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Natural optical activity as the origin of the large chiroptical properties in ?-conjugated polymer thin films (2020)
Journal Article
Wade, J., Hilfiker, J. N., Brandt, J. R., Liirò-Peluso, L., Wan, L., Shi, X., …Fuchter, M. J. (2020). Natural optical activity as the origin of the large chiroptical properties in π-conjugated polymer thin films. Nature Communications, 11(1), Article 6137. https://doi.org/10.1038/s41467-020-19951-y

Polymer thin films that emit and absorb circularly polarised light have been demonstrated with the promise of achieving important technological advances; from efficient, high-performance displays, to 3D imaging and all-organic spintronic devices. How... Read More about Natural optical activity as the origin of the large chiroptical properties in ?-conjugated polymer thin films.

Identifying carbon as the source of visible single-photon emission from hexagonal boron nitride (2020)
Journal Article
Mendelson, N., Chugh, D., Reimers, J. R., Cheng, T. S., Gottscholl, A., Long, H., …Aharonovich, I. (2021). Identifying carbon as the source of visible single-photon emission from hexagonal boron nitride. Nature Materials, 20(3), 321-328. https://doi.org/10.1038/s41563-020-00850-y

Single-photon emitters (SPEs) in hexagonal boron nitride (hBN) have garnered increasing attention over the last few years due to their superior optical properties. However, despite the vast range of experimental results and theoretical calculations,... Read More about Identifying carbon as the source of visible single-photon emission from hexagonal boron nitride.

High open-circuit voltage in transition metal dichalcogenide solar cells (2020)
Journal Article
Svatek, S. A., Bueno-Blanco, C., Lin, D., Kerfoot, J., Macías, C., Zehender, M. H., …Antolín, E. (2021). High open-circuit voltage in transition metal dichalcogenide solar cells. Nano Energy, 79, Article 105427. https://doi.org/10.1016/j.nanoen.2020.105427

The conversion efficiency of ultra-thin solar cells based on layered materials has been limited by their open-circuit voltage, which is typically pinned to a value under 0.6 V. Here we report an open-circuit voltage of 1.02 V in a 120 nm-thick vertic... Read More about High open-circuit voltage in transition metal dichalcogenide solar cells.

Fluorescence and Electroluminescence of J-Aggregated Polythiophene Monolayers on Hexagonal Boron Nitride (2020)
Journal Article
Kerfoot, J., Svatek, S. A., Korolkov, V. V., Taniguchi, T., Watanabe, K., Antolin, E., & Beton, P. H. (2020). Fluorescence and Electroluminescence of J-Aggregated Polythiophene Monolayers on Hexagonal Boron Nitride. ACS Nano, 14(10), 13886–13893. https://doi.org/10.1021/acsnano.0c06280

The photophysics of a semiconducting polymer is manipulated through molecular self-assembly on an insulating surface. Adsorption of polythiophene (PT) monolayers on hexagonal boron nitride (hBN) leads to a structurally induced planarization and a reb... Read More about Fluorescence and Electroluminescence of J-Aggregated Polythiophene Monolayers on Hexagonal Boron Nitride.

Atomic reconstruction in twisted bilayers of transition metal dichalcogenides (2020)
Journal Article
Weston, A., Zou, Y., Enaldiev, V., Summerfield, A., Clark, N., Z´olyomi, V., …Gorbachev, R. (2020). Atomic reconstruction in twisted bilayers of transition metal dichalcogenides. Nature Nanotechnology, 15(7), 592–597. https://doi.org/10.1038/s41565-020-0682-9

Van der Waals heterostructures form a unique class of layered artificial solids in which physical properties can be manipulated through controlled composition, order and relative rotation of adjacent atomic planes. Here we use atomic-resolution trans... Read More about Atomic reconstruction in twisted bilayers of transition metal dichalcogenides.

Step-Flow Growth of Graphene-Boron Nitride Lateral Heterostructures by Molecular Beam Epitaxy (2020)
Journal Article
Thomas, J., Bradford, J., Cheng, T. S., Summerfield, A., Wrigley, J., Mellor, C. J., …Beton, P. H. (2020). Step-Flow Growth of Graphene-Boron Nitride Lateral Heterostructures by Molecular Beam Epitaxy. 2D Materials, 7(3), Article 035014. https://doi.org/10.1088/2053-1583/ab89e7

Integration of graphene and hexagonal boron nitride (hBN) into lateral heterostructures has drawn focus due to the ability to broadly engineer the material properties. Hybrid monolayers with tuneable bandgaps have been reported, while the interface i... Read More about Step-Flow Growth of Graphene-Boron Nitride Lateral Heterostructures by Molecular Beam Epitaxy.

Resonant tunnelling into the two-dimensional subbands of InSe layers (2020)
Journal Article
Kudrynskyi, Z. R., Kerfoot, J., Mazumder, D., Greenaway, M. T., Vdovin, E. E., Makarovsky, O., …Patanè, A. (2020). Resonant tunnelling into the two-dimensional subbands of InSe layers. Communications Physics, 3, Article 16. https://doi.org/10.1038/s42005-020-0290-x

Two-dimensional (2D) van der Waals (vdW) crystals have attracted considerable interest for digital electronics beyond Si-based complementary metal oxide semiconductor technologies. Despite the transformative success of Si-based devices, there are lim... Read More about Resonant tunnelling into the two-dimensional subbands of InSe layers.