Development of a highly integrated 10 kV SiC MOSFET power module with a direct jet impingement cooling system
(2018)
Conference Proceeding
Mouawad, B., Skuriat, R., Li, J., Johnson, C. M., & DiMarino, C. (2018). Development of a highly integrated 10 kV SiC MOSFET power module with a direct jet impingement cooling system. In 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD). https://doi.org/10.1109/ispsd.2018.8393651
This paper presents a novel, highly integrated packaging design for Wolfspeed’s 10 kV SiC MOSFETs. These devices offer faster switching performance and lower losses than silicon devices. However, it has been shown that the package can have profound i... Read More about Development of a highly integrated 10 kV SiC MOSFET power module with a direct jet impingement cooling system.