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Microstructural Response of Highly Porous Sintered Nano-silver Particle Die Attachments to Thermomechanical Cycling (2024)
Journal Article
Agyakwa, P. A., Robertson, S., Dai, J., Mouawad, B., Zhou, Z., Liu, C., & Johnson, C. M. (2024). Microstructural Response of Highly Porous Sintered Nano-silver Particle Die Attachments to Thermomechanical Cycling. Journal of Electronic Materials, 53, 1374–1398. https://doi.org/10.1007/s11664-023-10870-4

This paper deals with the performance of sintered nano-silver bonds used as wide-bandgap power module die attachment technology. The paper specifically explores the fine-scale microstructures of highly porous sintered attachments under power cycling... Read More about Microstructural Response of Highly Porous Sintered Nano-silver Particle Die Attachments to Thermomechanical Cycling.

Development and Validation of a Smart Architecture for Thyristor Valves (2023)
Journal Article
Sala, G., De Bonis, G., Costabeber, A., Tani, A., Johnson, C. M., & Clare, J. C. (2023). Development and Validation of a Smart Architecture for Thyristor Valves. IEEE Journal of Emerging and Selected Topics in Power Electronics, 11(4), 4068-4076. https://doi.org/10.1109/JESTPE.2023.3262344

A high voltage thyristor converter is realized by many valve sections, whose volume is approximately occupied for only the 10% by thyristors and for the 10% by the relevant gate drivers. The remaining 80% is taken by passive auxiliary circuits, neede... Read More about Development and Validation of a Smart Architecture for Thyristor Valves.

Reliability and Characterization of Nanosilver Joints Prepared by a Time-Reduced Sintering Process (2021)
Journal Article
Dai, J., Li, J., Agyakwa, P., Corfield, M., & Johnson, C. M. (2021). Reliability and Characterization of Nanosilver Joints Prepared by a Time-Reduced Sintering Process. IEEE Transactions on Device and Materials Reliability, 21(4), 536-543. https://doi.org/10.1109/TDMR.2021.3118323

This study investigates the power cycling reliability of nanosilver sintered joints formed by a time-reduced sintering process, designed for use on a die bonder. A range of sintering parameters, reflecting different levels of manufacturability, were... Read More about Reliability and Characterization of Nanosilver Joints Prepared by a Time-Reduced Sintering Process.

A GaN-HEMT Compact Model Including Dynamic RDSon Effect for Power Electronics Converters (2021)
Journal Article
Li, K., Evans, P. L., Johnson, C. M., Videt, A., & Idir, N. (2021). A GaN-HEMT Compact Model Including Dynamic RDSon Effect for Power Electronics Converters. Energies, 14(8), Article 2092. https://doi.org/10.3390/en14082092

In order to model GaN-HEMT switching transients and determine power losses, a compact model including dynamic RDSon effect is proposed herein. The model includes mathematical equations to represent device static and capacitance-voltage characteristic... Read More about A GaN-HEMT Compact Model Including Dynamic RDSon Effect for Power Electronics Converters.

Multi?frequency averaging (MFA) model of a generic electric vehicle powertrain suitable under variable frequency of averaging developed for remote operability (2020)
Journal Article
Sen, S., Evans, P. L., & Johnson, C. M. (2020). Multi?frequency averaging (MFA) model of a generic electric vehicle powertrain suitable under variable frequency of averaging developed for remote operability. IET Electrical Systems in Transportation, 10(3), 268-274. https://doi.org/10.1049/iet-est.2019.0043

© The Institution of Engineering and Technology 2020. Geographically distributed hardware-in-the-loop (HIL) testing has the potential to allow hybrid vehicle powertrain components (battery, motor drive, and engine) to be developed at geographically r... Read More about Multi?frequency averaging (MFA) model of a generic electric vehicle powertrain suitable under variable frequency of averaging developed for remote operability.

