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Thermally stable quantum Hall effect in a gated ferroelectric-graphene heterostructure (2023)
Journal Article
Dey, A., Cottam, N., Makarovskiy, O., Yan, W., Mišeikis, V., Coletti, C., …Patanè, A. (2023). Thermally stable quantum Hall effect in a gated ferroelectric-graphene heterostructure. Communications Physics, 6, Article 216. https://doi.org/10.1038/s42005-023-01340-8

The quantum Hall effect is widely used for the investigation of fundamental phenomena, ranging from topological phases to composite fermions. In particular, the discovery of a room temperature resistance quantum in graphene is significant for compact... Read More about Thermally stable quantum Hall effect in a gated ferroelectric-graphene heterostructure.

A magnetically-induced Coulomb gap in graphene due to electron-electron interactions (2023)
Journal Article
Vdovin, E. E., Greenaway, M. T., Khanin, Y. N., Morozov, S. V., Makarovsky, O., Patanè, A., …Eaves, L. (2023). A magnetically-induced Coulomb gap in graphene due to electron-electron interactions. Communications Physics, 6, Article 159. https://doi.org/10.1038/s42005-023-01277-y

Insights into the fundamental properties of graphene’s Dirac-Weyl fermions have emerged from studies of electron tunnelling transistors in which an atomically thin layer of hexagonal boron nitride (hBN) is sandwiched between two layers of high purity... Read More about A magnetically-induced Coulomb gap in graphene due to electron-electron interactions.

Graphene FETs with high and low mobilities have universal temperature-dependent properties (2023)
Journal Article
Gosling, J., Morozov, S. V., Vdovin, E. E., Greenaway, M. T., Khanin, Y. N., Kudrynskyi, Z., …Makarovsky, O. (2023). Graphene FETs with high and low mobilities have universal temperature-dependent properties. Nanotechnology, 34(12), Article 125702. https://doi.org/10.1088/1361-6528/aca981

We use phenomenological modelling and detailed experimental studies of charge carrier transport to investigate the dependence of the electrical resistivity,ρ, on gate voltage,Vg, for a series of monolayer graphene field effect transistors with mobili... Read More about Graphene FETs with high and low mobilities have universal temperature-dependent properties.

Exciton and Phonon Radiative Linewidths in Monolayer Boron Nitride (2022)
Journal Article
Cassabois, G., Fugallo, G., Elias, C., Valvin, P., Rousseau, A., Gil, B., …Novikov, S. (2022). Exciton and Phonon Radiative Linewidths in Monolayer Boron Nitride. Physical Review X, 12(1), Article 011057. https://doi.org/10.1103/physrevx.12.011057

The light-matter interaction in bulk semiconductors is in the strong coupling regime with hybrid eigenstates, the so-called exciton-polaritons and phonon-polaritons. In two-dimensional (2D) systems, the translational invariance is broken in the direc... Read More about Exciton and Phonon Radiative Linewidths in Monolayer Boron Nitride.

Exciton and Phonon Radiative Linewidths in Monolayer Boron Nitride (2022)
Journal Article
Cassabois, G., Fugallo, G., Elias, C., Valvin, P., Rousseau, A., Gil, B., …Novikov, S. (2022). Exciton and Phonon Radiative Linewidths in Monolayer Boron Nitride. Physical Review X, 12(1), Article 011057. https://doi.org/10.1103/PhysRevX.12.011057

The light-matter interaction in bulk semiconductors is in the strong-coupling regime with hybrid eigenstates, the so-called exciton polaritons and phonon polaritons. In two-dimensional (2D) systems, the translational invariance is broken in the direc... Read More about Exciton and Phonon Radiative Linewidths in Monolayer Boron Nitride.

