Outputs (30)

Study of a Silicon Carbide MOSFET Power Module to Establish the Benefits of Adding Anti-parallel Schottky Diodes (2018)
Conference Proceeding
Trentin, A., Hind, D., Degano, M., Tighe, C., Arevalo, S. L., Yang, L., …Packwood, M. (2018). Study of a Silicon Carbide MOSFET Power Module to Establish the Benefits of Adding Anti-parallel Schottky Diodes. In 2018 IEEE Energy Conversion Congress and Exposition (ECCE) (1829-1836). https://doi.org/10.1109/ECCE.2018.8557415

The majority of commercial Silicon Carbide (SiC) MOSFET based power modules available on the market today also include SiC Schottky diodes placed in anti-parallel with the MOSFETs. Using an accurate electrical and thermal simulation model this paper... Read More about Study of a Silicon Carbide MOSFET Power Module to Establish the Benefits of Adding Anti-parallel Schottky Diodes.

Multi-Frequency Averaging (MFA) Model of Electric-Hybrid Powertrain Suitable for Variable Frequency Operation Applied in Geographically-Distributed Power Hardware-in-the-Loop (GD-PHiL) Simulation (2018)
Conference Proceeding
Sen, S., Evans, P. L., & Johnson, C. M. (2018). Multi-Frequency Averaging (MFA) Model of Electric-Hybrid Powertrain Suitable for Variable Frequency Operation Applied in Geographically-Distributed Power Hardware-in-the-Loop (GD-PHiL) Simulation. In Proceedings - 2018 IEEE Vehicle Power and Propulsion Conference (VPPC) (1-6). https://doi.org/10.1109/VPPC.2018.8604967

© 2018 IEEE Project aims to develop capability for OEMs and suppliers to 'virtually-connect' multiple prototype powertrain components (engine, motor-drive etc.) and engage in real-time system simulation, thereby reducing cost by eliminating co-locati... Read More about Multi-Frequency Averaging (MFA) Model of Electric-Hybrid Powertrain Suitable for Variable Frequency Operation Applied in Geographically-Distributed Power Hardware-in-the-Loop (GD-PHiL) Simulation.

Development of a highly integrated 10 kV SiC MOSFET power module with a direct jet impingement cooling system (2018)
Conference Proceeding
Mouawad, B., Skuriat, R., Li, J., Johnson, C. M., & DiMarino, C. (2018). Development of a highly integrated 10 kV SiC MOSFET power module with a direct jet impingement cooling system. In 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD). https://doi.org/10.1109/ispsd.2018.8393651

This paper presents a novel, highly integrated packaging design for Wolfspeed’s 10 kV SiC MOSFETs. These devices offer faster switching performance and lower losses than silicon devices. However, it has been shown that the package can have profound i... Read More about Development of a highly integrated 10 kV SiC MOSFET power module with a direct jet impingement cooling system.

Cost effective direct-substrate jet impingement cooling concept for power application (2018)
Conference Proceeding
Mouawad, B., Abebe, R., Skuriat, R., Li, J., De Lillo, L., Empringham, L., …Haynes, G. (2018). Cost effective direct-substrate jet impingement cooling concept for power application. In PCIM Europe 2018; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management

Direct substrate jet impingement cooling can eliminate the use of the baseplate and significantly reduce the weight and volume of conventional thermal management solutions. This work demonstrates a cost-effective manufacturing approach based on print... Read More about Cost effective direct-substrate jet impingement cooling concept for power application.

A wire-bond-less 10 KV SiC MOSFET power module with reduced common-mode noise and electric field (2018)
Conference Proceeding
DiMarino, C., Mouawad, B., Skuriat, R., Li, K., Xu, Y., Johnson, C., …Burgos, R. (2018). A wire-bond-less 10 KV SiC MOSFET power module with reduced common-mode noise and electric field. In PCIM Europe 2018; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management

While wide-bandgap devices offer many benefits, they also bring new challenges for designers. In particular, the new 10 kV silicon carbide (SiC) MOSFETs can switch higher voltages faster and with lower losses than silicon devices while also being sma... Read More about A wire-bond-less 10 KV SiC MOSFET power module with reduced common-mode noise and electric field.

Novel silicon carbide integrated power module for EV application (2018)
Conference Proceeding
Mouawad, B., Espina, J., Li, J., Empringham, L., & Johnson, C. M. (2018). Novel silicon carbide integrated power module for EV application. In IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia 2018), At Xi'an, Shaanxi

The successful penetration of Electric Vehicles (EVs) into the global automotive markets requires the developments of cost effective, high performance and high integration power electronic systems. The present work is concerned with the structural in... Read More about Novel silicon carbide integrated power module for EV application.

