Outputs (15)

On the 3C-SiC/SiO2 n-MOS interface and the creation of a calibrated model for the Electrons' Inversion Layer Mobility covering a wide range of operating temperatures and applied gate voltage (2022)
Conference Proceeding
Lophitis, N., Arvanitopoulos, A., Jennings, M. R., Mawby, P. A., & Antoniou, M. (2022). On the 3C-SiC/SiO2 n-MOS interface and the creation of a calibrated model for the Electrons' Inversion Layer Mobility covering a wide range of operating temperatures and applied gate voltage. In 2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe). https://doi.org/10.1109/WiPDAEurope55971.2022.9936319

Cubic (3C-) silicon carbide (SiC) metal oxide semiconductor (MOS) devices have the potential to achieve superior performance and reliability. The effective channel mobility can be significantly higher compared to other SiC polytypes due to the smalle... Read More about On the 3C-SiC/SiO2 n-MOS interface and the creation of a calibrated model for the Electrons' Inversion Layer Mobility covering a wide range of operating temperatures and applied gate voltage.

Influence of Emitter Side Design on the Unintentional Turn-on of 10kV+ SiC n-IGBTs (2022)
Conference Proceeding
Almpanis, I., Antoniou, M., Evans, P., Empringham, L., Gammon, P., Udrea, F., …Lophitis, N. (2022). Influence of Emitter Side Design on the Unintentional Turn-on of 10kV+ SiC n-IGBTs. In 2022 IEEE Energy Conversion Congress and Exposition (ECCE). https://doi.org/10.1109/ecce50734.2022.9947492

Silicon Carbide (SiC) N-channel Insulated Gate Bipolar Transistors (n-IGBTs) rated higher than 10kV can improve Medium Voltage and High Voltage power electronics due to the favourable combination of SiC material with the nIGBT device structure. This... Read More about Influence of Emitter Side Design on the Unintentional Turn-on of 10kV+ SiC n-IGBTs.

Short-Circuit Performance Investigation of 10kV+ Rated SiC n-IGBT (2022)
Conference Proceeding
Almpanis, I., Gammon, P., Mawby, P., Evans, P., Empringham, L., Lophitis, N., …Udrea, F. (2022). Short-Circuit Performance Investigation of 10kV+ Rated SiC n-IGBT. In IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA-Europe). https://doi.org/10.1109/WiPDAEurope55971.2022.9936475

This paper presents a comprehensive short-circuit robustness investigation of 4H- Silicon Carbide (SiC) n-type Insulated Gate Bipolar Transistors (nIGBTs) for Medium-Voltage and High- Voltage applications. Numerical electrothermal TCAD simulations ev... Read More about Short-Circuit Performance Investigation of 10kV+ Rated SiC n-IGBT.

On the 3C-SiC/SiO 2 n-MOS interface and the creation of a calibrated model for the Electrons' Inversion Layer Mobility covering a wide range of operating temperatures and applied gate voltage (2022)
Conference Proceeding
Lophitis, N., Arvanitopoulos, A., Jennings, M. R., Mawby, P. A., & Antoniou, M. (2022). On the 3C-SiC/SiO 2 n-MOS interface and the creation of a calibrated model for the Electrons' Inversion Layer Mobility covering a wide range of operating temperatures and applied gate voltage. . https://doi.org/10.1109/WiPDAEurope55971.2022.9936319

Cubic (3C-) silicon carbide (SiC) metal oxide semiconductor (MOS) devices have the potential to achieve superior performance and reliability. The effective channel mobility can be significantly higher compared to other SiC polytypes due to the smalle... Read More about On the 3C-SiC/SiO 2 n-MOS interface and the creation of a calibrated model for the Electrons' Inversion Layer Mobility covering a wide range of operating temperatures and applied gate voltage.

The optimisation of a 15 kV 4H-silicon carbide integrated gate commutated thyristor (2022)
Conference Proceeding
Cao, Q., Gammon, P. M., Renz, A. B., Zhang, L., Baker, G., Antoniou, M., & Lophitis, N. (2022). The optimisation of a 15 kV 4H-silicon carbide integrated gate commutated thyristor. In 2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe). https://doi.org/10.1109/WiPDAEurope55971.2022.9936508

A 15kV SiC thyristor is analysed, considering for the first time the design properties that will ensure the safe, stable operation of the device as an integrated gate commutated thyristor (IGCT), while also minimizing its on-state losses. Key to the... Read More about The optimisation of a 15 kV 4H-silicon carbide integrated gate commutated thyristor.

