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Effects of substrate material on the electrical properties of self-assembled InAs quantum dots-based laser structures (2023)
Journal Article
Al Huwayz, M., Jameel, D. A., Alotaibi, S., Alhassan, S., Almalki, A., Al Saqri, N., …Henini, M. (2023). Effects of substrate material on the electrical properties of self-assembled InAs quantum dots-based laser structures. Applied Physics A, 129(6), Article 405. https://doi.org/10.1007/s00339-023-06626-w

In this work, the effects of the substrate material on the electrical properties of self-assembled InAs quantum dots (QDs)-based laser structures have been reported. Two InAs QD laser structures with the same active regions deposited on GaAs and Si s... Read More about Effects of substrate material on the electrical properties of self-assembled InAs quantum dots-based laser structures.

Preparation and Optical Properties of PVDF-CaFe2O4 Polymer Nanocomposite Films (2023)
Journal Article
Alhassan, S., Alshammari, M., Alshammari, K., Alotaibi, T., Alshammari, A. H., Fawaz, Y., …Henini, M. (2023). Preparation and Optical Properties of PVDF-CaFe2O4 Polymer Nanocomposite Films. Polymers, 15(9), Article 2232. https://doi.org/10.3390/polym15092232

In this work, a synthesis technique for highly homogeneous PVDF-CaFe2O4 polymer films direct from solution was developed. The structural characterizations were conducted using XRD, FTIR, and ESEM experimental techniques. The XRD characteristic peaks... Read More about Preparation and Optical Properties of PVDF-CaFe2O4 Polymer Nanocomposite Films.

Synthesis and optical properties of polyvinylidene difluoride nanocomposites comprising MoO3/g-C3N4 (2023)
Journal Article
Alhassan, S., Alshammari, K., Alshammari, M., Alotaibi, T., Alshammari, A. H., Fawaz, Y., …Henini, M. (2023). Synthesis and optical properties of polyvinylidene difluoride nanocomposites comprising MoO3/g-C3N4. Results in Physics, 48, Article 106403. https://doi.org/10.1016/j.rinp.2023.106403

The present study describes the optical properties for prepared polymer nanocomposites of PVDF at different content of MoO3/g-C3N4. The structural properties of polymer films were analysed via XRD, FTIR and ESEM techniques. The XRD diffraction patter... Read More about Synthesis and optical properties of polyvinylidene difluoride nanocomposites comprising MoO3/g-C3N4.

Room Temperature Surface Bio-Sulfurisation via Natural Sativum Annilin and Bioengineering of Nanostructured CuS/Cu2S (2023)
Journal Article
Welegergs, G., Numan, N., Dube, S., Nuru, Z., Botha, N., Cloete, K., …Maaza, M. (2023). Room Temperature Surface Bio-Sulfurisation via Natural Sativum Annilin and Bioengineering of Nanostructured CuS/Cu2S. Nano-Horizons: Journal of Nanosciences and Nanotechnologies, 1, 1-27. https://doi.org/10.25159/nanohorizons.45486dad4f94

In this contribution, we report, for the first time, on the surface bio-sulfurisation of metallic surfaces at room temperature via natural sativum annilin. More precisely, this bio-sulfurisation is validated on bioengineered nanostructured Cu2-XS sur... Read More about Room Temperature Surface Bio-Sulfurisation via Natural Sativum Annilin and Bioengineering of Nanostructured CuS/Cu2S.

Investigation of structural and electrical properties of ITO thin films and correlation to optical parameters extracted using novel method based on PSO algorithm (2023)
Journal Article
Amrani, R., Garoudja, E., Lekoui, F., Filali, W., Neggaz, H., Djebeli, Y. A., …Henini, M. (2023). Investigation of structural and electrical properties of ITO thin films and correlation to optical parameters extracted using novel method based on PSO algorithm. Bulletin of Materials Science, 46(1), Article 8. https://doi.org/10.1007/s12034-022-02845-8

Thermally annealed DC sputtered indium tin oxide (ITO) thin films were investigated for improvement in properties. The structural and optoelectronic characteristics of as-grown and air annealed films were studied and correlated to the film deposition... Read More about Investigation of structural and electrical properties of ITO thin films and correlation to optical parameters extracted using novel method based on PSO algorithm.