Next generation integrated drive: a novel thermal and electrical integration technique for high power density converters used in automotive drive systems (2018)
Conference Proceeding
Ahmadi, B., Espina, J., De Lillo, L., Abebe, R., Empringham, L., & Johnson, C. M. (2018). Next generation integrated drive: a novel thermal and electrical integration technique for high power density converters used in automotive drive systems.

In this paper, an innovative method of electro-thermal integration of a drive system is presented. Important challenges of this integration consist of, firstly coupled thermal design of switching power modules and PM electric motor and secondly integ... Read More about Next generation integrated drive: a novel thermal and electrical integration technique for high power density converters used in automotive drive systems.

Comparison of thermal and reliability performance between a SiC MOSFET module with embedded decoupling capacitors and commercial Si IGBT power modules (2018)
Conference Proceeding
Yang, L., Agyakwa, P., Corfield, M., Johnson, M., Harris, A., Packwood, M., & Paciura, K. (2018). Comparison of thermal and reliability performance between a SiC MOSFET module with embedded decoupling capacitors and commercial Si IGBT power modules.

This paper characterizes thermal and reliability performance of a SiC MOSFET power module with embedded decoupling capacitors and without anti-parallel diodes. Active and passive temperature cycling, supported by transient thermal impedance character... Read More about Comparison of thermal and reliability performance between a SiC MOSFET module with embedded decoupling capacitors and commercial Si IGBT power modules.

A study on probability of distribution loads based on expectation maximization algorithm (2017)
Conference Proceeding
Ganjavi, A., Christopher, E., Johnson, C. M., & Clare, J. (2017). A study on probability of distribution loads based on expectation maximization algorithm. In IEEE Power and Energy Society Innovative Smart Grid Technologies Conference, ISGT 2017 (1-5). https://doi.org/10.1109/ISGT.2017.8086037

In a distribution power network, the load model has no certain pattern or predicted behaviour due to large range of data and changes in energy consumption for end-user consumers. Thus, a powerful analysis based on probabilistic structure is required.... Read More about A study on probability of distribution loads based on expectation maximization algorithm.

A new analysis for finding the optimum power rating of low voltage distribution power electronics based on statistics and probabilities (2017)
Conference Proceeding
Ganjavi, A., Christopher, E., Johnson, C. M., & Clare, J. C. (2017). A new analysis for finding the optimum power rating of low voltage distribution power electronics based on statistics and probabilities.

The continuing trend toward heavier load and high penetration of Distribution Generation (DG) units in low voltage rural distribution feeders requires power electronic-based solution alternatives for voltage regulation purposes. The design of power e... Read More about A new analysis for finding the optimum power rating of low voltage distribution power electronics based on statistics and probabilities.

Design and development of a high-density, high-speed 10 kV SiC MOSFET module (2017)
Conference Proceeding
Di Marino, C., Boroyevich, D., Burgos, R., Johnson, C. M., & Lu, G. (2017). Design and development of a high-density, high-speed 10 kV SiC MOSFET module.

High-density packaging of fast-switching power semiconductors typically requires low parasitic inductance, high heat extraction, and high thermo-mechanical reliability. High-density packaging of high-voltage power semiconductors, such as 10 kV SiC MO... Read More about Design and development of a high-density, high-speed 10 kV SiC MOSFET module.

Using multi time-scale electro-thermal simulation approach to evaluate SiC-MOSFET power C=converter in virtual prototyping design tool (2017)
Conference Proceeding
Li, K., Evans, P., & Johnson, C. M. (in press). Using multi time-scale electro-thermal simulation approach to evaluate SiC-MOSFET power C=converter in virtual prototyping design tool.

Using virtual prototyping (VP) design tool to eval¬uate power converter electro-thermal performance can help designers to validate prototype in a quick way. However, different system time-scale requires efficient electro-thermal simulation techniques... Read More about Using multi time-scale electro-thermal simulation approach to evaluate SiC-MOSFET power C=converter in virtual prototyping design tool.

Highly-integrated power cell for high-power wide band-gap power converters (2017)
Conference Proceeding
Espina, J., Ahmadi, B., Empringham, L., De Lillo, L., & Johnson, C. M. (2017). Highly-integrated power cell for high-power wide band-gap power converters.

The fast switching speeds and low specific conduction losses of wide band-gap semiconductors allow the realisation of high-frequency, high power-density switching converters with dramatically reduced passive component requirements compared to Silicon... Read More about Highly-integrated power cell for high-power wide band-gap power converters.