Accurate Measurement of Dynamic ON-state Resistance of GaN Devices under Reverse and Forward Conduction in High Frequency Power Converter (2020)
Journal Article
Li, K., Videt, A., Idir, N., Evans, P., & Johnson, M. (2020). Accurate Measurement of Dynamic ON-state Resistance of GaN Devices under Reverse and Forward Conduction in High Frequency Power Converter. IEEE Transactions on Power Electronics, 35(9), 9652-9662. https://doi.org/10.1109/TPEL.2019.2961604

Because of trapped charges in GaN transistor structure, device dynamic ON-state resistance RDSon is increased when it is operated in high frequency switched power converters, in which device is possibly operated by zero voltage switching (ZVS) to red... Read More about Accurate Measurement of Dynamic ON-state Resistance of GaN Devices under Reverse and Forward Conduction in High Frequency Power Converter.

10-kV SiC MOSFET Power Module With Reduced Common-Mode Noise and Electric Field (2019)
Journal Article
DiMarino, C. M., Mouawad, B., Johnson, C. M., Boroyevich, D., & Burgos, R. (2020). 10-kV SiC MOSFET Power Module With Reduced Common-Mode Noise and Electric Field. IEEE Transactions on Power Electronics, 35(6), 6050-6060. https://doi.org/10.1109/tpel.2019.2952633

The advancement of silicon carbide (SiC) power devices with voltage ratings exceeding 10 kV is expected to revolutionize medium- and high-voltage systems. However, present power module packages are limiting the performance of these unique switches. T... Read More about 10-kV SiC MOSFET Power Module With Reduced Common-Mode Noise and Electric Field.

Design and Experimental Validation of a Wire-Bond-Less 10-kV SiC MOSFET Power Module (2019)
Journal Article
DiMarino, C., Mouawad, B., Johnson, C. M., Wang, M., Tan, Y., Lu, G., …Burgos, R. (2020). Design and Experimental Validation of a Wire-Bond-Less 10-kV SiC MOSFET Power Module. IEEE Journal of Emerging and Selected Topics in Power Electronics, 8(1), 381-394. https://doi.org/10.1109/jestpe.2019.2944138

Wide bandgap (WBG) power devices with voltage ratings exceeding 10 kV have the potential to revolutionize medium-and high-voltage systems due to their high-speed switching and lower ON-state losses. However, the present power module packages are limi... Read More about Design and Experimental Validation of a Wire-Bond-Less 10-kV SiC MOSFET Power Module.

Three‐dimensional damage morphologies of thermomechanically deformed sintered nanosilver die attachments for power electronics modules (2019)
Journal Article
Agyakwa, P., Dai, J., Li, J., Mouawad, B., Yang, L., Corfield, M., & Johnson, C. (2019). Three‐dimensional damage morphologies of thermomechanically deformed sintered nanosilver die attachments for power electronics modules. Journal of Microscopy, 277(3), 140-153. https://doi.org/10.1111/jmi.12803

© 2019 The Authors. Journal of Microscopy published by John Wiley & Sons Ltd on behalf of Royal Microscopical Society. A time-lapse study of thermomechanical fatigue damage has been undertaken using three-dimensional X-ray computer tomography. Morp... Read More about Three‐dimensional damage morphologies of thermomechanically deformed sintered nanosilver die attachments for power electronics modules.

Study of a Silicon Carbide MOSFET Power Module to Establish the Benefits of Adding Anti-parallel Schottky Diodes (2018)
Conference Proceeding
Trentin, A., Hind, D., Degano, M., Tighe, C., Arevalo, S. L., Yang, L., …Packwood, M. (2018). Study of a Silicon Carbide MOSFET Power Module to Establish the Benefits of Adding Anti-parallel Schottky Diodes. In 2018 IEEE Energy Conversion Congress and Exposition (ECCE) (1829-1836). https://doi.org/10.1109/ECCE.2018.8557415

The majority of commercial Silicon Carbide (SiC) MOSFET based power modules available on the market today also include SiC Schottky diodes placed in anti-parallel with the MOSFETs. Using an accurate electrical and thermal simulation model this paper... Read More about Study of a Silicon Carbide MOSFET Power Module to Establish the Benefits of Adding Anti-parallel Schottky Diodes.

