Outputs (6)

Reduce-Order Analysis and Circuit-Level Cost Function for the Numerical Optimization of Power Electronics Modules (2021)
Conference Proceeding
Cairnie, M., DiMarino, C., Evans, P., & Lophitis, N. (2021). Reduce-Order Analysis and Circuit-Level Cost Function for the Numerical Optimization of Power Electronics Modules. In 2021 IEEE 22nd Workshop on Control and Modelling of Power Electronics (COMPEL). https://doi.org/10.1109/compel52922.2021.9645944

Energy innovation trends such as sustainable grids, and the electrification of the consumer transportation market are accelerating the adoption of medium-voltage (MV) silicon-carbide (SiC) technology. The fast switching times and higher operating tem... Read More about Reduce-Order Analysis and Circuit-Level Cost Function for the Numerical Optimization of Power Electronics Modules.

Trench Floating Field Rings termination for 10kV+ rated SiC n-IGBTs (2021)
Presentation / Conference
Lophitis, N., Gammon, P. M., Renz, A. B., Dai, T., Tiwari, A., Trajkovic, T., …Antoniou, M. (2021, October). Trench Floating Field Rings termination for 10kV+ rated SiC n-IGBTs. Paper presented at The 13th European Conference on Silicon Carbide and Related Materials (ECSCRM 2020·2021), Tours, France

3C-SiC-on-Si MOSFETs: overcoming material technology limitations (2021)
Journal Article
Arvanitopoulos, A., Antoniou, M., Li, F., Jennings, M. R., Perkins, S., Gyftakis, K. N., & Lophitis, N. (2021). 3C-SiC-on-Si MOSFETs: overcoming material technology limitations. IEEE Transactions on Industry Applications, https://doi.org/10.1109/TIA.2021.3119269

The cubic polytype (3C-) of Silicon Carbide (SiC) is an emerging semiconductor technology for power devices. The featured isotropic material properties along with the Wide Band Gap (WBG) characteristics make it an excellent choice for power Metal Oxi... Read More about 3C-SiC-on-Si MOSFETs: overcoming material technology limitations.

Holistic Approach To Understanding Battery Degradation (2021)
Journal Article
Stocker, R., Mumtaz, A., & Lophitis, N. (2021). Holistic Approach To Understanding Battery Degradation. Engineering Integrity Journal, 51, 20-28

Li-ion cell degradation has a strong impact on electric vehicle performance both directly, through performance reduction, and indirectly through deviating behavior away from initial control system calibration. This necessitates a process for evaluati... Read More about Holistic Approach To Understanding Battery Degradation.

Experimental and physics based study of the Schottky Barrier Height inhomogeneity and associated traps affecting 3C-SiC-on-Si Schottky Barrier Diodes (2021)
Journal Article
Arvanitopoulos, A., Li, F., Jennings, M. R., Perkins, S., Gyftakis, K. N., Mawby, P., …Lophitis, N. (2021). Experimental and physics based study of the Schottky Barrier Height inhomogeneity and associated traps affecting 3C-SiC-on-Si Schottky Barrier Diodes. IEEE Transactions on Industry Applications, 57(5), 5252-5263. https://doi.org/10.1109/TIA.2021.3087667

The ability of cubic phase (3C-) Silicon Carbide (SiC) to grow heteroepitaxially on Silicon (Si) substrates (3C-SiC-on-Si) is an enabling feature for cost-effective Wide Bandgap devices and homogeneous integration with Si devices. In this paper, the... Read More about Experimental and physics based study of the Schottky Barrier Height inhomogeneity and associated traps affecting 3C-SiC-on-Si Schottky Barrier Diodes.

A semiconductor device and methods for production thereof (2021)
Patent
Lophitis, N., & Arvanitopoulos, A. (2021). A semiconductor device and methods for production thereof. WO2021/001645 A1

A method for producing a semiconductor device, which includes epitaxially forming a first layer of n-type conductivity on a substrate or on a previously epitaxially formed layer; epitaxially forming a body layer of p-type conductivity on the first la... Read More about A semiconductor device and methods for production thereof.