Peculiar Size Effects in Nanoscaled Systems (2022)
Journal Article
Maaza, M., Henini, M., Ezema, F., Manikandan, E., Kennedy, J., Bouziane, K., …Akbari, M. (2022). Peculiar Size Effects in Nanoscaled Systems. Nano-Horizons: Journal of Nanosciences and Nanotechnologies, 1, https://doi.org/10.25159/nanohorizons.9d53e2220e3

In this minireview, we intend to shed light on relatively recent examples related to the size and shape effects on materials at the nanoscale and their usage to test a set of quantum mechanics governed phenomena.

Current-induced degradation behaviors of InGaN/GaN multiple quantum well UV photodetectors: Role of electrically active defects (2022)
Journal Article
Dalapati, P., Almalki, A., Alhassan, S., Alotaibi, S., Huwayz, M. A., Nakabayashi, T., …Henini, M. (2022). Current-induced degradation behaviors of InGaN/GaN multiple quantum well UV photodetectors: Role of electrically active defects. Sensors and Actuators A: Physical, 347, Article 113935. https://doi.org/10.1016/j.sna.2022.113935

To examine the critical role of electrically active defects and surface states in InGaN/GaN multiple quantum well (MQW) ultraviolet photodetectors (UV-PDs), the study of degradation mechanisms in such devices is very important. In this work, we have... Read More about Current-induced degradation behaviors of InGaN/GaN multiple quantum well UV photodetectors: Role of electrically active defects.

Optical properties of self-assembled InAs quantum dots based P–I–N structures grown on GaAs and Si substrates by Molecular Beam Epitaxy (2022)
Journal Article
Al Huwayz, M., Galeti, H., Lemine, O. M., Ibnaouf, K. H., Alkaoud, A., Alaskar, Y., …Henini, M. (2022). Optical properties of self-assembled InAs quantum dots based P–I–N structures grown on GaAs and Si substrates by Molecular Beam Epitaxy. Journal of Luminescence, 251, Article 119155. https://doi.org/10.1016/j.jlumin.2022.119155

Extensive work on InAs quantum dots grown on GaAs substrates has been reported in the literature. However, research in the use of different substrate materials such as silicon to achieve an ideal and full integration of photonic and electronic system... Read More about Optical properties of self-assembled InAs quantum dots based P–I–N structures grown on GaAs and Si substrates by Molecular Beam Epitaxy.

A novel approach for engineering efficient nanofluids by radiolysis (2022)
Journal Article
Maaza, M., Khamliche, T., Akbari, M., Kana, N., Tandjigora, N., Beukes, P., …Henini, M. (2022). A novel approach for engineering efficient nanofluids by radiolysis. Scientific Reports, 12, Article 10767. https://doi.org/10.1038/s41598-022-14540-z

This contribution reports for the first time the possibility of using radiolysis to engineer stable efficient nanofluids which exhibit an enhanced thermal conductivity. The validation was confirmed on Ag-H2O and Ag-C2H6O2 nanofluids fabricated via g-... Read More about A novel approach for engineering efficient nanofluids by radiolysis.

Structural, Optical and Electrical Properties of Self-Assembled InAs Quantum Dots Based p–i–n Devices Grown on GaAs Substrate by Molecular Beam Epitaxy for Telecommunication Applications (2022)
Journal Article
Lemine, O. M., Al Huwayz, M., Ibnaouf, K. H., Alkaoud, A., Salhi, A., & Henini, M. (2022). Structural, Optical and Electrical Properties of Self-Assembled InAs Quantum Dots Based p–i–n Devices Grown on GaAs Substrate by Molecular Beam Epitaxy for Telecommunication Applications. Journal of Nanoelectronics and Optoelectronics, 17(5), 837-842. https://doi.org/10.1166/jno.2022.3258

This work aims to investigate the structural, electrical, and optical properties of InAs quantum dots (QDs) grown by Molecular Beam Epitaxy on GaAs substrates. As-made samples were thoroughly characterized using different techniques, including Atomic... Read More about Structural, Optical and Electrical Properties of Self-Assembled InAs Quantum Dots Based p–i–n Devices Grown on GaAs Substrate by Molecular Beam Epitaxy for Telecommunication Applications.

Schottky contact diameter effect on the electrical properties and interface states of Ti/Au/p-AlGaAs/GaAs/Au/Ni/Au Be-doped p-type MBE Schottky diodes (2022)
Journal Article
Lakhdari, I., Sengouga, N., Labed, M., Tibermacine, T., Mari, R., & Henini, M. (2022). Schottky contact diameter effect on the electrical properties and interface states of Ti/Au/p-AlGaAs/GaAs/Au/Ni/Au Be-doped p-type MBE Schottky diodes. Semiconductor Science and Technology, 37(5), Article 055022. https://doi.org/10.1088/1361-6641/ac612a

Schottky diodes based on Be-doped p-type AlGaAs were grown by molecular beam epitaxy (MBE) and their current-voltage (I-V) and capacitance-voltage (C-V) characteristics measured. The Schottky and Ohmic contacts are Ti/Au and Au/Ni/Au, respectively. T... Read More about Schottky contact diameter effect on the electrical properties and interface states of Ti/Au/p-AlGaAs/GaAs/Au/Ni/Au Be-doped p-type MBE Schottky diodes.

