Atomistic Simulations of the Efficiencies of Ge and Pt Ion Implantation into Graphene
(2018)
Journal Article
Åhlgren, E. H., Markevich, A., & Besley, E. (2018). Atomistic Simulations of the Efficiencies of Ge and Pt Ion Implantation into Graphene. Journal of Physical Chemistry C, 122(44), 25700-25708. https://doi.org/10.1021/acs.jpcc.8b07306
Recent success in the direct implantation of 74Ge+ ion, the heaviest atomic impurity to date, into monolayer graphene presents a general question of the efficiency of low-energy ion implantation technique for heavy atoms. A comparative computational... Read More about Atomistic Simulations of the Efficiencies of Ge and Pt Ion Implantation into Graphene.