Multi-Frequency Averaging (MFA) Model of Electric-Hybrid Powertrain Suitable for Variable Frequency Operation Applied in Geographically-Distributed Power Hardware-in-the-Loop (GD-PHiL) Simulation (2018)
Conference Proceeding
Sen, S., Evans, P. L., & Johnson, C. M. (2018). Multi-Frequency Averaging (MFA) Model of Electric-Hybrid Powertrain Suitable for Variable Frequency Operation Applied in Geographically-Distributed Power Hardware-in-the-Loop (GD-PHiL) Simulation. In Proceedings - 2018 IEEE Vehicle Power and Propulsion Conference (VPPC) (1-6). https://doi.org/10.1109/VPPC.2018.8604967

© 2018 IEEE Project aims to develop capability for OEMs and suppliers to 'virtually-connect' multiple prototype powertrain components (engine, motor-drive etc.) and engage in real-time system simulation, thereby reducing cost by eliminating co-locati... Read More about Multi-Frequency Averaging (MFA) Model of Electric-Hybrid Powertrain Suitable for Variable Frequency Operation Applied in Geographically-Distributed Power Hardware-in-the-Loop (GD-PHiL) Simulation.

Packaging technology for a highly integrated 10kV SiC MOSFET module (2018)
Presentation / Conference
Mouawad, B., Di Marino, C., Li, J., Skuriat, R., & Johnson, M. (2018, August). Packaging technology for a highly integrated 10kV SiC MOSFET module. Paper presented at 14th International Seminar on Power Semiconductors (ISPS 2018), Prague, Czech Republic

High-voltage SiC devices offer an attractive combination of fast switching and low losses, giving application users unprecedented levels of flexibility in choice of topology and control strategy for medium- and high-voltage power conversion. However,... Read More about Packaging technology for a highly integrated 10kV SiC MOSFET module.

Development of a highly integrated 10 kV SiC MOSFET power module with a direct jet impingement cooling system (2018)
Conference Proceeding
Mouawad, B., Skuriat, R., Li, J., Johnson, C. M., & DiMarino, C. (2018). Development of a highly integrated 10 kV SiC MOSFET power module with a direct jet impingement cooling system. In 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD). https://doi.org/10.1109/ispsd.2018.8393651

This paper presents a novel, highly integrated packaging design for Wolfspeed’s 10 kV SiC MOSFETs. These devices offer faster switching performance and lower losses than silicon devices. However, it has been shown that the package can have profound i... Read More about Development of a highly integrated 10 kV SiC MOSFET power module with a direct jet impingement cooling system.

IEEE ITRW working group position paper: packaging and integration: unlocking the full potential of wide-bandgap devices (2018)
Journal Article
Johnson, M., Wilson, P. R., Empringham, L., & De Lillo, L. (2018). IEEE ITRW working group position paper: packaging and integration: unlocking the full potential of wide-bandgap devices. IEEE Power Electronics Magazine, 5(2), 26-33. https://doi.org/10.1109/mpel.2018.2822246

The International Technology Roadmap for Wide-Bandgap Power Semiconductors (ITRW) has four distinct technical working groups, each providing its own perspective on the technology and industrial drivers for the adoption of wide-bandgap (WBG) power sem... Read More about IEEE ITRW working group position paper: packaging and integration: unlocking the full potential of wide-bandgap devices.

