Laser drilling of micro-holes in single crystal silicon, indium phosphide and indium antimonide using a continuous wave (CW) 1070 nm fibre laser with millisecond pulse widths (2018)
Journal Article
Maclean, J. O., Tangkijcharoenchai, C., Coomber, S., & Voisey, K. T. (2018). Laser drilling of micro-holes in single crystal silicon, indium phosphide and indium antimonide using a continuous wave (CW) 1070 nm fibre laser with millisecond pulse widths. Procedia CIRP, 74, 407-412. https://doi.org/10.1016/j.procir.2018.08.158

The laser micro-drilling of “thru” holes, also known as via holes, in Si, InP and InSb semiconductor wafers was studied using millisecond pulse lengths from an IPG Laser Model YLR-2000 CW multimode 2 kW Ytterbium Fibre Laser and a JK400 (400 W) fibre... Read More about Laser drilling of micro-holes in single crystal silicon, indium phosphide and indium antimonide using a continuous wave (CW) 1070 nm fibre laser with millisecond pulse widths.