Graphene’s non-equilibrium fermions reveal Doppler-shifted magnetophonon resonances accompanied by Mach supersonic and Landau velocity effects (2021)
Journal Article
Greenaway, M. T., Kumaravadivel, P., Wengraf, J., Ponomarenko, L. A., Berdyugin, A. I., Li, J., …Eaves, L. (2021). Graphene’s non-equilibrium fermions reveal Doppler-shifted magnetophonon resonances accompanied by Mach supersonic and Landau velocity effects. Nature Communications, 12, 1-6. https://doi.org/10.1038/s41467-021-26663-4

Oscillatory magnetoresistance measurements on graphene have revealed a wealth of novel physics. These phenomena are typically studied at low currents. At high currents, electrons are driven far from equilibrium with the atomic lattice vibrations so t... Read More about Graphene’s non-equilibrium fermions reveal Doppler-shifted magnetophonon resonances accompanied by Mach supersonic and Landau velocity effects.

Heavy carrier effective masses in van der Waals semiconductor Sn(SeS) revealed by high magnetic fields up to 150 T (2021)
Journal Article
Yang, Z., Wang, X., Felton, J., Kudrynskyi, Z., Gen, M., Nomura, T., …Patanè, A. (2021). Heavy carrier effective masses in van der Waals semiconductor Sn(SeS) revealed by high magnetic fields up to 150 T. Physical Review B (Condensed Matter), 104(8), Article 085206. https://doi.org/10.1103/PhysRevB.104.085206

The SnSe2(1-x)S2x alloy is a van der Waals semiconductor with versatile, tunable electronic properties and prospects for future applications ranging from electronics to thermoelectrics and superconductivity. Its band structure and carrier effective m... Read More about Heavy carrier effective masses in van der Waals semiconductor Sn(SeS) revealed by high magnetic fields up to 150 T.

Epitaxy of boron nitride monolayers for graphene-based lateral heterostructures (2021)
Journal Article
Wrigley, J., Bradford, J., James, T., Cheng, T. S., Thomas, J., Mellor, C. J., …Beton, P. H. (2021). Epitaxy of boron nitride monolayers for graphene-based lateral heterostructures. 2D Materials, 8(3), 1-10. https://doi.org/10.1088/2053-1583/abea66

Monolayers of hexagonal boron nitride (hBN) are grown on graphite substrates using high-temperature molecular beam epitaxy (HT-MBE). The hBN monolayers are observed to grow predominantly from step edges on the graphite surface and exhibit a strong de... Read More about Epitaxy of boron nitride monolayers for graphene-based lateral heterostructures.

Step-Flow Growth of Graphene-Boron Nitride Lateral Heterostructures by Molecular Beam Epitaxy (2020)
Journal Article
Thomas, J., Bradford, J., Cheng, T. S., Summerfield, A., Wrigley, J., Mellor, C. J., …Beton, P. H. (2020). Step-Flow Growth of Graphene-Boron Nitride Lateral Heterostructures by Molecular Beam Epitaxy. 2D Materials, 7(3), Article 035014. https://doi.org/10.1088/2053-1583/ab89e7

Integration of graphene and hexagonal boron nitride (hBN) into lateral heterostructures has drawn focus due to the ability to broadly engineer the material properties. Hybrid monolayers with tuneable bandgaps have been reported, while the interface i... Read More about Step-Flow Growth of Graphene-Boron Nitride Lateral Heterostructures by Molecular Beam Epitaxy.

Van der Waals SnSe2(1-x)S2x alloys: composition-dependent bowing coefficient and electron-phonon interaction (2020)
Journal Article
Kudrynskyi, Z. R., Wang, X., Sutcliffe, J., Bhuiyan, M. A., Fu, Y., Yang, Z., …Patanè, A. (2020). Van der Waals SnSe2(1-x)S2x alloys: composition-dependent bowing coefficient and electron-phonon interaction. Advanced Functional Materials, 30(9), Article 1908092. https://doi.org/10.1002/adfm.201908092

The design of advanced functional materials with customized properties often requires the use of an alloy. This approach has been used for decades, but only recently to create van der Waals (vdW) alloys for applications in electronics, optoelectronic... Read More about Van der Waals SnSe2(1-x)S2x alloys: composition-dependent bowing coefficient and electron-phonon interaction.