Mercury goes Solid at room temperature at nanoscale and a potential Hg waste storage (2022)
Journal Article
Kana, N., Morad, R., Akbari, M., Henini, M., Niemela, J., Hacque, F., …Maaza, M. (2022). Mercury goes Solid at room temperature at nanoscale and a potential Hg waste storage. Scientific Reports, 12(1), Article 3494. https://doi.org/10.1038/s41598-022-06857-6

While room temperature bulk mercury is liquid, it is solid in its nano-configuration (Ønano-Hg ≤ 2.5 nm). Conjugating the nano-scale size effect and the Laplace driven surface excess pressure, Hg nanoparticles of Ønano-Hg ≤ 2.4 nm embedded in a 2-D t... Read More about Mercury goes Solid at room temperature at nanoscale and a potential Hg waste storage.

From Khoi-San indigenous knowledge to bioengineered CeO2 nanocrystals to exceptional UV-blocking green nanocosmetics (2022)
Journal Article
Sintwa, N., Ditlopo, N., Khamlich, S., Manikandan, E., Gnanasekaran, K., Henini, M., …Maaza, M. (2022). From Khoi-San indigenous knowledge to bioengineered CeO2 nanocrystals to exceptional UV-blocking green nanocosmetics. Scientific Reports, 12(1), Article 3468. https://doi.org/10.1038/s41598-022-06828-x

Single phase CeO2 nanocrystals were bio-synthesized using Hoodia gordonii natural extract as an effective chelating agent. The nanocrystals with an average diameter of 〈Ø〉 ~ 5–26 nm with 4+ electronic valence of Ce displayed a remarkable UV selecti... Read More about From Khoi-San indigenous knowledge to bioengineered CeO2 nanocrystals to exceptional UV-blocking green nanocosmetics.

Analysis of I–V-T characteristics of Be-doped AlGaAs Schottky diodes grown on (100) GaAs substrates by molecular beam epitaxy (2022)
Journal Article
Oussalah, S., Filali, W., Garoudja, E., Zatout, B., Lekoui, F., Amrani, R., …Henini, M. (2022). Analysis of I–V-T characteristics of Be-doped AlGaAs Schottky diodes grown on (100) GaAs substrates by molecular beam epitaxy. Microelectronics Journal, 122, Article 105409. https://doi.org/10.1016/j.mejo.2022.105409

The temperature effect on the electrical characteristics of Au/Ti on Beryllium-doped Al0.29Ga0.71As Schottky diodes grown on (100) GaAs substrates by molecular beam epitaxy has been investigated for various temperatures ranging from 260 to 400 K. By... Read More about Analysis of I–V-T characteristics of Be-doped AlGaAs Schottky diodes grown on (100) GaAs substrates by molecular beam epitaxy.

On the trapping of neutrons in Fabry–Pérot nano-structures and potential applications for cold neutron lifetime Investigations (2022)
Journal Article
Maaza, M., Pardo, B., Hamidi, D., Akbari, M., Morad, R., Henini, M., & Gibaud, A. (2023). On the trapping of neutrons in Fabry–Pérot nano-structures and potential applications for cold neutron lifetime Investigations. Journal of Neutron Research, 25(1), 13-28. https://doi.org/10.3233/jnr-220015

Correlated to the neutron total reflection phenomenon is the so-called frustrated total reflection, also known as neutron channeling, observed with both thermal and cold neutrons. Within this contribution, such a phenomenon is validated in various ad... Read More about On the trapping of neutrons in Fabry–Pérot nano-structures and potential applications for cold neutron lifetime Investigations.

