral range. This work examines a recent addition to the HDSC family, the dilute nitride alloy In(AsN). Post-growth hydrogenation of... Read More about Optical detection and spatial modulation of mid-infrared surface plasmon polaritons in a highly doped semiconductor.

Giant Quantum Hall Plateau in Graphene Coupled to an InSe van der Waals Crystal (2017)
Journal Article
Kudrynskyi, Z. R., Bhuiyan, M. A., Makarovsky, O., Greener, J. D., Vdovin, E. E., Kovalyuk, Z. D., Cao, Y., Mishchenko, A., Novoselov, K. S., Beton, P. H., Eaves, L., & Patanè, A. (2017). Giant Quantum Hall Plateau in Graphene Coupled to an InSe van der Waals Crystal. Physical Review Letters, 119(15), Article 157701. https://doi.org/10.1103/PhysRevLett.119.157701

© 2017 authors. Published by the American Physical Society. We report on a "giant" quantum Hall effect plateau in a graphene-based field-effect transistor where graphene is capped by a layer of the van der Waals crystal InSe. The giant quantum Hall e... Read More about Giant Quantum Hall Plateau in Graphene Coupled to an InSe van der Waals Crystal.

Fast, multicolor photodetection with graphene-contacted p-GaSe/n-InSe van der Waals heterostructures (2017)
Journal Article
Yan, F., Zhao, L., Patanè, A., Hu, P., Wei, X., Luo, W., Zhang, D., Lv, Q., Feng, Q., Shen, C., Chang, K., Eaves, L., & Wang, K. (2017). Fast, multicolor photodetection with graphene-contacted p-GaSe/n-InSe van der Waals heterostructures. Nanotechnology, 28(27), Article 27LT01. https://doi.org/10.1088/1361-6528/aa749e

The integration of different two-dimensional materials within a multilayer van der Waals (vdW) heterostructure offers a promising technology for high performance opto-electronic devices such as photodetectors and light sources. Here we report on the... Read More about Fast, multicolor photodetection with graphene-contacted p-GaSe/n-InSe van der Waals heterostructures.

Microwave Generation in Synchronized Semiconductor Superlattices (2017)
Journal Article
Gaifullin, M., Alexeeva, N., Hramov, A., Makarov, V., Maksimenko, V., Koronovskii, A., Greenaway, M., Fromhold, T., Patanè, A., Mellor, C. J., Kusmartsev, F., & Balanov, A. (2017). Microwave Generation in Synchronized Semiconductor Superlattices. Physical Review Applied, 7(4), Article 044024. https://doi.org/10.1103/PhysRevApplied.7.044024

We study high-frequency generation in a system of electromagnetically coupled semiconductor superlattices fabricated on the same doped substrate. Applying a bias voltage to a single superlattice generates high-frequency current oscillations. We demon... Read More about Microwave Generation in Synchronized Semiconductor Superlattices.

High-detectivity ultraviolet photodetectors based on laterally mesoporous GaN (2017)
Journal Article
Liu, L., Yang, C., Patanè, A., Yu, Z., Yan, F., Wang, K., Lu, H., Li, J., & Zhao, L. (2017). High-detectivity ultraviolet photodetectors based on laterally mesoporous GaN. Nanoscale, 24, https://doi.org/10.1039/c7nr01290j

Photodetectors for the ultraviolet (UV) range of the electromagnetic spectrum are in great demand for several technologies, but require the development of novel device structures and materials. Here we report on the high detectivity of UV photodetect... Read More about High-detectivity ultraviolet photodetectors based on laterally mesoporous GaN.