Defect-assisted high photoconductive UV-VIS gain in perovskite-decorated graphene transistors (2019)
Journal Article
Cottam, N. D., Zhang, C., Turyanska, L., Eaves, L., Kudrynskyi, Z., Vdovin, E. E., …Makarovsky, O. (2020). Defect-assisted high photoconductive UV-VIS gain in perovskite-decorated graphene transistors. ACS Applied Electronic Materials, 2, 147-154. https://doi.org/10.1021/acsaelm.9b00664

Recent progress in the synthesis of high stability inorganic perovskite nanocrystals (NCs) has led to their increasing use in broadband photodetectors. These NCs are of particular interest for the UV range as they have the potential to extend the wav... Read More about Defect-assisted high photoconductive UV-VIS gain in perovskite-decorated graphene transistors.

Magnetophonon spectroscopy of Dirac fermion scattering by transverse and longitudinal acoustic phonons in graphene (2019)
Journal Article
Greenaway, M. T., Krishna Kumar, R., Kumaravadivel, P., Geim, A. K., & Eaves, L. (2019). Magnetophonon spectroscopy of Dirac fermion scattering by transverse and longitudinal acoustic phonons in graphene. Physical Review B, 100(15), Article 155120. https://doi.org/10.1103/physrevb.100.155120

Recently observed magnetophonon resonances in the magnetoresistance of graphene are investigated using the Kubo formalism. This analysis provides a quantitative fit to the magnetophonon resonances over a wide range of carrier densities. It demonstrat... Read More about Magnetophonon spectroscopy of Dirac fermion scattering by transverse and longitudinal acoustic phonons in graphene.

Two-Dimensional Covalent Crystals by Chemical Conversion of Thin van der Waals Materials (2019)
Journal Article
Sreepal, V., Yagmurcukardes, M., Vasu, K. S., Kelly, D. J., Taylor, S. F. R., Kravets, V. G., …Nair, R. R. (2019). Two-Dimensional Covalent Crystals by Chemical Conversion of Thin van der Waals Materials. Nano Letters, 19(9), 6475-6481. https://doi.org/10.1021/acs.nanolett.9b02700

Most of the studied two-dimensional (2D) materials have been obtained by exfoliation of van der Waals crystals. Recently, there has been growing interest in fabricating synthetic 2D crystals which have no layered bulk analogues. These efforts have be... Read More about Two-Dimensional Covalent Crystals by Chemical Conversion of Thin van der Waals Materials.

Strong magnetophonon oscillations in extra-large graphene (2019)
Journal Article
Kumaravadivel, P., Greenaway, M. T., Perello, D., Berdyugin, A., Birkbeck, J., Wengraf, J., …Krishna Kumar, R. (2019). Strong magnetophonon oscillations in extra-large graphene. Nature Communications, 10(1), Article 3334. https://doi.org/10.1038/s41467-019-11379-3

Van der Waals materials and their heterostructures offer a versatile platform for studying a variety of quantum transport phenomena due to their unique crystalline properties and the exceptional ability in tuning their electronic spectrum. However, m... Read More about Strong magnetophonon oscillations in extra-large graphene.

Tunnel spectroscopy of localised electronic states in hexagonal boron nitride (2018)
Journal Article
Patanè, A., Mishchenko, A., Greenaway, M., Vdovin, E., Ghazaryan, D., Misra, A., …Eaves, L. (2018). Tunnel spectroscopy of localised electronic states in hexagonal boron nitride. Communications Physics, 1(1), Article 94. https://doi.org/10.1038/s42005-018-0097-1

Hexagonal boron nitride is a large band gap layered crystal, frequently incorporated in van der Waals heterostructures as an insulating or tunnel barrier. Localised states with energies within its band gap can emit visible light, relevant to applicat... Read More about Tunnel spectroscopy of localised electronic states in hexagonal boron nitride.

Photo-quantum Hall effect and light-induced charge transfer at the interface of graphene/InSe heterostructures (2018)
Journal Article
Bhuiyan, M. A., Kudrynskyi, Z. R., Mazumder, D., Greener, J. D., Makarovsky, O., Mellor, C. J., …Patanè, A. (2019). Photo-quantum Hall effect and light-induced charge transfer at the interface of graphene/InSe heterostructures. Advanced Functional Materials, 29(3), Article 1805491. https://doi.org/10.1002/adfm.201805491

The transfer of electronic charge across the interface of two van der Waals crystals can underpin the operation of a new class of functional devices. Amongst van der Waals semiconductors, an exciting and rapidly growing development involves the “post... Read More about Photo-quantum Hall effect and light-induced charge transfer at the interface of graphene/InSe heterostructures.