A wire-bond-less 10 KV SiC MOSFET power module with reduced common-mode noise and electric field (2018)
Conference Proceeding
DiMarino, C., Mouawad, B., Skuriat, R., Li, K., Xu, Y., Johnson, C., …Burgos, R. (2018). A wire-bond-less 10 KV SiC MOSFET power module with reduced common-mode noise and electric field. In PCIM Europe 2018; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management

While wide-bandgap devices offer many benefits, they also bring new challenges for designers. In particular, the new 10 kV silicon carbide (SiC) MOSFETs can switch higher voltages faster and with lower losses than silicon devices while also being sma... Read More about A wire-bond-less 10 KV SiC MOSFET power module with reduced common-mode noise and electric field.

Cost effective direct-substrate jet impingement cooling concept for power application (2018)
Conference Proceeding
Mouawad, B., Abebe, R., Skuriat, R., Li, J., De Lillo, L., Empringham, L., …Haynes, G. (2018). Cost effective direct-substrate jet impingement cooling concept for power application. In PCIM Europe 2018; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management

Direct substrate jet impingement cooling can eliminate the use of the baseplate and significantly reduce the weight and volume of conventional thermal management solutions. This work demonstrates a cost-effective manufacturing approach based on print... Read More about Cost effective direct-substrate jet impingement cooling concept for power application.

Novel silicon carbide integrated power module for EV application (2018)
Conference Proceeding
Mouawad, B., Espina, J., Li, J., Empringham, L., & Johnson, C. M. (2018). Novel silicon carbide integrated power module for EV application. In IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia 2018), At Xi'an, Shaanxi

The successful penetration of Electric Vehicles (EVs) into the global automotive markets requires the developments of cost effective, high performance and high integration power electronic systems. The present work is concerned with the structural in... Read More about Novel silicon carbide integrated power module for EV application.

Next generation integrated drive: a novel thermal and electrical integration technique for high power density converters used in automotive drive systems (2018)
Conference Proceeding
Ahmadi, B., Espina, J., De Lillo, L., Abebe, R., Empringham, L., & Johnson, C. M. (2018). Next generation integrated drive: a novel thermal and electrical integration technique for high power density converters used in automotive drive systems.

In this paper, an innovative method of electro-thermal integration of a drive system is presented. Important challenges of this integration consist of, firstly coupled thermal design of switching power modules and PM electric motor and secondly integ... Read More about Next generation integrated drive: a novel thermal and electrical integration technique for high power density converters used in automotive drive systems.

Comparative Thermal and Structural Characterization of Sintered Nano-Silver and High-Lead Solder Die Attachments During Power Cycling (2018)
Journal Article
Dai, J., Li, J., Agyakwa, P., Corfield, M., & Johnson, C. M. (2018). Comparative Thermal and Structural Characterization of Sintered Nano-Silver and High-Lead Solder Die Attachments During Power Cycling. IEEE Transactions on Device and Materials Reliability, 18(2), 256-265. https://doi.org/10.1109/TDMR.2018.2825386

13.5 mm × 13.5 mm sintered nano-silver attachments for power devices onto AlN substrates were prepared at 250 ºC and a pressure of 10MPa for 5 minutes and compared with Pb5Sn solder joint die attachments under constant current power cycling with an i... Read More about Comparative Thermal and Structural Characterization of Sintered Nano-Silver and High-Lead Solder Die Attachments During Power Cycling.

Comparison of thermal and reliability performance between a SiC MOSFET module with embedded decoupling capacitors and commercial Si IGBT power modules (2018)
Conference Proceeding
Yang, L., Agyakwa, P., Corfield, M., Johnson, M., Harris, A., Packwood, M., & Paciura, K. (2018). Comparison of thermal and reliability performance between a SiC MOSFET module with embedded decoupling capacitors and commercial Si IGBT power modules.

This paper characterizes thermal and reliability performance of a SiC MOSFET power module with embedded decoupling capacitors and without anti-parallel diodes. Active and passive temperature cycling, supported by transient thermal impedance character... Read More about Comparison of thermal and reliability performance between a SiC MOSFET module with embedded decoupling capacitors and commercial Si IGBT power modules.