Optimal Gate Commutated Thyristor Design for Bi-Mode Gate Commutated Thyristors Underpinning High, Temperature Independent, Current Controllability
(2018)
Journal Article
Lophitis, N., Antoniou, M., Vemulapati, U., Vobecky, J., Badstuebner, U., Wikstroem, T., …Udrea, F. (2018). Optimal Gate Commutated Thyristor Design for Bi-Mode Gate Commutated Thyristors Underpinning High, Temperature Independent, Current Controllability. IEEE Electron Device Letters, 39(9), 1342-1345. https://doi.org/10.1109/LED.2018.2847050
The bi-mode gate commutated thyristor (GCT) is an advanced reverse conducting device aiming high-power applications. Due to the high degree of interdigitation of diode parts and GCT parts, it is necessary to investigate how to best separate the two a... Read More about Optimal Gate Commutated Thyristor Design for Bi-Mode Gate Commutated Thyristors Underpinning High, Temperature Independent, Current Controllability.