Magnon-assisted tunnelling in van der Waals heterostructures based on CrBr3 (2018)
Journal Article
Ghazaryan, D., Greenaway, M., Wang, Z., Guarochico-Moreira, V., Vera-Marun, I., Yin, J., …Misra, A. (2018). Magnon-assisted tunnelling in van der Waals heterostructures based on CrBr3. Nature Electronics, 1(6), https://doi.org/10.1038/s41928-018-0087-z

Van der Waals heterostructures, which are composed of layered two-dimensional materials, offer a platform to investigate a diverse range of physical phenomena and could be of use in a variety of applications. Heterostructures containing two-dimension... Read More about Magnon-assisted tunnelling in van der Waals heterostructures based on CrBr3.

High-order fractal states in graphene superlattices (2018)
Journal Article
Krishna Kumar, R., Mishchenko, A., Chen, X., Pezzini, S., Auton, G., Ponomarenko, L., …Geim, A. (2018). High-order fractal states in graphene superlattices. Proceedings of the National Academy of Sciences, 115(20), https://doi.org/10.1073/pnas.1804572115

Graphene superlattices were shown to exhibit high-temperature quantum oscillations due to periodic emergence of delocalized Bloch states in high magnetic fields such that unit fractions of the flux quantum pierce a superlattice unit cell. Under these... Read More about High-order fractal states in graphene superlattices.

Giant Quantum Hall Plateau in Graphene Coupled to an InSe van der Waals Crystal (2017)
Journal Article
Kudrynskyi, Z. R., Bhuiyan, M. A., Makarovsky, O., Greener, J. D., Vdovin, E. E., Kovalyuk, Z. D., …Patanè, A. (2017). Giant Quantum Hall Plateau in Graphene Coupled to an InSe van der Waals Crystal. Physical Review Letters, 119(15), Article 157701. https://doi.org/10.1103/PhysRevLett.119.157701

© 2017 authors. Published by the American Physical Society. We report on a "giant" quantum Hall effect plateau in a graphene-based field-effect transistor where graphene is capped by a layer of the van der Waals crystal InSe. The giant quantum Hall e... Read More about Giant Quantum Hall Plateau in Graphene Coupled to an InSe van der Waals Crystal.

High-temperature quantum oscillations caused by recurring Bloch states in graphene superlattices (2017)
Journal Article
Krishna Kumar, R. K., Chen, X., Auton, G., Mishchenko, A., Bandurin, D. A., Morozov, S., …Geim, A. (2017). High-temperature quantum oscillations caused by recurring Bloch states in graphene superlattices. Science, 357(6347), 181-184. https://doi.org/10.1126/science.aal3357

Cyclotron motion of charge carriers in metals and semiconductors leads to Landau quantization and magneto-oscillatory behavior in their properties. Cryogenic temperatures are usually required to observe these oscillations. We show that graphene super... Read More about High-temperature quantum oscillations caused by recurring Bloch states in graphene superlattices.

Enhancing optoelectronic properties of SiC-grown graphene by a surface layer of colloidal quantum dots (2017)
Journal Article
Makarovsky, O., Turyanska, L., Mori, N., Greenaway, M., Eaves, L., Patanè, A., …Yakimova, R. (in press). Enhancing optoelectronic properties of SiC-grown graphene by a surface layer of colloidal quantum dots. 2D Materials, 4(3), https://doi.org/10.1088/2053-1583/aa76bb

We report a simultaneous increase of carrier concentration, mobility and photoresponsivity when SiC-grown graphene is decorated with a surface layer of colloidal PbS quantum dots, which act as electron donors. The charge on the ionised dots is spatia... Read More about Enhancing optoelectronic properties of SiC-grown graphene by a surface layer of colloidal quantum dots.