Effect of bismuth surfactant on the structural, morphological and optical properties of self-assembled InGaAs quantum dots grown by Molecular Beam Epitaxy on GaAs (001) substrates (2022)
Journal Article
Alghamdi, H., Alhassni, A., Alhassan, S., Almunyif, A., Klekovkin, A. V., Trunkin, I. N., …Henini, M. (2022). Effect of bismuth surfactant on the structural, morphological and optical properties of self-assembled InGaAs quantum dots grown by Molecular Beam Epitaxy on GaAs (001) substrates. Journal of Alloys and Compounds, 905, Article 164015. https://doi.org/10.1016/j.jallcom.2022.164015

In this work, we have investigated the effect of Bi surfactant on structural, morphological and optical properties of 5 monolayers self-assembled InGaAs quantum dots (QDs) grown on GaAs (001) substrates at various growth temperatures (435, 467 and 49... Read More about Effect of bismuth surfactant on the structural, morphological and optical properties of self-assembled InGaAs quantum dots grown by Molecular Beam Epitaxy on GaAs (001) substrates.

Optimal Identification of Be-Doped Al0.29Ga0.71As Schottky Diode Parameters Using Dragonfly Algorithm: A Thermal Effect Study (2021)
Journal Article
Filali, W., Amrani, R., Garoudja, E., Oussalah, S., Lekoui, F., Oukerimi, Z., …Henini, M. (2021). Optimal Identification of Be-Doped Al0.29Ga0.71As Schottky Diode Parameters Using Dragonfly Algorithm: A Thermal Effect Study. Superlattices and Microstructures, 160, Article 107085. https://doi.org/10.1016/j.spmi.2021.107085

In this work, a recent heuristic method called Dragonfly Algorithm (DA) has been employed for the first time to investigate the temperature effect on the Schottky diode electrical parameters. Beryllium-doped Al0.29Ga0.71As Schottky diodes grown by mo... Read More about Optimal Identification of Be-Doped Al0.29Ga0.71As Schottky Diode Parameters Using Dragonfly Algorithm: A Thermal Effect Study.

Transformation of polarons into magnetopolarons in GaAs quantum well (2021)
Journal Article
Popov, V. G., Krishtop, V. G., Henini, M., & Portal, J. C. (2022). Transformation of polarons into magnetopolarons in GaAs quantum well. Physica E: Low-dimensional Systems and Nanostructures, 136, Article 115019. https://doi.org/10.1016/j.physe.2021.115019

An experimental study is made of electron tunneling in a resonant-tunneling diode in magnetic fields directed parallel and perpendicular to the planes of the GaAs/Al xGa1-XAs heterostructure layers. In particular, phonon replicas on the current–volta... Read More about Transformation of polarons into magnetopolarons in GaAs quantum well.

Investigation of the Effect of Substrate Orientation on the Structural, Electrical and Optical Properties of n-type GaAs1-xBix Layers Grown by Molecular Beam Epitaxy (2021)
Journal Article
Alhassan, S., de Souza, D., Alhassni, A., Almunyif, A., Alotaibi, S., Almalki, A., …Henini, M. (2021). Investigation of the Effect of Substrate Orientation on the Structural, Electrical and Optical Properties of n-type GaAs1-xBix Layers Grown by Molecular Beam Epitaxy. Journal of Alloys and Compounds, 885, Article 161019. https://doi.org/10.1016/j.jallcom.2021.161019

Current-Voltage (I-V), Capacitance-Voltage (C-V), Deep Level Transient Spectroscopy (DLTS), Laplace DLTS, Photoluminescence (PL) and Micro-Raman techniques have been employed to investigate the effect of the orientation of the substrates on the struc... Read More about Investigation of the Effect of Substrate Orientation on the Structural, Electrical and Optical Properties of n-type GaAs1-xBix Layers Grown by Molecular Beam Epitaxy.

Structural And Optical Properties Of n-Type and p-Type GaAs(1−x)Bix Thin Films Grown By Molecular Beam Epitaxy On (311)B GaAs Substrates (2021)
Journal Article
de Souza, D., Alhassan, S., Alotaibi, S., Alhassni, A., Almunyif, A., Kazakov, I. P., …Henini, M. (2021). Structural And Optical Properties Of n-Type and p-Type GaAs(1−x)Bix Thin Films Grown By Molecular Beam Epitaxy On (311)B GaAs Substrates. Semiconductor Science and Technology, 36(7), Article 075018. https://doi.org/10.1088/1361-6641/abf3d1

In this paper, we report on the structural and optical properties of n-type Si-doped and p-type Be-doped GaAs(1−x)Bix thin films grown by molecular beam epitaxy on (311)B GaAs substrates with nominal Bi content x=5.4%. Similar samples without Bi were... Read More about Structural And Optical Properties Of n-Type and p-Type GaAs(1−x)Bix Thin Films Grown By Molecular Beam Epitaxy On (311)B GaAs Substrates.