On the 3C-SiC/SiO2 n-MOS interface and the creation of a calibrated model for the Electrons' Inversion Layer Mobility covering a wide range of operating temperatures and applied gate voltage
(2022)
Conference Proceeding
Lophitis, N., Arvanitopoulos, A., Jennings, M. R., Mawby, P. A., & Antoniou, M. (2022). On the 3C-SiC/SiO2 n-MOS interface and the creation of a calibrated model for the Electrons' Inversion Layer Mobility covering a wide range of operating temperatures and applied gate voltage. In 2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe). https://doi.org/10.1109/WiPDAEurope55971.2022.9936319
Cubic (3C-) silicon carbide (SiC) metal oxide semiconductor (MOS) devices have the potential to achieve superior performance and reliability. The effective channel mobility can be significantly higher compared to other SiC polytypes due to the smalle... Read More about On the 3C-SiC/SiO2 n-MOS interface and the creation of a calibrated model for the Electrons' Inversion Layer Mobility covering a wide range of operating temperatures and applied gate voltage.