Fast, multicolor photodetection with graphene-contacted p-GaSe/n-InSe van der Waals heterostructures (2017)
Journal Article
Yan, F., Zhao, L., Patanè, A., Hu, P., Wei, X., Luo, W., …Wang, K. (2017). Fast, multicolor photodetection with graphene-contacted p-GaSe/n-InSe van der Waals heterostructures. Nanotechnology, 28(27), Article 27LT01. https://doi.org/10.1088/1361-6528/aa749e

The integration of different two-dimensional materials within a multilayer van der Waals (vdW) heterostructure offers a promising technology for high performance opto-electronic devices such as photodetectors and light sources. Here we report on the... Read More about Fast, multicolor photodetection with graphene-contacted p-GaSe/n-InSe van der Waals heterostructures.

Mobility enhancement of CVD graphene by spatially correlated charges (2017)
Journal Article
Turyanska, L., Makarovsky, O., Eaves, L., Patanè, A., & Mori, N. (2017). Mobility enhancement of CVD graphene by spatially correlated charges. 2D Materials, 4(2), Article 025026. https://doi.org/10.1088/2053-1583/aa55b4

The manuscript presents a strategy for enhancing the carrier mobility of single layer CVD graphene (CVD SLG) based on spatially correlated charges. Our Monte Carlo simulations, numerical modeling and the experimental results confirm that spatial corr... Read More about Mobility enhancement of CVD graphene by spatially correlated charges.

The direct-to-indirect band gap crossover in two-dimensional van der Waals Indium Selenide crystals (2016)
Journal Article
Mudd, G., Molas, M., Chen, X., Zólyomi, V., Nogajewski, K., Kudrynskyi, Z. R., …Patanè, A. (2016). The direct-to-indirect band gap crossover in two-dimensional van der Waals Indium Selenide crystals. Scientific Reports, 6(1), Article 39619. https://doi.org/10.1038/srep39619

The electronic band structure of van der Waals (vdW) layered crystals has properties that depend on the composition, thickness and stacking of the component layers. Here we use density functional theory and high field magneto-optics to investigate th... Read More about The direct-to-indirect band gap crossover in two-dimensional van der Waals Indium Selenide crystals.

High electron mobility, quantum Hall effect and anomalous optical response in atomically thin InSe (2016)
Journal Article
Bandurin, D. A., Tyurnina, A. V., Yu, G. L., Mishchenko, A., Zólyomi, V., Morozov, S. V., …Cao, Y. (2017). High electron mobility, quantum Hall effect and anomalous optical response in atomically thin InSe. Nature Nanotechnology, 12(3), 223-227. https://doi.org/10.1038/nnano.2016.242

© 2017 Macmillan Publishers Limited, part of Springer Nature. All rights reserved. A decade of intense research on two-dimensional (2D) atomic crystals has revealed that their properties can differ greatly from those of the parent compound. These dif... Read More about High electron mobility, quantum Hall effect and anomalous optical response in atomically thin InSe.

Resonant Zener tunnelling via zero-dimensional states in a narrow gap diode (2016)
Journal Article
Di Poala, D. M., Kesaria, M., Makarovsky, O., Velichko, A., Eaves, L., Mori, N., …Patanè, A. (in press). Resonant Zener tunnelling via zero-dimensional states in a narrow gap diode. Scientific Reports, 6, Article e32039. https://doi.org/10.1038/srep32039

Interband tunnelling of carriers through a forbidden energy gap, known as Zener tunnelling, is a phenomenon of fundamental and technological interest. Its experimental observation in the Esaki p-n semiconductor diode has led to the first demonstratio... Read More about Resonant Zener tunnelling via zero-dimensional states in a narrow gap diode.

Tuning the valley and chiral quantum state of Dirac electrons in van der Waals heterostructures (2016)
Journal Article
Wallbank, J. . R., Ghazaryan, D., Misra, A., Cao, Y., Tu, J. . S., Piot, B. A., …Mishchenko, A. (2016). Tuning the valley and chiral quantum state of Dirac electrons in van der Waals heterostructures. Science, 353(6299), 575-579. https://doi.org/10.1126/science.aaf4621

Chirality is a fundamental property of electrons with the relativistic spectrum found in graphene and topological insulators. It plays a crucial role in relativistic phenomena, such as Klein tunneling, but it is difficult to visualize directly. Here... Read More about Tuning the valley and chiral quantum state of Dirac electrons in van der Waals heterostructures.

