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Outputs (3)

Holistic Approach To Understanding Battery Degradation (2021)
Journal Article
Stocker, R., Mumtaz, A., & Lophitis, N. (2021). Holistic Approach To Understanding Battery Degradation. Engineering Integrity Journal, 51, 20-28

Li-ion cell degradation has a strong impact on electric vehicle performance both directly, through performance reduction, and indirectly through deviating behavior away from initial control system calibration. This necessitates a process for evaluati... Read More about Holistic Approach To Understanding Battery Degradation.

Performance Improvement of >10kV SiC IGBTs with Retrograde p-Well (2019)
Conference Proceeding
Tiwari, A. K., Antoniou, M., Lophitis, N., Perkins, S., Trajkovic, T., Trajkovic, T., & Udrea, F. (2019). Performance Improvement of >10kV SiC IGBTs with Retrograde p-Well. In P. M. Gammon, V. A. Shah, R. A. McMahon, M. R. Jennings, O. Vavasour, P. A. Mawby, & F. Padfield (Eds.), Proceedings of 12th European Conference on Silicon Carbide and Related Materials (ECSCRM 2018) (639-642). https://doi.org/10.4028/www.scientific.net/MSF.963.639

A p-well consisting of a retrograde doping profile is investigated for performance improvement of >10kV SiC IGBTs. The retrograde p-well, which can be realized using low-energy shallow implants, effectively addresses the punch-through, a common issue... Read More about Performance Improvement of >10kV SiC IGBTs with Retrograde p-Well.

Novel Approach Toward Plasma Enhancement in Trench-Insulated Gate Bipolar Transistors (2015)
Journal Article
Antoniou, M., Lophitis, N., Bauer, F., Nistor, I., Bellini, M., Rahimo, M., …Udrea, F. (2015). Novel Approach Toward Plasma Enhancement in Trench-Insulated Gate Bipolar Transistors. IEEE Electron Device Letters, 36(8), 823-825. https://doi.org/10.1109/LED.2015.2433894

In this letter, a trench-insulated gate bipolar transistor (IGBT) design with local charge compensating layers featured at the cathode of the device is presented and analyzed. The superjunction or reduced surface effect proves to be very effective in... Read More about Novel Approach Toward Plasma Enhancement in Trench-Insulated Gate Bipolar Transistors.