The p-ring Trench Schottky IGBT: A solution towards latch-up immunity and an enhanced safe-operating area
(2020)
Conference Proceeding
Antoniou, M., Lophitis, N., Udrea, F., Corvasce, C., & De-Michielis, L. (2020). The p-ring Trench Schottky IGBT: A solution towards latch-up immunity and an enhanced safe-operating area. In Proceedings - 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD) (134-137). https://doi.org/10.1109/ISPSD46842.2020.9170084
© 2020 IEEE. A novel Trench IGBT design, namely the p-ring Trench Schottky IGBT, with improved latch-up immunity and an enhanced safe-operating area is proposed. This design improves the performance of the FS+ IGBT by facilitating the collection of h... Read More about The p-ring Trench Schottky IGBT: A solution towards latch-up immunity and an enhanced safe-operating area.