Skip to main content

Research Repository

Advanced Search

All Outputs (6)

Lattice-Matched Epitaxial Graphene Grown on Boron Nitride (2017)
Journal Article
Davies, A., Albar, J., Summerfield, A., Thomas, J. C., Cheng, T. S., Korolkov, V. V., …Beton, P. H. (2018). Lattice-Matched Epitaxial Graphene Grown on Boron Nitride. Nano Letters, 18(1), 498-504. https://doi.org/10.1021/acs.nanolett.7b04453

Lattice-matched graphene on hexagonal boron nitride is expected to lead to the formation of a band-gap but requires the formation of highly strained material and has not hitherto been realised. We demonstrate that aligned, lattice-matched graphene ca... Read More about Lattice-Matched Epitaxial Graphene Grown on Boron Nitride.

Terahertz conductivity of the highly mismatched amorphous alloy, GaNBi (2017)
Journal Article
Vaisakh, C., Foxon, C., Novikov, S. V., & Kini, R. (2017). Terahertz conductivity of the highly mismatched amorphous alloy, GaNBi. Semiconductor Science and Technology, 32(12), Article 125009. https://doi.org/10.1088/1361-6641/aa9288

We report terahertz optical conductivity measurements of the highly mismatched alloy, GaNBi. We find that in these amorphous GaNBi epilayers grown using plasma assisted molecular beam epitaxy, the optical conductivity is enhanced in the samples grown... Read More about Terahertz conductivity of the highly mismatched amorphous alloy, GaNBi.

An atomic carbon source for high temperature molecular beam epitaxy of graphene (2017)
Journal Article
Albar, J., Summerfield, A., Cheng, T. S., Davies, A., Smith, E., Khlobystov, A. N., …Novikov, S. V. (in press). An atomic carbon source for high temperature molecular beam epitaxy of graphene. Scientific Reports, 7(1), Article 6598. https://doi.org/10.1038/s41598-017-07021-1

We report the use of a novel atomic carbon source for the molecular beam epitaxy (MBE) of graphene layers on hBN flakes and on sapphire wafers at substrate growth temperatures of ~1400 °C. The source produces a flux of predominantly atomic carbon, wh... Read More about An atomic carbon source for high temperature molecular beam epitaxy of graphene.

Molecular beam epitaxy as a growth technique for achieving free-standing zinc-blende GaN and wurtzite AlxGa1-xN (2017)
Journal Article
Novikov, S. V., Kent, A., & Foxon, C. (2017). Molecular beam epitaxy as a growth technique for achieving free-standing zinc-blende GaN and wurtzite AlxGa1-xN. Progress in Crystal Growth and Characterization of Materials, 63(2), https://doi.org/10.1016/j.pcrysgrow.2017.04.001

Currently there is a high level of interest in the development of ultraviolet (UV) light sources for solid state lighting, optical sensors, surface decontamination and water purification. III-V semiconductor UV LEDs are now successfully manufactured... Read More about Molecular beam epitaxy as a growth technique for achieving free-standing zinc-blende GaN and wurtzite AlxGa1-xN.

Unintentional boron incorporation in AlGaN layers grown by plasma-assisted MBE using highly efficient nitrogen RF plasma-sources (2017)
Journal Article
Novikov, S. V., & Foxon, C. (2017). Unintentional boron incorporation in AlGaN layers grown by plasma-assisted MBE using highly efficient nitrogen RF plasma-sources. Journal of Crystal Growth, 477, 154-158. https://doi.org/10.1016/j.jcrysgro.2017.01.007

Plasma-assisted molecular beam epitaxy (PA-MBE) is now widely used for the growth of group III-nitrides. Many years ago it became clear that during PA-MBE there is unintentional doping of GaN with boron (B) due to decomposition of the pyrolytic boron... Read More about Unintentional boron incorporation in AlGaN layers grown by plasma-assisted MBE using highly efficient nitrogen RF plasma-sources.