Design and construction of a co-planar power bus interconnect for low inductance switching (2017)
Conference Proceeding
Lin, X., Li, J., & Johnson, M. (2017). Design and construction of a co-planar power bus interconnect for low inductance switching. In 2017 IEEE International Workshop On Integrated Power Packaging (IWIPP) (1-4). https://doi.org/10.1109/IWIPP.2017.7936755

A co-planar tab-slot type of interconnect demonstrator for connecting power switching devices and DC bus capacitors has been designed and constructed, aimed at low inductance switching. The demonstrator is composed of a double-sided tab connector and... Read More about Design and construction of a co-planar power bus interconnect for low inductance switching.

Suppression of electromagnetic interference using screening and shielding techniques within switching cells (2017)
Conference Proceeding
Zhang, Z., & Johnson, C. M. (2017). Suppression of electromagnetic interference using screening and shielding techniques within switching cells.

in this paper we introduce the use of combination of screening and shielding to suppress electromagnetic interference (EMI) generated by a switching cell. We investigate the screening of common mode (CM) currents and the shielding of magnetic fields... Read More about Suppression of electromagnetic interference using screening and shielding techniques within switching cells.

SiC and GaN power transistors switching energy evaluation in hard and soft switching conditions (2016)
Conference Proceeding
Li, K., Evans, P., & Johnson, C. M. (2016). SiC and GaN power transistors switching energy evaluation in hard and soft switching conditions.

SiC and GaN power transistors switching energy are compared in this paper. In order to compare switching energy Esw of the same power rating device, a theoretical analysis is given to compare SiC device conduction loss and switching losses change whe... Read More about SiC and GaN power transistors switching energy evaluation in hard and soft switching conditions.

A novel full soft-switching resonant power converter for mid-feeder voltage regulation of low voltage distribution network (2016)
Conference Proceeding
Ji, C., Watson, A. J., Clare, J. C., & Johnson, C. M. (2016). A novel full soft-switching resonant power converter for mid-feeder voltage regulation of low voltage distribution network. In 2016 18th European Conference on Power Electronics and Applications (EPE'16 ECCE Europe) (1-6). https://doi.org/10.1109/EPE.2016.7695398

This paper presents a novel resonant based, high power density power electronics converter solution for mid-feeder voltage regulation of a low voltage (LV) distribution network. Owing to the use of high switching frequency operation and a full soft-s... Read More about A novel full soft-switching resonant power converter for mid-feeder voltage regulation of low voltage distribution network.

SiC/GaN power semiconductor devices theoretical comparison and experimental evaluation (2016)
Conference Proceeding
Li, K., Evans, P., & Johnson, C. M. (2016). SiC/GaN power semiconductor devices theoretical comparison and experimental evaluation.

SiC and GaN power transistors conduction loss and switching losses are compared in this paper. In order to compare performance of the same power rating device, a theoretical analysis is given to compare SiC device conduction loss and switching losses... Read More about SiC/GaN power semiconductor devices theoretical comparison and experimental evaluation.

Developing power semiconductor device model for virtual prototyping of power electronics systems (2016)
Conference Proceeding
Li, K., Evans, P., & Johnson, C. M. (2016). Developing power semiconductor device model for virtual prototyping of power electronics systems.

Virtual prototyping (VP) is very important for power electronics systems design. A virtual prototyping design tool based on different modelling technology and model order reduction is proposed in the paper. In order to combine circuit electromagnetic... Read More about Developing power semiconductor device model for virtual prototyping of power electronics systems.

GaN-HEMT dynamic ON-state resistance characterisation and modelling (2016)
Conference Proceeding
Li, K., Evans, P., & Johnson, C. M. (2016). GaN-HEMT dynamic ON-state resistance characterisation and modelling.

GaN-HEMTs suffer from trapping effects which might increase device ON-state resistance (RDS(on)) values. Thus, dynamic RDS(on) of a commercial GaN-HEMT is characterized at different bias voltages in the paper by a proposed measurement circuit. Based... Read More about GaN-HEMT dynamic ON-state resistance characterisation and modelling.

Low inductance 2.5kV packaging technology for SiC switches (2016)
Conference Proceeding
Mouawad, B., Li, J., Castellazzi, A., Johnson, C. M., Erlbacher, T., & Friedriches, P. (2016). Low inductance 2.5kV packaging technology for SiC switches.

The switching speed of power semiconductors has reached levels where conventional semiconductors packages limit the achievable performance due to relatively high parasitic inductance and capacitance. This paper presents a novel packaging structure wh... Read More about Low inductance 2.5kV packaging technology for SiC switches.

Investigating the impact of varying the number of distributed energy resources on controlling the power flow within a microgrid (2015)
Conference Proceeding
Fazeli, A., Sumner, M., Johnson, C. M., & Christopher, E. (2015). Investigating the impact of varying the number of distributed energy resources on controlling the power flow within a microgrid.

