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Parameters influencing the maximum controllable current in gate commutated thyristors (2014)
Journal Article
Lophitis, N., Antoniou, M., Udrea, F., Nistor, I., Arnold, M., Wikstro?m, T., & Vobecky, J. (2014). Parameters influencing the maximum controllable current in gate commutated thyristors. IET Circuits, Devices and Systems, 8(3), 221--226. https://doi.org/10.1049/iet-cds.2013.0217

The model of interconnected numerical device segments can give a prediction on the dynamic performance of large area full wafer devices such as the Gate Commutated Thyristors (GCTs) and can be used as an optimisation tool for designing GCTs. In this... Read More about Parameters influencing the maximum controllable current in gate commutated thyristors.