30 μm thick GaAs X-ray p + -i-n + photodiode grown by MBE

Lioliou, G.; Poyser, C.L.; Butera, S.; Campion, R.P.; Kent, A.J.; Barnett, A.M.

doi:10.1016/j.nima.2019.162670

All Outputs (3)

Gating effects in antiferromagnetic CuMnAs (2019)
Journal Article
Grzybowski, M. J., Wadley, P., Edmonds, K. W., Campion, R. P., Dybko, K., Majewicz, M., …Dietl, T. (2019). Gating effects in antiferromagnetic CuMnAs. AIP Advances, 9(11), 1-5. https://doi.org/10.1063/1.5124354

Antiferromagnets (AFs) attract much attention due to their potential applications in spintronics. Both the electric current and the electric field are considered as tools suitable to control the properties and the Néel vector direction of AFs. Among... Read More about Gating effects in antiferromagnetic CuMnAs.

Thermal stability of interstitial and substitutional Mn in ferromagnetic (Ga,Mn)As (2019)
Journal Article
Lima, T. A. L., Wahl, U., Costa, A., Augustyns, V., Edmonds, K. W., Gallagher, B. L., …Pereira, L. M. C. (2019). Thermal stability of interstitial and substitutional Mn in ferromagnetic (Ga,Mn)As. Physical Review B, 100(14), Article 144409. https://doi.org/10.1103/physrevb.100.144409

© 2019 American Physical Society. In (Ga,Mn)As, a model dilute magnetic semiconductor, the electric and magnetic properties are strongly influenced by the lattice sites occupied by the Mn atoms. In particular, the highest Curie temperatures are achie... Read More about Thermal stability of interstitial and substitutional Mn in ferromagnetic (Ga,Mn)As.

30 μm thick GaAs X-ray p + -i-n + photodiode grown by MBE (2019)
Journal Article
Lioliou, G., Poyser, C., Butera, S., Campion, R., Kent, A., & Barnett, A. (2019). 30 μm thick GaAs X-ray p + -i-n + photodiode grown by MBE. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 946, Article 162670. https://doi.org/10.1016/j.nima.2019.162670

7 8 A GaAs p +-in + photodiode detector with a 30 μm thick i layer and a 400 μm diameter was processed using 9 standard wet chemical etching from material grown by molecular beam epitaxy. The detector was 10 characterized for its electrical and photo... Read More about 30 μm thick GaAs X-ray p + -i-n + photodiode grown by MBE.