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Strain-Engineered Graphene Grown on Hexagonal Boron Nitride by Molecular Beam Epitaxy (2016)
Journal Article
Summerfield, A., Davies, A., Cheng, T. S., Korolkov, V. V., Cho, Y., Mellor, C. J., …Beton, P. H. (2016). Strain-Engineered Graphene Grown on Hexagonal Boron Nitride by Molecular Beam Epitaxy. Scientific Reports, 6(1), Article 22440. https://doi.org/10.1038/srep22440

Graphene grown by high temperature molecular beam epitaxy on hexagonal boron nitride (hBN) forms continuous domains with dimensions of order 20 μm, and exhibits moiré patterns with large periodicities, up to ~30 nm, indicating that the layers are hig... Read More about Strain-Engineered Graphene Grown on Hexagonal Boron Nitride by Molecular Beam Epitaxy.

High temperature MBE of graphene on sapphire and hexagonal boron nitride flakes on sapphire (2016)
Journal Article
Cheng, T. S., Davies, A., Summerfield, A., Cho, Y., Cebula, I., Hill, R. J., …Novikov, S. V. (2016). High temperature MBE of graphene on sapphire and hexagonal boron nitride flakes on sapphire. Journal of Vacuum Science and Technology B, 34(2), 02L101. https://doi.org/10.1116/1.4938157

The discovery of graphene and its remarkable electronic properties has provided scientists with a revolutionary material system for electronics and optoelectronics. Here, the authors investigate molecular beam epitaxy (MBE) as a growth method for gra... Read More about High temperature MBE of graphene on sapphire and hexagonal boron nitride flakes on sapphire.

Resonant tunnelling between the chiral Landau states of twisted graphene lattices (2015)
Journal Article
Greenaway, M., Vdovin, E. E., Mishchenko, A., Makarovsky, O., Patanè, A., Wallbank, J., …Eaves, L. (2015). Resonant tunnelling between the chiral Landau states of twisted graphene lattices. Nature Physics, 11(12), 1057-1062. https://doi.org/10.1038/nphys3507

A class of multilayered functional materials has recently emerged in which the component atomic layers are held together by weak van der Waals forces that preserve the structural integrity and physical properties of each layer. An exemplar of such a... Read More about Resonant tunnelling between the chiral Landau states of twisted graphene lattices.

Monte Carlo study on anomalous carrier diffusion in inhomogeneous semiconductors (2015)
Journal Article
Mori, N., Hill, R., Patanè, A., & Eaves, L. (2015). Monte Carlo study on anomalous carrier diffusion in inhomogeneous semiconductors. Journal of Physics: Conference Series, 647, Article 012059. https://doi.org/10.1088/1742-6596/647/1/012059

We perform ensemble Monte Carlo simulations of electron diffusion in high mobility inhomogeneous InAs layers. Electrons move ballistically for short times while moving diffusively for sufficiently long times. We find that electrons show anomalous dif... Read More about Monte Carlo study on anomalous carrier diffusion in inhomogeneous semiconductors.

Graphene-hexagonal boron nitride resonant tunneling diodes as high-frequency oscillators (2015)
Journal Article
Gaskell, J., Eaves, L., Novoselov, K., Mishchenko, A., Geim, A., Fromhold, T., & Greenaway, M. (2015). Graphene-hexagonal boron nitride resonant tunneling diodes as high-frequency oscillators. Applied Physics Letters, 107(10), Article 103105. https://doi.org/10.1063/1.4930230

We assess the potential of two-terminal graphene-hexagonal boron nitride-graphene resonant tunneling diodes as high-frequency oscillators, using self-consistent quantum transport and electrostatic simulations to determine the time-dependent response... Read More about Graphene-hexagonal boron nitride resonant tunneling diodes as high-frequency oscillators.

High Broad-Band Photoresponsivity of Mechanically Formed InSe-Graphene van der Waals Heterostructures (2015)
Journal Article
Mudd, G. W., Svatek, S. A., Hague, L., Makarovsky, O., Kudrynskyi, Z. R., Mellor, C. J., …Patanè, A. (2015). High Broad-Band Photoresponsivity of Mechanically Formed InSe-Graphene van der Waals Heterostructures. Advanced Materials, 27(25), 3760-3766. https://doi.org/10.1002/adma.201500889

We exploit the broad-band transparency of graphene and the favorable band line up of graphene with van der Waals InSe crystals to create new functional heterostructures and high-performance photodetectors. The InSe-graphene heterostructure exhibits a... Read More about High Broad-Band Photoresponsivity of Mechanically Formed InSe-Graphene van der Waals Heterostructures.

