Schottky-barrier thin-film transistors based on HfO2-capped InSe
(2019)
Journal Article
Wang, Y., Zhang, J., Liang, G., Shi, Y., Zhang, Y., Kudrynskyi, Z. R., …Song, A. (2019). Schottky-barrier thin-film transistors based on HfO2-capped InSe. Applied Physics Letters, 115(3), Article 033502. https://doi.org/10.1063/1.5096965
© 2019 Author(s). Indium selenide (InSe) is an emerging two-dimensional semiconductor and a promising candidate for next generation thin film transistors (TFTs). Here, we report on Schottky barrier TFTs (SB-TFTs) in which a 0.9-nm-thick HfO2 dielectr... Read More about Schottky-barrier thin-film transistors based on HfO2-capped InSe.