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Built-in reliability design of highly integrated solid-state power switches with metal bump interconnects (2014)
Journal Article
Li, J., Castellazzi, A., Dai, T., Corfield, M., Solomon, A. K., & Johnson, C. M. (2015). Built-in reliability design of highly integrated solid-state power switches with metal bump interconnects. IEEE Transactions on Power Electronics, 30(5), https://doi.org/10.1109/TPEL.2014.2357334

A stacked substrate–chip–bump–chip–substrate assembly has been demonstrated in the construction of power switch modules with high power density and good electrical performance. In this paper, special effort has been devoted to material selection and... Read More about Built-in reliability design of highly integrated solid-state power switches with metal bump interconnects.

Bonding strength of multiple SiC die attachment prepared by sintering of Ag nanoparticles (2014)
Journal Article
Li, J., Johnson, C. M., Buttay, C., Sabbah, W., & Azzopardi, S. (2015). Bonding strength of multiple SiC die attachment prepared by sintering of Ag nanoparticles. Journal of Materials Processing Technology, 215, 299-308. https://doi.org/10.1016/j.jmatprotec.2014.08.002

3 mm × 3 mm dummy SiC dies with 100\200\200 nm thick Ti\W\Au metallization have simultaneously been attached using sintering of Ag nanoparticle paste on AlN-based direct bonded copper substrates with 5\0.1 μm thick NiP\Au finish. The effect of prepar... Read More about Bonding strength of multiple SiC die attachment prepared by sintering of Ag nanoparticles.

Built-in reliability design of a high-frequency SiC MOSFET power module (2014)
Conference Proceeding
Li, J., Gurpinar, E., Lopez Arevalo, S., Castellazzi, A., & Mills, L. (in press). Built-in reliability design of a high-frequency SiC MOSFET power module.

A high frequency SiC MOSFET-based three-phase, 2-level power module has been designed, simulated, assembled and tested. The design followed a built-in reliability approach, involving extensive finite-element simulation based analysis of the electro-t... Read More about Built-in reliability design of a high-frequency SiC MOSFET power module.

Integrated Half-Bridge Switch Using 70- ?m-Thin Devices and Hollow Interconnects (2014)
Journal Article
Solomon, A. K., Li, J., Castellazzi, A., & Johnson, C. M. (2015). Integrated Half-Bridge Switch Using 70- ?m-Thin Devices and Hollow Interconnects. IEEE Transactions on Industry Applications, 51(1), 556-566. https://doi.org/10.1109/TIA.2014.2334734

An application-oriented integration concept for a half-bridge switch assembly has been developed based on the latest generation 70- ?m-thin insulated gate bipolar transistors and diodes, which are rated at 600 V/200 A. This paper addresses the design... Read More about Integrated Half-Bridge Switch Using 70- ?m-Thin Devices and Hollow Interconnects.

Testing of a lightweight SiC power module for avionic applications (2014)
Conference Proceeding
Gurpinar, E., Lopez Arevalo, S., Li, J., De, D., Castellazzi, A., & Mills, L. (in press). Testing of a lightweight SiC power module for avionic applications.

Functional and performance tests of a three-phase, two-level power module based on CREE 1.2kV SiC MOSFETs for avionic applications is presented in this paper. SiC devices have superior properties over conventional Si devices at high voltage operation... Read More about Testing of a lightweight SiC power module for avionic applications.

Suitable Thicknesses of Base Metal and Interlayer, and Evolution of Phases for Ag/Sn/Ag Transient liquid-phase Joints Used for Power Die Attachment (2014)
Journal Article
Li, J., Agyakwa, P., & Johnson, C. (2014). Suitable Thicknesses of Base Metal and Interlayer, and Evolution of Phases for Ag/Sn/Ag Transient liquid-phase Joints Used for Power Die Attachment. Journal of Electronic Materials, 43(4), 983-995. https://doi.org/10.1007/s11664-013-2971-7

Real Si insulated gate bipolar transistors with conventional Ni/Ag metallization and dummy Si chips with thickened Ni/Ag metallization have both been bonded, at 250°C for 0 min, 40 min, and 640 min, to Ag foil electroplated with 2.7 μm and 6.8 μm thi... Read More about Suitable Thicknesses of Base Metal and Interlayer, and Evolution of Phases for Ag/Sn/Ag Transient liquid-phase Joints Used for Power Die Attachment.

Packaging/assembling technologies for a high performance SiC-based planar power module
Conference Proceeding
Li, J., Agyakwa, P., Evans, P., Johnson, C. M., Zhao, Y., Wu, Y., & Evans, K. (in press). Packaging/assembling technologies for a high performance SiC-based planar power module.

This work is to investigate the relevant packaging / assembling technologies for developing a SiC-based planar power module which is aimed to meet the requirements such as operating temperature of -60 °C to 200 °C, SiC devices connected to 540 V DC b... Read More about Packaging/assembling technologies for a high performance SiC-based planar power module.

Hybrid half-bridge package for high voltage application
Conference Proceeding
Mouawad, B., Li, J., Castellazzi, A., & Johnson, C. M. (in press). Hybrid half-bridge package for high voltage application.

3D power module structures allow for better cooling and lower parasitic inductances compared with the classical planar technology. In this paper, we present a hybrid half-bridge in a 3D packaging configuration, dedicated for high voltage application.... Read More about Hybrid half-bridge package for high voltage application.

Low parasitic inductance multi-chip SiC devices packaging technology
Conference Proceeding
Li, J., Mouawad, B., Castellazzi, A., Friedrichs, P., & Johnson, C. M. (in press). Low parasitic inductance multi-chip SiC devices packaging technology.

This paper presents a novel packaging structure which employs stacked substrate and flexible printed circuit board (PCB) to obtain very low parasitic inductance and hence feature high switching speed SiC power devices. A half-bridge module aimed at b... Read More about Low parasitic inductance multi-chip SiC devices packaging technology.

Selection of materials for IGBT modules to achieve stable short circuit failure behaviour
Conference Proceeding
Li, J., Yaqub, I., & Johnson, C. M. (in press). Selection of materials for IGBT modules to achieve stable short circuit failure behaviour.

IGBT modules which can fail to stable short circuit mode have great allocations in electricity network related fields. Sn3.5Ag solder joint and sintered Ag joint for the die attachment and Mo, Cu, Sn3.5Ag, Al and Ag foils for the top side insert mate... Read More about Selection of materials for IGBT modules to achieve stable short circuit failure behaviour.

Reliable integration of a high performance multi-chip half-bridge SiC power module
Conference Proceeding
Mouawad, B., Li, J., Castellazzi, A., & Johnson, C. M. (in press). Reliable integration of a high performance multi-chip half-bridge SiC power module.

Silicon carbide (SiC) devices have been adopted to push the boundaries further in terms of power density, conversion efficiency, switching speed or thermal capability. To have the benefit of such semiconductors, new packaging should be developed to m... Read More about Reliable integration of a high performance multi-chip half-bridge SiC power module.