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Integrated Half-Bridge Switch Using 70- ?m-Thin Devices and Hollow Interconnects (2014)
Journal Article
Solomon, A. K., Li, J., Castellazzi, A., & Johnson, C. M. (2015). Integrated Half-Bridge Switch Using 70- ?m-Thin Devices and Hollow Interconnects. IEEE Transactions on Industry Applications, 51(1), 556-566. https://doi.org/10.1109/TIA.2014.2334734

An application-oriented integration concept for a half-bridge switch assembly has been developed based on the latest generation 70- ?m-thin insulated gate bipolar transistors and diodes, which are rated at 600 V/200 A. This paper addresses the design... Read More about Integrated Half-Bridge Switch Using 70- ?m-Thin Devices and Hollow Interconnects.

Measurement of proton tunneling in short hydrogen bonds in single crystals of 3,5 pyridinedicarboxylic acid using nuclear magnetic resonance spectroscopy (2014)
Journal Article
Frantsuzov, I., Ford, S. J., Radosavljevic-Evans, I., Horsewill, A. J., Trommsdorff, H. P., & Johnson, M. R. (2014). Measurement of proton tunneling in short hydrogen bonds in single crystals of 3,5 pyridinedicarboxylic acid using nuclear magnetic resonance spectroscopy. Physical Review Letters, 113, https://doi.org/10.1103/PhysRevLett.113.018301

In this letter, we present NMR spin-lattice and relaxometry data for proton transfer in one of the shortest known N-H???O hydrogen bonds in a single crystal of 3,5 pyridinedicarboxylic acid (35PDCA). It is widely believed that proton transfer by quan... Read More about Measurement of proton tunneling in short hydrogen bonds in single crystals of 3,5 pyridinedicarboxylic acid using nuclear magnetic resonance spectroscopy.

Interdiffusion coefficients of binary multiphase systems with consideration of variation in Molar volumes (2014)
Journal Article
Li, J., Agyakwa, P., & Johnson, C. M. (2014). Interdiffusion coefficients of binary multiphase systems with consideration of variation in Molar volumes

This communication introduces a modification to the Wagner method to reveal and correct considerable systematic errors existing in the previously established analytical methods used to calculate the interdiffusion coefficients of binary multiphase sy... Read More about Interdiffusion coefficients of binary multiphase systems with consideration of variation in Molar volumes.

A non-destructive study of crack development during thermal cycling of Al wire bonds using x-ray computed tomography (2014)
Conference Proceeding
Agyakwa, P., Yang, L., Corfield, M., & Johnson, C. M. (2014). A non-destructive study of crack development during thermal cycling of Al wire bonds using x-ray computed tomography.

This paper concerns the non-destructive visualisation of the evolution of damage within ultrasonically bonded alumini-um wires using three dimensional x-ray computed tomography. We demonstrate the potential to observe the progressive accumulation of... Read More about A non-destructive study of crack development during thermal cycling of Al wire bonds using x-ray computed tomography.

Suitable Thicknesses of Base Metal and Interlayer, and Evolution of Phases for Ag/Sn/Ag Transient liquid-phase Joints Used for Power Die Attachment (2014)
Journal Article
Li, J., Agyakwa, P., & Johnson, C. (2014). Suitable Thicknesses of Base Metal and Interlayer, and Evolution of Phases for Ag/Sn/Ag Transient liquid-phase Joints Used for Power Die Attachment. Journal of Electronic Materials, 43(4), 983-995. https://doi.org/10.1007/s11664-013-2971-7

Real Si insulated gate bipolar transistors with conventional Ni/Ag metallization and dummy Si chips with thickened Ni/Ag metallization have both been bonded, at 250°C for 0 min, 40 min, and 640 min, to Ag foil electroplated with 2.7 μm and 6.8 μm thi... Read More about Suitable Thicknesses of Base Metal and Interlayer, and Evolution of Phases for Ag/Sn/Ag Transient liquid-phase Joints Used for Power Die Attachment.

Confirming a predicted selection rule in inelastic neutron scattering spectroscopy: the quantum translator-rotator H2 entrapped inside C60 (2014)
Journal Article
Xu, M., Jiménez-Ruiz, M., Johnson, M. R., Rols, S., Ye, S., Carravetta, M., …Horsewill, A. J. (2014). Confirming a predicted selection rule in inelastic neutron scattering spectroscopy: the quantum translator-rotator H2 entrapped inside C60. Physical Review Letters, 113(123001), https://doi.org/10.1103/PhysRevLett.113.123001

We report an inelastic neutron scattering (INS) study of H2 molecule encapsulated inside the fullerene C60 which confirms the recently predicted selection rule, the first to be established for the INS spectroscopy of aperiodic, discrete molecular com... Read More about Confirming a predicted selection rule in inelastic neutron scattering spectroscopy: the quantum translator-rotator H2 entrapped inside C60.