The electrification of heat and transport in addition to integration of intermittent renewable resources into the existing electricity network is expected to occur in near future. Such a transformation is expected to force the operation of the electr... Read More about Investigating the impact of varying the number of distributed energy resources on controlling the power flow within a microgrid.

A novel stochastic modelling approach for electric vehicle charging power and energy requirements (2015)
Conference Proceeding
Fazeli, A., Johnson, C. M., Sumner, M., & Christopher, E. (2015). A novel stochastic modelling approach for electric vehicle charging power and energy requirements.

Electrification of heat and transport in addition to integration of intermittent renewable resources into the existing electricity network is expected to occur in near future. Such a transformation is expected to force the operation of the electricit... Read More about A novel stochastic modelling approach for electric vehicle charging power and energy requirements.

Power flow control for power and voltage management in future smart energy communities (2014)
Conference Proceeding
Fazeli, A., Sumner, M., Christopher, E., & Johnson, C. M. (2014). Power flow control for power and voltage management in future smart energy communities.

The Community Power Flow Control (CPFC) Algorithm has been proposed as a technique for managing electrical power and energy within small communities. The CPFC manages the resources in the community (DSM, energy storage, RES) in order to control the c... Read More about Power flow control for power and voltage management in future smart energy communities.

A non-destructive study of crack development during thermal cycling of Al wire bonds using x-ray computed tomography (2014)
Conference Proceeding
Agyakwa, P., Yang, L., Corfield, M., & Johnson, C. M. (2014). A non-destructive study of crack development during thermal cycling of Al wire bonds using x-ray computed tomography.

This paper concerns the non-destructive visualisation of the evolution of damage within ultrasonically bonded alumini-um wires using three dimensional x-ray computed tomography. We demonstrate the potential to observe the progressive accumulation of... Read More about A non-destructive study of crack development during thermal cycling of Al wire bonds using x-ray computed tomography.

Packaging/assembling technologies for a high performance SiC-based planar power module
Conference Proceeding
Li, J., Agyakwa, P., Evans, P., Johnson, C. M., Zhao, Y., Wu, Y., & Evans, K. (in press). Packaging/assembling technologies for a high performance SiC-based planar power module.

This work is to investigate the relevant packaging / assembling technologies for developing a SiC-based planar power module which is aimed to meet the requirements such as operating temperature of -60 °C to 200 °C, SiC devices connected to 540 V DC b... Read More about Packaging/assembling technologies for a high performance SiC-based planar power module.

Hybrid half-bridge package for high voltage application
Conference Proceeding
Mouawad, B., Li, J., Castellazzi, A., & Johnson, C. M. (in press). Hybrid half-bridge package for high voltage application.

3D power module structures allow for better cooling and lower parasitic inductances compared with the classical planar technology. In this paper, we present a hybrid half-bridge in a 3D packaging configuration, dedicated for high voltage application.... Read More about Hybrid half-bridge package for high voltage application.

Low parasitic inductance multi-chip SiC devices packaging technology
Conference Proceeding
Li, J., Mouawad, B., Castellazzi, A., Friedrichs, P., & Johnson, C. M. (in press). Low parasitic inductance multi-chip SiC devices packaging technology.

This paper presents a novel packaging structure which employs stacked substrate and flexible printed circuit board (PCB) to obtain very low parasitic inductance and hence feature high switching speed SiC power devices. A half-bridge module aimed at b... Read More about Low parasitic inductance multi-chip SiC devices packaging technology.

Selection of materials for IGBT modules to achieve stable short circuit failure behaviour
Conference Proceeding
Li, J., Yaqub, I., & Johnson, C. M. (in press). Selection of materials for IGBT modules to achieve stable short circuit failure behaviour.

IGBT modules which can fail to stable short circuit mode have great allocations in electricity network related fields. Sn3.5Ag solder joint and sintered Ag joint for the die attachment and Mo, Cu, Sn3.5Ag, Al and Ag foils for the top side insert mate... Read More about Selection of materials for IGBT modules to achieve stable short circuit failure behaviour.

Reliable integration of a high performance multi-chip half-bridge SiC power module
Conference Proceeding
Mouawad, B., Li, J., Castellazzi, A., & Johnson, C. M. (in press). Reliable integration of a high performance multi-chip half-bridge SiC power module.

Silicon carbide (SiC) devices have been adopted to push the boundaries further in terms of power density, conversion efficiency, switching speed or thermal capability. To have the benefit of such semiconductors, new packaging should be developed to m... Read More about Reliable integration of a high performance multi-chip half-bridge SiC power module.