Performance evaluation of a new 30 ?m thick GaAs X-ray detector grown by MBE
(2021)
Journal Article
Lioliou, G., Poyser, C. L., Whale, J., Campion, R. P., Kent, A. J., & Barnett, A. (2021). Performance evaluation of a new 30 ?m thick GaAs X-ray detector grown by MBE. Materials Research Express, 8(2), Article 025909. https://doi.org/10.1088/2053-1591/abe73c
A circular mesa (400 μm diameter) GaAs p+-i-n+ photodiode with a 30 μm thick i layer was characterized for its performance as a detector in photon counting x-ray spectroscopy at 20 °C. The detector was fabricated from material grown by molecular beam... Read More about Performance evaluation of a new 30 ?m thick GaAs X-ray detector grown by MBE.