Strain-Engineered Graphene Grown on Hexagonal Boron Nitride by Molecular Beam Epitaxy
(2016)
Journal Article
Summerfield, A., Davies, A., Cheng, T. S., Korolkov, V. V., Cho, Y., Mellor, C. J., …Beton, P. H. (2016). Strain-Engineered Graphene Grown on Hexagonal Boron Nitride by Molecular Beam Epitaxy. Scientific Reports, 6(1), Article 22440. https://doi.org/10.1038/srep22440
Graphene grown by high temperature molecular beam epitaxy on hexagonal boron nitride (hBN) forms continuous domains with dimensions of order 20 μm, and exhibits moiré patterns with large periodicities, up to ~30 nm, indicating that the layers are hig... Read More about Strain-Engineered Graphene Grown on Hexagonal Boron Nitride by Molecular Beam Epitaxy.