An experimentally driven assessment of the dynamic-on resistance in correlation to other performance indicators in commercial Gallium Nitride power devices (2022)
Conference Proceeding
Lophitis, N., Perkins, S., Arvanitopoulos, A., Faramehr, S., & Igic, P. (2022). An experimentally driven assessment of the dynamic-on resistance in correlation to other performance indicators in commercial Gallium Nitride power devices. In 2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe). https://doi.org/10.1109/WiPDAEurope55971.2022.9936253

This work provides an experimentally driven performance comparison of commercial Gallium Nitride on Silicon (GaN-on-Si) power devices rated 600-650V at room and elevated temperatures with the focus being in assessing the on resistance (RON) increase... Read More about An experimentally driven assessment of the dynamic-on resistance in correlation to other performance indicators in commercial Gallium Nitride power devices.

Reduce-Order Analysis and Circuit-Level Cost Function for the Numerical Optimization of Power Electronics Modules (2021)
Conference Proceeding
Cairnie, M., DiMarino, C., Evans, P., & Lophitis, N. (2021). Reduce-Order Analysis and Circuit-Level Cost Function for the Numerical Optimization of Power Electronics Modules. In 2021 IEEE 22nd Workshop on Control and Modelling of Power Electronics (COMPEL). https://doi.org/10.1109/compel52922.2021.9645944

Energy innovation trends such as sustainable grids, and the electrification of the consumer transportation market are accelerating the adoption of medium-voltage (MV) silicon-carbide (SiC) technology. The fast switching times and higher operating tem... Read More about Reduce-Order Analysis and Circuit-Level Cost Function for the Numerical Optimization of Power Electronics Modules.

The p-ring Trench Schottky IGBT: A solution towards latch-up immunity and an enhanced safe-operating area (2020)
Conference Proceeding
Antoniou, M., Lophitis, N., Udrea, F., Corvasce, C., & De-Michielis, L. (2020). The p-ring Trench Schottky IGBT: A solution towards latch-up immunity and an enhanced safe-operating area. In Proceedings - 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD) (134-137). https://doi.org/10.1109/ISPSD46842.2020.9170084

© 2020 IEEE. A novel Trench IGBT design, namely the p-ring Trench Schottky IGBT, with improved latch-up immunity and an enhanced safe-operating area is proposed. This design improves the performance of the FS+ IGBT by facilitating the collection of h... Read More about The p-ring Trench Schottky IGBT: A solution towards latch-up immunity and an enhanced safe-operating area.

Integrated Gate Commutated Thyristor: From Trench to Planar (2020)
Conference Proceeding
Vemulapati, U., Stiasny, T., Wikström, T., Lophitis, N., & Udrea, F. (2020). Integrated Gate Commutated Thyristor: From Trench to Planar. In Proceedings - 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD) (490-493). https://doi.org/10.1109/ISPSD46842.2020.9170102

© 2020 IEEE. The planar Integrated Gate Commutated Thyristor (IGCT) concept is proposed to simplify the fabrication process of the device and improve the ruggedness as well as electrothermal performance of the device. The planar IGCT concept has been... Read More about Integrated Gate Commutated Thyristor: From Trench to Planar.

Design-of-Experiments Analysis of Li-Ion Cell Capacity Fading in High Temperature Automotive Conditions (2019)
Conference Proceeding
Stocker, R., Mumtaz, A., & Lophitis, N. (2019). Design-of-Experiments Analysis of Li-Ion Cell Capacity Fading in High Temperature Automotive Conditions. In 2019 Electric Vehicles International Conference (EV) (1-6). https://doi.org/10.1109/EV.2019.8893026

This paper examines the evolution of performance degradation through capacity fade in Li-ion cells when subjected to 8 months of automotive drive cycles in high temperature conditions. This is done by combining a temperature controlled, highly transi... Read More about Design-of-Experiments Analysis of Li-Ion Cell Capacity Fading in High Temperature Automotive Conditions.

