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Electrically induced and detected Néel vector reversal in a collinear antiferromagnet (2018)
Journal Article
Godinho, J., Reichlová, H., Kriegner, D., Novák, V., Olejník, K., Kašpar, Z., …Wunderlich, J. (2018). Electrically induced and detected Néel vector reversal in a collinear antiferromagnet. Nature Communications, 9(1), Article 4686. https://doi.org/10.1038/s41467-018-07092-2

© 2018, The Author(s). Antiferromagnets are enriching spintronics research by many favorable properties that include insensitivity to magnetic fields, neuromorphic memory characteristics, and ultra-fast spin dynamics. Designing memory devices with el... Read More about Electrically induced and detected Néel vector reversal in a collinear antiferromagnet.

Current polarity-dependent manipulation of antiferromagnetic domains (2018)
Journal Article
Wadley, P., Reimers, S., Grzybowski, M. J., Andrews, C., Wang, M., Chauhan, J., …Jungwirth, T. (2018). Current polarity-dependent manipulation of antiferromagnetic domains. Nature Nanotechnology, 13(5), 362-365. https://doi.org/10.1038/s41565-018-0079-1

Antiferromagnets have several favourable properties as active elements in spintronic devices, including ultra-fast dynamics, zero stray fields and insensitivity to external magnetic fields. Tetragonal CuMnAs is a testbed system in which the antiferro... Read More about Current polarity-dependent manipulation of antiferromagnetic domains.

Terahertz electrical writing speed in an antiferromagnetic memory (2018)
Journal Article
Olejník, K., Seifert, T., Kašpar, Z., Novák, V., Wadley, P., Campion, R. P., …Jungwirth, T. (2018). Terahertz electrical writing speed in an antiferromagnetic memory. Science Advances, 4(3), Article eaar3566. https://doi.org/10.1126/sciadv.aar3566

© 2018 American Association for the Advancement of Science. All rights reserved. The speed of writing of state-of-the-art ferromagnetic memories is physically limited by an intrinsic gigahertz threshold. Recently, realization of memory devices based... Read More about Terahertz electrical writing speed in an antiferromagnetic memory.

Writing and reading antiferromagnetic Mn2Au by Néel spin-orbit torques and large anisotropic magnetoresistance (2018)
Journal Article
Bodnar, S. Y., Šmejkal, L., Turek, I., Jungwirth, T., Gomonay, O., Sinova, J., …Jourdan, M. (2018). Writing and reading antiferromagnetic Mn2Au by Néel spin-orbit torques and large anisotropic magnetoresistance. Nature Communications, 9(1), Article 348. https://doi.org/10.1038/s41467-017-02780-x

Using antiferromagnets as active elements in spintronics requires the ability to manipulate and read-out the Néel vector orientation. Here we demonstrate for Mn2Au, a good conductor with a high ordering temperature suitable for applications, reproduc... Read More about Writing and reading antiferromagnetic Mn2Au by Néel spin-orbit torques and large anisotropic magnetoresistance.