Symmetry-breaking in the endofullerene H2O@C60 revealed in the quantum dynamics of ortho and para-water: a neutron scattering investigation (2014)
Journal Article
Goh, K. S., Jimenez-Ruiz, M., Johnson, M. R., Rols, S., Ollivier, J., Denning, M. S., …Horsewill, A. J. (2014). Symmetry-breaking in the endofullerene H2O@C60 revealed in the quantum dynamics of ortho and para-water: a neutron scattering investigation. Physical Chemistry Chemical Physics, 16(39), https://doi.org/10.1039/c4cp03272a

Inelastic neutron scattering (INS) has been employed to investigate the quantum dynamics of water molecules permanently entrapped inside the cages of C60 fullerene molecules. This study of the supramolecular complex, H2O@C60, provides the unique oppo... Read More about Symmetry-breaking in the endofullerene H2O@C60 revealed in the quantum dynamics of ortho and para-water: a neutron scattering investigation.

Design Optimization of Quasi-Active Gate Control for Series-Connected Power Devices (2013)
Journal Article
Teerakawanich, N., & Johnson, C. M. (2014). Design Optimization of Quasi-Active Gate Control for Series-Connected Power Devices. IEEE Transactions on Power Electronics, 29(6), 2705-2714. https://doi.org/10.1109/TPEL.2013.2274158

This paper presents a new gate drive circuit for driving a series string of insulated-gate bipolar transistors (IGBTs). The proposed quasi-active gate control (QAGC) circuit is simple to implement as it consists of only a few passive components in ad... Read More about Design Optimization of Quasi-Active Gate Control for Series-Connected Power Devices.

Reliable integration of a high performance multi-chip half-bridge SiC power module
Conference Proceeding
Mouawad, B., Li, J., Castellazzi, A., & Johnson, C. M. (in press). Reliable integration of a high performance multi-chip half-bridge SiC power module.

Silicon carbide (SiC) devices have been adopted to push the boundaries further in terms of power density, conversion efficiency, switching speed or thermal capability. To have the benefit of such semiconductors, new packaging should be developed to m... Read More about Reliable integration of a high performance multi-chip half-bridge SiC power module.

Selection of materials for IGBT modules to achieve stable short circuit failure behaviour
Conference Proceeding
Li, J., Yaqub, I., & Johnson, C. M. (in press). Selection of materials for IGBT modules to achieve stable short circuit failure behaviour.

IGBT modules which can fail to stable short circuit mode have great allocations in electricity network related fields. Sn3.5Ag solder joint and sintered Ag joint for the die attachment and Mo, Cu, Sn3.5Ag, Al and Ag foils for the top side insert mate... Read More about Selection of materials for IGBT modules to achieve stable short circuit failure behaviour.

Low parasitic inductance multi-chip SiC devices packaging technology
Conference Proceeding
Li, J., Mouawad, B., Castellazzi, A., Friedrichs, P., & Johnson, C. M. (in press). Low parasitic inductance multi-chip SiC devices packaging technology.

This paper presents a novel packaging structure which employs stacked substrate and flexible printed circuit board (PCB) to obtain very low parasitic inductance and hence feature high switching speed SiC power devices. A half-bridge module aimed at b... Read More about Low parasitic inductance multi-chip SiC devices packaging technology.

Hybrid half-bridge package for high voltage application
Conference Proceeding
Mouawad, B., Li, J., Castellazzi, A., & Johnson, C. M. (in press). Hybrid half-bridge package for high voltage application.

3D power module structures allow for better cooling and lower parasitic inductances compared with the classical planar technology. In this paper, we present a hybrid half-bridge in a 3D packaging configuration, dedicated for high voltage application.... Read More about Hybrid half-bridge package for high voltage application.

Packaging/assembling technologies for a high performance SiC-based planar power module
Conference Proceeding
Li, J., Agyakwa, P., Evans, P., Johnson, C. M., Zhao, Y., Wu, Y., & Evans, K. (in press). Packaging/assembling technologies for a high performance SiC-based planar power module.

This work is to investigate the relevant packaging / assembling technologies for developing a SiC-based planar power module which is aimed to meet the requirements such as operating temperature of -60 °C to 200 °C, SiC devices connected to 540 V DC b... Read More about Packaging/assembling technologies for a high performance SiC-based planar power module.