Experimental Investigation and Verification of Traps affecting the performance of 3C-SiC-on-Si Schottky Barrier Diodes (2019)
Conference Proceeding
Arvanitopoulos, A., Li, F., Jennings, M. R., Perkins, S., Gyftakis, K. N., Antoniou, M., …Lophitis, N. (2019). Experimental Investigation and Verification of Traps affecting the performance of 3C-SiC-on-Si Schottky Barrier Diodes. In ECCE 2019: IEEE Energy Conversion Congress and Expo (1941-1947). https://doi.org/10.1109/ECCE.2019.8912232

Monolithic integration of wide bandgap (WBG) devices for power integrated circuits is currently of increased interest. The ability of the cubic phase (3C-) of Silicon Carbide (SiC) to grow heteroepitaxially on Silicon (Si) substrates (3C- SiC-on-Si)... Read More about Experimental Investigation and Verification of Traps affecting the performance of 3C-SiC-on-Si Schottky Barrier Diodes.

Frequency Extraction of Current Signal Spectral Components: A New Tool for the Detection of Rotor Electrical Faults in Induction Motors (2019)
Conference Proceeding
Panagiotou, P. A., Arvanitakis, I., Lophitis, N., & Gyftakis, K. N. (2019). Frequency Extraction of Current Signal Spectral Components: A New Tool for the Detection of Rotor Electrical Faults in Induction Motors. In Proceedings of the 2019 IEEE 12th International Symposium on Diagnostics for Electrical Machines, Power Electronics and Drives (SDEMPED) (290-296). https://doi.org/10.1109/DEMPED.2019.8864893

This work expands the classical current signature analysis in induction machines in a two-stage spectral decomposition manner. The proposed methodology can be summarized in two main steps: initially, the current signals are analyzed using a time freq... Read More about Frequency Extraction of Current Signal Spectral Components: A New Tool for the Detection of Rotor Electrical Faults in Induction Motors.

On the robustness of ultra-high voltage 4H-SiC IGBTs with an optimized retrograde p-well (2019)
Conference Proceeding
Tiwari, A. K., Perkins, S., Lophitis, N., Antoniou, M., Trajkovic, T., & Udrea, F. (2019). On the robustness of ultra-high voltage 4H-SiC IGBTs with an optimized retrograde p-well. In Proceedings of the 2019 IEEE 12th International Symposium on Diagnostics for Electrical Machines, Power Electronics and Drives (SDEMPED) (351-357). https://doi.org/10.1109/DEMPED.2019.8864804

The robustness of ultra-high voltage (>10kV) SiC IGBTs comprising of an optimized retrograde p-well is investigated. Under extensive TCAD simulations, we show that in addition to offering a robust control on threshold voltage and eliminating punch-th... Read More about On the robustness of ultra-high voltage 4H-SiC IGBTs with an optimized retrograde p-well.

Viable 3C-SiC-on-Si MOSFET design disrupting current Material Technology Limitations (2019)
Conference Proceeding
Arvanitopoulos, A., Antoniou, M., Li, F., Jennings, M. R., Perkins, S., Gyftakis, K. N., & Lophitis, N. (2019). Viable 3C-SiC-on-Si MOSFET design disrupting current Material Technology Limitations. In Proceedings of the 2019 IEEE 12th International Symposium on Diagnostics for Electrical Machines, Power Electronics and Drives (SDEMPED) (364 -370). https://doi.org/10.1109/DEMPED.2019.8864910

The cubic polytype (3C-) of Silicon Carbide (SiC) is an emerging semiconductor technology for power devices. The featured isotropic material properties along with the Wide Band Gap (WBG) characteristics make it an excellent choice for power Metal Oxi... Read More about Viable 3C-SiC-on-Si MOSFET design disrupting current Material Technology Limitations.

Performance Improvement of >10kV SiC IGBTs with Retrograde p-Well (2019)
Conference Proceeding
Tiwari, A. K., Antoniou, M., Lophitis, N., Perkins, S., Trajkovic, T., Trajkovic, T., & Udrea, F. (2019). Performance Improvement of >10kV SiC IGBTs with Retrograde p-Well. In P. M. Gammon, V. A. Shah, R. A. McMahon, M. R. Jennings, O. Vavasour, P. A. Mawby, & F. Padfield (Eds.), Proceedings of 12th European Conference on Silicon Carbide and Related Materials (ECSCRM 2018) (639-642). https://doi.org/10.4028/www.scientific.net/MSF.963.639

A p-well consisting of a retrograde doping profile is investigated for performance improvement of >10kV SiC IGBTs. The retrograde p-well, which can be realized using low-energy shallow implants, effectively addresses the punch-through, a common issue... Read More about Performance Improvement of >10kV SiC IGBTs with Retrograde p-Well.