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Imaging current-induced switching of antiferromagnetic domains in CuMnAs (2017)
Journal Article
Grzybowski, M., Wadley, P., Edmonds, K., Beardsley, R., Hills, V. A., Campion, R., …Dhesi, S. (2017). Imaging current-induced switching of antiferromagnetic domains in CuMnAs. Physical Review Letters, 118(5), Article 057701. https://doi.org/10.1103/PhysRevLett.118.057701

The magnetic order in antiferromagnetic materials is hard to control with external magnetic fields. Using X-ray Magnetic Linear Dichroism microscopy, we show that staggered effective fields generated by electrical current can induce modification of t... Read More about Imaging current-induced switching of antiferromagnetic domains in CuMnAs.

Optical determination of the Néel vector in a CuMnAs thin-film antiferromagnet (2017)
Journal Article
Saidl, V., Němec, P., Wadley, P., Hills, V., Campion, R. P., Novák, V., …Jungwirth, T. (2017). Optical determination of the Néel vector in a CuMnAs thin-film antiferromagnet. Nature Photonics, 11(2), 91-96. https://doi.org/10.1038/nphoton.2016.255

Recent breakthroughs in electrical detection and manipulation of antiferromagnets have opened a new avenue in the research of non-volatile spintronic devices.1-10 Antiparallel spin sublattices in antiferromagnets, producing zero dipolar fields, lead... Read More about Optical determination of the Néel vector in a CuMnAs thin-film antiferromagnet.

Contributions from coherent and incoherent lattice excitations to ultrafast optical control of magnetic anisotropy of metallic films (2016)
Journal Article
Kats, V. N., Linnik, T. L., Salasyuk, A. S., Rushforth, A. W., Wang, M., Wadley, P., …Scherbakov, A. V. (2016). Contributions from coherent and incoherent lattice excitations to ultrafast optical control of magnetic anisotropy of metallic films. Proceedings of SPIE, 9835(98351Q), https://doi.org/10.1117/12.2238020

Spin-lattice coupling is one of the most prominent interactions mediating response of spin ensemble to ultrafast optical excitation. Here we exploit optically generated coherent and incoherent phonons to drive coherent spin dynamics, i.e. precession,... Read More about Contributions from coherent and incoherent lattice excitations to ultrafast optical control of magnetic anisotropy of metallic films.

Ultrafast changes of magnetic anisotropy driven by laser-generated coherent and noncoherent phonons in metallic films (2016)
Journal Article
Kats, V., Linnik, T., Salasyuk, A., Rushforth, A., Wang, M., Wadley, P., …Scherbakov, A. (2016). Ultrafast changes of magnetic anisotropy driven by laser-generated coherent and noncoherent phonons in metallic films. Physical Review B, 93(21), Article 214422. https://doi.org/10.1103/PhysRevB.93.214422

Ultrafast optical excitation of a metal ferromagnetic film results in a modification of the magnetocrystalline anisotropy and induces the magnetization precession. We consider two main contributions to these processes: an effect of noncoherent phonon... Read More about Ultrafast changes of magnetic anisotropy driven by laser-generated coherent and noncoherent phonons in metallic films.

Electrical switching of an antiferromagnet (2016)
Journal Article
Wadley, P., Howells, B., Železný, J., Andrews, C., Hills, V., Campion, R. P., …Jungwirth, T. (2016). Electrical switching of an antiferromagnet. Science, 351(6273), 587-590. https://doi.org/10.1126/science.aab1031

Antiferromagnets are hard to control by external magnetic fields because of the alternating directions of magnetic moments on individual atoms and the resulting zero net magnetization. However, relativistic quantum mechanics allows for generating cur... Read More about Electrical switching of an antiferromagnet.

Antiferromagnetic structure in tetragonal CuMnAs thin films (2015)
Journal Article
Wadley, P., Hills, V. A., Shahedkhah, M. R., Edmonds, K. W., Campion, R. P., Novák, V., …Jungwirth, T. (2015). Antiferromagnetic structure in tetragonal CuMnAs thin films. Scientific Reports, 5(1), Article 17079. https://doi.org/10.1038/srep17079

Tetragonal CuMnAs is an antiferromagnetic material with favourable properties for applications in spintronics. Using a combination of neutron diffraction and x-ray magnetic linear dichroism, we determine the spin axis and magnetic structure in tetrag... Read More about Antiferromagnetic structure in tetragonal CuMnAs thin films.

Magnetic coupling in ferromagnetic semiconductor (Ga,Mn)As/(Al,Ga,Mn)As bilayers (2015)
Journal Article
Wang, M., Wadley, P., Campion, R. P., Rushforth, A. W., Edmonds, K. W., Gallagher, B. L., …Langridge, S. (2015). Magnetic coupling in ferromagnetic semiconductor (Ga,Mn)As/(Al,Ga,Mn)As bilayers. Journal of Applied Physics, 118(5), Article 053913. https://doi.org/10.1063/1.4928206

We report on a study of ferromagnetic semiconductor (Ga,Mn)As/(Al,Ga,Mn)As bilayers using magnetometry and polarized neutron reflectivity (PNR). From depth-resolved characterization of the magnetic structure obtained by PNR, we concluded that the (Ga... Read More about Magnetic coupling in ferromagnetic semiconductor (Ga,Mn)As/(Al,Ga,Mn)As bilayers.

Comparison of micromagnetic parameters of the ferromagnetic semiconductors (Ga,Mn)(As,P) and (Ga,Mn)As (2014)
Journal Article
Tesařová, N., Butkovičová, D., Campion, R. P., Rushforth, A. W., Edmonds, K. W., Wadley, P., …Němec, P. (2014). Comparison of micromagnetic parameters of the ferromagnetic semiconductors (Ga,Mn)(As,P) and (Ga,Mn)As. Physical review B: Condensed matter and materials physics, 90(15), Article 155203. https://doi.org/10.1103/physrevb.90.155203

We report on the determination of micromagnetic parameters of epilayers of the ferromagnetic semiconductor (Ga,Mn)As, which has an easy axis in the sample plane, and (Ga,Mn)(As,P), which has an easy axis perpendicular to the sample plane.We use an op... Read More about Comparison of micromagnetic parameters of the ferromagnetic semiconductors (Ga,Mn)(As,P) and (Ga,Mn)As.

Room-temperature antiferromagnetic memory resistor (2014)
Journal Article
Marti, X., Fina, I., Frontera, C., Liu, J., Wadley, P., He, Q., …Ramesh, R. (2014). Room-temperature antiferromagnetic memory resistor. Nature Materials, 13(4), 367-374. https://doi.org/10.1038/nmat3861

The bistability of ordered spin states in ferromagnets provides the basis for magnetic memory functionality. The latest generation of magnetic random access memories rely on an efficient approach in which magnetic fields are replaced by electrical me... Read More about Room-temperature antiferromagnetic memory resistor.