Monte Carlo study on anomalous carrier diffusion in inhomogeneous semiconductors (2015)
Journal Article
Mori, N., Hill, R., Patanè, A., & Eaves, L. (2015). Monte Carlo study on anomalous carrier diffusion in inhomogeneous semiconductors. Journal of Physics: Conference Series, 647, Article 012059. https://doi.org/10.1088/1742-6596/647/1/012059

We perform ensemble Monte Carlo simulations of electron diffusion in high mobility inhomogeneous InAs layers. Electrons move ballistically for short times while moving diffusively for sufficiently long times. We find that electrons show anomalous dif... Read More about Monte Carlo study on anomalous carrier diffusion in inhomogeneous semiconductors.

High Broad-Band Photoresponsivity of Mechanically Formed InSe-Graphene van der Waals Heterostructures (2015)
Journal Article
Mudd, G. W., Svatek, S. A., Hague, L., Makarovsky, O., Kudrynskyi, Z. R., Mellor, C. J., …Patanè, A. (2015). High Broad-Band Photoresponsivity of Mechanically Formed InSe-Graphene van der Waals Heterostructures. Advanced Materials, 27(25), 3760-3766. https://doi.org/10.1002/adma.201500889

We exploit the broad-band transparency of graphene and the favorable band line up of graphene with van der Waals InSe crystals to create new functional heterostructures and high-performance photodetectors. The InSe-graphene heterostructure exhibits a... Read More about High Broad-Band Photoresponsivity of Mechanically Formed InSe-Graphene van der Waals Heterostructures.

Ligand-Induced Control of Photoconductive Gain and Doping in a Hybrid Graphene–Quantum Dot Transistor (2015)
Journal Article
Turyanska, L., Makarovsky, O., Svatek, S. A., Beton, P. H., Mellor, C. J., Patanè, A., …Wilson, N. R. (2015). Ligand-Induced Control of Photoconductive Gain and Doping in a Hybrid Graphene–Quantum Dot Transistor. Advanced Electronic Materials, 1(7), 1500062. https://doi.org/10.1002/aelm.201500062

In graphene devices decorated with a layer of near-infrared colloidal PbS quantum dots (QDs), the choice of the QD capping ligands and the integrity of the QD layer have a strong influence on the doping, carrier mobility, and photoresponse. By using... Read More about Ligand-Induced Control of Photoconductive Gain and Doping in a Hybrid Graphene–Quantum Dot Transistor.

Meristematic cell proliferation and ribosome biogenesis are decoupled in diamagnetically levitated Arabidopsis seedlings (2013)
Journal Article
Manzano, A. I., Larkin, O. J., Dijkstra, C. E., Anthony, P., Davey, M. R., Eaves, L., …Medina, F. J. (2013). Meristematic cell proliferation and ribosome biogenesis are decoupled in diamagnetically levitated Arabidopsis seedlings. BMC Plant Biology, 13, Article 124. https://doi.org/10.1186/1471-2229-13-124

Background: Cell growth and cell proliferation are intimately linked in the presence of Earth’s gravity, but are decoupled under the microgravity conditions present in orbiting spacecraft. New technologies to simulate microgravity conditions for long... Read More about Meristematic cell proliferation and ribosome biogenesis are decoupled in diamagnetically levitated Arabidopsis seedlings.

Resonant tunnelling and negative differential conductance in graphene transistors (2013)
Journal Article
Britnell, L., Gorbachev, R., Geim, A., Ponomarenko, L., Mishchenko, A., Greenaway, M., …Eaves, L. (2013). Resonant tunnelling and negative differential conductance in graphene transistors. Nature Communications, 4, Article 1794. https://doi.org/10.1038/ncomms2817

The chemical stability of graphene and other free-standing two-dimensional crystals means that they can be stacked in different combinations to produce a new class of functional materials, designed for specific device applications. Here we report res... Read More about Resonant tunnelling and negative differential conductance in graphene transistors.