Ligand-Induced Control of Photoconductive Gain and Doping in a Hybrid Graphene–Quantum Dot Transistor (2015)
Journal Article
Turyanska, L., Makarovsky, O., Svatek, S. A., Beton, P. H., Mellor, C. J., Patanè, A., …Wilson, N. R. (2015). Ligand-Induced Control of Photoconductive Gain and Doping in a Hybrid Graphene–Quantum Dot Transistor. Advanced Electronic Materials, 1(7), 1500062. https://doi.org/10.1002/aelm.201500062

In graphene devices decorated with a layer of near-infrared colloidal PbS quantum dots (QDs), the choice of the QD capping ligands and the integrity of the QD layer have a strong influence on the doping, carrier mobility, and photoresponse. By using... Read More about Ligand-Induced Control of Photoconductive Gain and Doping in a Hybrid Graphene–Quantum Dot Transistor.

Twist-controlled resonant tunnelling in graphene/boron nitride/graphene heterostructures (2014)
Journal Article
Mishchenko, A., Tu, J., Cao, Y., Gorbachev, R., Wallbank, J., Greenaway, M., …Novoselov, K. (2014). Twist-controlled resonant tunnelling in graphene/boron nitride/graphene heterostructures. Nature Nanotechnology, 9, 808-813. https://doi.org/10.1038/NNANO.2014.187

Recent developments in the technology of van der Waals heterostructures made from two-dimensional atomic crystals ave already led to the observation of new physical phenomena, such as the metal-insulator transition and Coulomb drag, and to the realis... Read More about Twist-controlled resonant tunnelling in graphene/boron nitride/graphene heterostructures.

Room Temperature Electroluminescence from Mechanically Formed van der Waals III-VI Homojunctions and Heterojunctions (2014)
Journal Article
Balakrishnan, N., Kudrynskyi, Z. R., Fay, M. W., Mudd, G. W., Svatek, S. A., Makarovsky, O., …Patanè, A. (2014). Room Temperature Electroluminescence from Mechanically Formed van der Waals III-VI Homojunctions and Heterojunctions. Advanced Optical Materials, 2(11), 1064-1069. https://doi.org/10.1002/adom.201400202

Room temperature electroluminescence from semiconductor junctions is demonstrated. The junctions are fabricated by the exfoliation and direct mechanical adhesion of InSe and GaSe van der Waals layered crystals. Homojunction diodes formed from layers... Read More about Room Temperature Electroluminescence from Mechanically Formed van der Waals III-VI Homojunctions and Heterojunctions.

Meristematic cell proliferation and ribosome biogenesis are decoupled in diamagnetically levitated Arabidopsis seedlings (2013)
Journal Article
Manzano, A. I., Larkin, O. J., Dijkstra, C. E., Anthony, P., Davey, M. R., Eaves, L., …Medina, F. J. (2013). Meristematic cell proliferation and ribosome biogenesis are decoupled in diamagnetically levitated Arabidopsis seedlings. BMC Plant Biology, 13, Article 124. https://doi.org/10.1186/1471-2229-13-124

Background: Cell growth and cell proliferation are intimately linked in the presence of Earth’s gravity, but are decoupled under the microgravity conditions present in orbiting spacecraft. New technologies to simulate microgravity conditions for long... Read More about Meristematic cell proliferation and ribosome biogenesis are decoupled in diamagnetically levitated Arabidopsis seedlings.

Resonant tunnelling and negative differential conductance in graphene transistors (2013)
Journal Article
Britnell, L., Gorbachev, R., Geim, A., Ponomarenko, L., Mishchenko, A., Greenaway, M., …Eaves, L. (2013). Resonant tunnelling and negative differential conductance in graphene transistors. Nature Communications, 4, Article 1794. https://doi.org/10.1038/ncomms2817

The chemical stability of graphene and other free-standing two-dimensional crystals means that they can be stacked in different combinations to produce a new class of functional materials, designed for specific device applications. Here we report res... Read More about Resonant tunnelling and negative differential conductance in graphene transistors.