All Outputs (2)

Synthesis and characterization of WS2/graphene/SiC van der Waals heterostructures via WO3−x thin film sulfurization (2020)
Journal Article
Bradford, J., Shafiei, M., MacLeod, J., & Motta, N. (2020). Synthesis and characterization of WS2/graphene/SiC van der Waals heterostructures via WO3−x thin film sulfurization. Scientific Reports, 10, Article 17334. https://doi.org/10.1038/s41598-020-74024-w

Van der Waals heterostructures of monolayer transition metal dichalcogenides (TMDs) and graphene have attracted keen scientific interest due to the complementary properties of the materials, which have wide reaching technological applications. Direct... Read More about Synthesis and characterization of WS2/graphene/SiC van der Waals heterostructures via WO3−x thin film sulfurization.

Step-Flow Growth of Graphene-Boron Nitride Lateral Heterostructures by Molecular Beam Epitaxy (2020)
Journal Article
Thomas, J., Bradford, J., Cheng, T. S., Summerfield, A., Wrigley, J., Mellor, C. J., …Beton, P. H. (2020). Step-Flow Growth of Graphene-Boron Nitride Lateral Heterostructures by Molecular Beam Epitaxy. 2D Materials, 7(3), Article 035014. https://doi.org/10.1088/2053-1583/ab89e7

Integration of graphene and hexagonal boron nitride (hBN) into lateral heterostructures has drawn focus due to the ability to broadly engineer the material properties. Hybrid monolayers with tuneable bandgaps have been reported, while the interface i... Read More about Step-Flow Growth of Graphene-Boron Nitride Lateral Heterostructures by Molecular Beam Epitaxy.